X-BAND LOW NOISE Search Results

Medium Power Amplifiers

Contextual Info: TABLE OF CONTENTS CONTENTS INTRODUCTION Corporate Overview AMF Technology Overview AMF AMPLIFIERS Low-Noise Amplifiers Octave Band Multioctave Band Moderate Band Ultra-Broadband Low-Noise SATCOM Amplifiers C-Band Waveguide Input X-Band Waveguide Input Ku-Band Waveguide Input

miteq amf

Abstract: Medium Power Amplifiers x-band power amplifier power amplifiers
Contextual Info: TABLE OF CONTENTS CONTENTS INTRODUCTION Corporate Overview AMF Technology Overview AMF AMPLIFIERS Low-Noise Amplifiers Octave Band Multioctave Band Moderate Band Ultra-Broadband Low-Noise SATCOM Amplifiers C-Band Waveguide Input X-Band Waveguide Input Ku-Band Waveguide Input

B3RX1620

Abstract: X-band amplifier WR90 waveguide switch X-band marine radar
Contextual Info: B3RX1620 X-Band Low Noise Front End TYPICAL OPERATION Operating Conditions DESCRIPTION Operating voltage . . . . Signal frequency . . . . Local Oscillator frequency tuning voltage 4V . . . . tuning voltage 24V . . . The B3RX1620 is a low noise front end for X-band

RF1136

Abstract: RF113 RF327
Contextual Info: RF1136 BROADBAND LOW POWER SP3T SWITCH Package Style: QFN, 12-Pin, 2.5 mm x 2.5 mm x 0.6 mm Features „ „ „ „ „ „ Low Frequency - 3.5 GHz Operations Very Low Insertion Loss: Cell Band 0.25 dB PCS Band 0.30 dB High Isolation: Cell Band 28 dB PCS Band 22 dB

Contextual Info: RF1136 BROADBAND LOW POWER SP3T SWITCH Package Style: QFN, 12-Pin, 2.5 mm x 2.5 mm x 0.6 mm Features       Low Frequency - 3.5 GHz Operations Very Low Insertion Loss: Cell Band 0.25 dB PCS Band 0.30 dB High Isolation: Cell Band 28 dB PCS Band 22 dB

S11 SCHOTTKY diode

Abstract: MA4E2054B-287T MA4E2054-1141T MA4E2054 MA4E2054A-1146T MA4E2054A-287T MA4E2054B MA4E2054E-1068T MA4E2054D-287 Surface Mount RF Schottky Barrier Diodes
Contextual Info: MA4E2054 Series Surface Mount Low Barrier X-Band Schottky Diode Features • • • • • • • • • Package Outlines Low IR <100nA @ 1V, <500nA @ 3V Designed for High Volume, Low Cost Detector and Mixer Applications Low Noise Figure: 5.7 dB (SSB) at X-Band

sot 14L

Abstract: sot-23 ma4
Contextual Info: V an A M P com pany < Surface Mount Low Barrier X-Band Schottky Diodes MA4E2054 Series V3.00 Features • Low IR <100nA @ IV, <500nA @ 3 V • Designed for High Volume, Low Cost Detector and Mixer Applications • Low Noise Figure: 5.7 dB (SSB) at X-Band

MA4E1245KE

Abstract: MA4E1245KA MA4E1245KB 350AT S11 SCHOTTKY diode 20/Molectron Detector J100 MA4E1245 transistor schottky model spice microwave diode
Contextual Info: Surface Mount Low Barrier X-Band Schottky Diodes MA4E1245 Series V3.00 SOT-23 Features ● ● ● ● ● ● ● Designed for High Volume Low Cost Detector and Mixer Applications Low Noise Figure: 5.7 dB SSB at X-Band High Detector Sensitivity: -55 dBm TSS

diode L44

Abstract: Surface Mount RF Schottky Barrier Diodes
Contextual Info: r M a n A M P ic om pany Surface Mount Low Barrier X-Band Schottky Diodes MA4E2054 Series V3.00 Features • Low I R clOOnA @ IV, <500nA @ 3Y • Designed for High Volume, Low Cost Detector and Mixer Applications • Low Noise Figure: 5.7 dB (SSB) at X-Band

ma4e12

Contextual Info: an A M P com pany Surface Mount Low Barrier X-Band Schottky Diodes MA4E1245 Series V3.00 SOT-23 Features • Designed for High Volume Low Cost Detector and Mixer Applications • Low Noise Figure: 5.7 dB SSB at X-Band • High Detector Sensitivity: -55 dBm TSS

Contextual Info: M/A-COM PCS 1900 ULTRA LOW LOSS FULL BAND RECEIVE FILTER Features • • • • Full PCS Rx Band 1850 - 1910 MHz Ultra Low Insertion Loss < 0.4 dB (typical) High Rejection in Tx Band (1930 - 1990 MHz) > 60 dB Small Size - 4.65 x 3.15 x 1.7 Description

WR284* ISOLATOR

Abstract: MS3116E-10-6S WR340 flange dimensions
Contextual Info: Back to Amplifier Home Page AMF SATCOM AMPLIFIERS Introduction S-Band C-Band X-Band Ku-Band Ka-Band 40 – 60 GHz Low Noise Outline Drawings 100 Davids Drive • Hauppauge, NY 11788 • 631-436-7400 • Fax: 631-436-7430 • www.miteq.com TABLE OF CONTENTS

MA4E1245

Abstract: S11 SCHOTTKY diode
Contextual Info: M MôM m an A M P com pany Surface Mount Low Barrier X-Band Schottky Diodes MA4E1245 Series V3.00 SOT-23 Features • D esigned for High Volume Low Cost Detector and Mixer Applications • Low Noise Figure: 5.7 dB SSB at X-Band • High Detector Sensitivity: -55 dBm TSS

Contextual Info: RF1147 BROADBAND LOW POWER SP4T SWITCH Package Style: QFN, 16-pin, 3 mm x 3 mm Features       Low Frequency - 2.5 GHz Operation Very Low Insertion Loss: Cell Band 0.35 dB PCS Band 0.45 dB High Isolation: Cell Band 29 dB PCS Band 22 dB Compatible With Low Voltage

LG diode 831

Abstract: MA4E2054-287T
Contextual Info: Surface Mount Low Barrier X-Band Schottky Diode MA4E2054 Series MA4E2054 Series Surface Mount Low Barrier X-Band Schottky Diodes Package Outlines Features • • • • • • • • • Low IR <100nA @ 1V, <500nA @ 3V Designed for High Volume, Low Cost Detector and Mixer

LNA x-band

Abstract: TGA2600-EPU
Contextual Info: Advance Product Information March 4, 2004 X-band Ultra Low Noise Amplifier TGA2600-EPU Key Features • • • • • • • • Product Description Primary Applications • Radar • X band LNA, ECM The TriQuint TGA2600-EPU is an Ultra Low-Noise Amplifier. This LNA operates

EL36

Abstract: ND5052-3G
Contextual Info: X TO K*BAND GaAs SCHOTTKY BARRIER MIXER DIODE FEATURES OUTLINE DIMENSIONS Untutnmm • X BAND MIXgR DIODE OUTLINE 3 6 • LOW NOISE GaAs SCHOTTKY DIODE NF = 5 dB TYP at I » 10 GHz • LOW TERMINAL CAPACITANCE C i =* 0.3 pF MAX at 1 M Hi • SMALL SIZE • LOW COST

Contextual Info: AMFW SATCOM AMPLIFIER SERIES ULTRA LOW NOISE LIMAs • C-BAIMD • X-BAND • Ku-BAINID

RF1156

Contextual Info: RF1156 BROADBAND MEDIUM POWER SP5T SWITCH Package Style: QFN, 16-pin, 3 mm x 3 mm Features „ „ „ „ „ „ Low Frequency - 2.5 GHz Operation Very Low Insertion Loss: Cell Band 0.35 dB PCS Band 0.60 dB High Isolation: Cell Band 29 dB PCS Band 22 dB Compatible With Low Voltage

SIFAM

Contextual Info: Page 1 of 2 980nm Pump WDMs C-band 1 x 2, 2 x 2 ports, 980/1550 nm operation Features and Benefits • Very low insertion loss • Proven reliability • Enables low noise figure SIFAM’s 980/1550nm WDM allows for combination of pump and signal in C-band 980 nm

FMC2122LN-03

Abstract: k-band amplifier
Contextual Info: FMC2122LN-03 Ku, K-Band Power GaAs Modules FEATURES • • • • • • • High Output Power: P1dB = 12dBm Typ. High Gain: G1dB = 12dB(Typ.) Low In/Out VSWR Low Noise: NF = 3.0dB (Typ.) Broad Band: 21.2 ~ 22.4GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package (12 X 15 X 3.5mm)

FMC1819LN-02

Abstract: Fujitsu Ku microwave
Contextual Info: FMC1819LN-02 Ku, K-Band Power GaAs Modules FEATURES • • • • • • • High Output Power: P1dB = 12dBm Typ. High Gain: G1dB = 13.5dB(Typ.) Low In/Out VSWR Low Noise: NF = 2.5dB (Typ.) Broad Band: 18.7 ~ 19.7GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package (12 X 15 X 3.5mm)

1N831

Abstract: 1N832A "Point Contact Diodes" Silicon Point Contact Mixer Diodes
Contextual Info: Point Contact Diodes Point Contact Diodes: 1N Series X Band Point Contact Mixer Diodes Description This MicroMetrics 1N series of Point Contact Mixer diodes is designed for applications through X-Band. These diodes employ epitaxial silicon optimized for low noise figure and

FMC2223LN-03

Abstract: fujitsu k-band
Contextual Info: FMC2223LN-03 Ku, K-Band Power GaAs Modules FEATURES • • • • • • • High Output Power: P1dB = 12dBm Typ. High Gain: G1dB = 12dB(Typ.) Low In/Out VSWR Low Noise: NF = 3.0dB (Typ.) Broad Band: 22.4 ~ 23.6GHz Impedance Matched Zin/Zout = 50W Hermetically Sealed Package (12 X 15 X 3.5mm)