500W TRANSISTOR
Abstract: hvvi
Text: HVV1011-500L Product Overview L-Band High Power Pulsed Transistor 32us on/18us off x 48, LTDC 6.4% For L-band Radar Applications DESCRIPTION PACKAGE The high power HVV1011-500L device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating
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HVV1011-500L
on/18us
HVV1011-500L
EG-01-PO17X1
500W TRANSISTOR
hvvi
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CHA7010
Abstract: x-Band High Power Amplifier
Text: CHA7010 RoHS COMPLIANT X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP
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CHA7010
CHA7010
DSCHA70104054
x-Band High Power Amplifier
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x-Band High Power Amplifier
Abstract: 10Ghz RF Power 10w amplifier CHA7010
Text: CHA7010 RoHS COMPLIANT X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP
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CHA7010
CHA7010
DSCHA70104054
x-Band High Power Amplifier
10Ghz RF Power 10w amplifier
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AN0020
Abstract: CHA5014 9v23
Text: CHA5014 RoHS COMPLIANT X Band HBT Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5014 chip is a monolithic twostage medium power amplifier designed for X band applications. Moreover this amplifier is relevant for systems that require an output power weakly sensitive to
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CHA5014
CHA5014
30dBm
DSCHA50140112
AN0020
9v23
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x-Band High Power Amplifier
Abstract: CHA7012
Text: CHA7012 X-band HBT High Power Amplifier GaAs Monolithic Microwave IC Description TI Vc The CHA7012 chip is a monolithic twostage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through
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CHA7012
CHA7012
DSCHA70127235
x-Band High Power Amplifier
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CHA5014
Abstract: No abstract text available
Text: CHA5014 RoHS COMPLIANT X Band HBT Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5014 chip is a monolithic twostage medium power amplifier designed for X band applications. Moreover this amplifier is relevant for systems that require an output power weakly sensitive to
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CHA5014
CHA5014
30dBm
DSCHA50149090-31
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CHA7010
Abstract: x-Band High Power Amplifier x band Gaas Power Amplifier 10W
Text: CHA7010 X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through
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CHA7010
CHA7010
DSCHA70102175
-24-June-02
x-Band High Power Amplifier
x band Gaas Power Amplifier 10W
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C0805C225K9RACTU
Abstract: ECJ-1VB1H103K PCC1784CT-ND R04003
Text: HELP3TM Tri-band USCellular/Japan Cellular/IMT UMTS/WCDMA Power Amplifier Module Application Note HELP3TM Tri-band WCDMA Power Amplifier Module Rev 2 Relevant products • AWT6222 General Description This ANADIGICS 3 mm x 5 mm hetero-junction bipolar transistor HBT power amplifier module is designed
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AWT6222
C0805C225K9RACTU
ECJ-1VB1H103K
PCC1784CT-ND
R04003
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CHA5012
Abstract: No abstract text available
Text: CHA5012 X Band Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through
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CHA5012
CHA5012
DSCHA50126286
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99-F
Abstract: CHA5012-99F CHA5012
Text: CHA5012 X Band Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through
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CHA5012
CHA5012
DSCHA50126286
99-F
CHA5012-99F
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CHA5012
Abstract: No abstract text available
Text: CHA5012 X Band Driver Amplifier GaAs Monolithic Microwave IC Description Main Features The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through
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CHA5012
CHA5012
DSCHA50126066
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Untitled
Abstract: No abstract text available
Text: CHA5012 X Band Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including via holes through the substrate and air bridges. A nitride
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CHA5012
CHA5012
DSCHA50120179
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200khz power amplifier
Abstract: DCS1800 GSM900 PCS1900 RF3145 RF3145PCBA-41X
Text: RF3145 RF3145QuadBand GSM/EDGE/G SM850/DCS/ PCS Power Amplifier Module QUAD-BAND GSM/EDGE/GSM850/DCS/PCS POWER AMPLIFIER MODULE NC RoHS Compliant & Pb-Free Product Package Style: Module 10 mm x 10 mm 12 Features Integrated Power Control & Band
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RF3145
RF3145QuadBand
SM850/DCS/
GSM/EDGE/GSM850/DCS/PCS
33dBm
29dBm
GSM850
GSM900
DS050919
200khz power amplifier
DCS1800
PCS1900
RF3145
RF3145PCBA-41X
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94GHz amplifier
Abstract: CHA7012
Text: CHA7012 RoHS COMPLIANT X-band HBT High Power Amplifier GaAs Monolithic Microwave IC Description TI Vc Main Features Frequency band: 9.2 -10.4GHz Output power P3dB : 38.5dBm High linear gain: > 20dB High PAE: > 38% Two biasing modes: -VDigital control thanks to TTL interface
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CHA7012
CHA7012
DSCHA70129082-
94GHz amplifier
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S1502
Abstract: SKY65152-11 sky65152
Text: DATA SHEET SKY65152-11: 2.4-2.5 GHz WLAN Power Amplifier Applications Description x IEEE 802.11 b/g WLANs x ISM band transmitters x WCS fixed wireless x Wireless access nodes The SKY65152-11 is a Microwave Monolithic Integrated Circuit MMIC Power Amplifier (PA) with superior output power, linearity,
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SKY65152-11:
SKY65152-11
200968F
S1502
sky65152
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4419B
Abstract: C0805C225K9RACTU ECJ-1VB1H103K PCC1784CT-ND R04003 63Sn37Pb Sonoscan
Text: HELP3TM Dual-band Cellular/PCS WCDMA Power Amplifier Module Application Note HELP3TM Dual-band WCDMA Power Amplifier Module Rev 3 Relevant products • AWT6221 General Description This ANADIGICS 3 mm x 5 mm hetero-junction bipolar provide optimum performance in a 50 Ω system, and
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AWT6221
4419B
C0805C225K9RACTU
ECJ-1VB1H103K
PCC1784CT-ND
R04003
63Sn37Pb
Sonoscan
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D 400 F 6 F BIPOLAR TRANSISTOR
Abstract: 41000W TACAN ASI10574 AVF400
Text: AVF400 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2NL FLG The ASI AVF400 is a NPN bipolar power transistor designed for high peak power applications such as DME/TACAN/IFF. In 1025-1150 MHz band. A .0 2 5 x 4 5 ° 4 x .0 6 2 x 4 5 ° 2X B
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AVF400
AVF400
ASI10574
D 400 F 6 F BIPOLAR TRANSISTOR
41000W
TACAN
ASI10574
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DCS1800
Abstract: ECM009 EGSM900 PCS1900 GSM module circuit diagram GSM module BLOCK diagram GSM/BA5 Amplifier
Text: PRELIMINARY DATA SHEET ECM009 3V TRI-BAND GSM POWER AMPLIFIER MODULE Applications Features 3.5V Single Supply Operation 50 Ohms internally matched for input and output High Efficiency EGSM=52%, DCS= 47% 8-pin, 6 X 6mm LGA, surface mounted module On Board band select and output power control
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ECM009
EGSM900
DCS1800
PCS1900
ECM009
900MHz,
75GHz,
PCS1900
GSM module circuit diagram
GSM module BLOCK diagram
GSM/BA5 Amplifier
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mesfet lnb
Abstract: NE72118 NE72118-T1 NE72118-T2 13000 transistor
Text: PRELIMINARY DATA SHEET C TO X BAND AMPLIFIER C TO X BAND OSC N-CHANNEL GaAs MESFET FEATURES NE72118 PACKAGE DIMENSIONS Units in mm • HIGH POWER GAIN: Gs = 5.5 dB TYP at f = 12 GHz • GATE LENGTH: Lg = 0.8 µm (recessed gate) 2.1 ± 0.2 • GATE WIDTH: Wg = 330 µm
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NE72118
NE72118
24-Hour
mesfet lnb
NE72118-T1
NE72118-T2
13000 transistor
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Untitled
Abstract: No abstract text available
Text: CHA7012 RoHS COMPLIANT X-band HBT High Power Amplifier GaAs Monolithic Microwave IC Description TI Vc Main Features 1 1 1 1 1 1 Frequency band: 9.2 -10.4GHz Output power P3dB : 38.5dBm High linear gain: > 20dB High PAE: > 38% Two biasing modes: -VDigital control thanks to TTL interface
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CHA7012
CHA7012
DSCHA70129082-
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VA-PC 10
Abstract: DCS1800 ECM009 EGSM900 PCS1900 EIC 70
Text: PRELIMINARY DATA SHEET ECM009 3V TRI-BAND GSM POWER AMPLIFIER MODULE Applications Features 3.5V Single Supply Operation 50 Ohms internally matched for input and output High Efficiency EGSM=52%, DCS= 47% 8-pin, 6 X 6mm LGA, surface mounted module On Board band select and output power control
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ECM009
EGSM900
DCS1800
PCS1900
ECM009
88GHz,
SS-000423-000
VA-PC 10
PCS1900
EIC 70
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MSC81035M
Abstract: TACAN TACAN 41
Text: MSC81035M NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MSC81035M is a common base device, medium power Class C transistor for pulsed L-Band avionics, DME/TACAN Applications. PACKAGE STYLE .250 2L FLG B A .100 X 45° ØD .088 x 45° CHAMFER C B FEATURES:
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MSC81035M
MSC81035M
TACAN
TACAN 41
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TRANSISTOR 5804
Abstract: A 3120 2SC2798
Text: MITSUBISHI RF POWER TRANSISTOR 0ni7fc,24 b32 2SC2798 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2S C 2798 is a silicon NPN epitaxial planar type transistor designed fo r R F broad-band power amplifiers in U H F band. Dim ensions in mm C 1 .5 M A X
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0D17h24
2SC2798
770MHz,
175MHz,
TRANSISTOR 5804
A 3120
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RF POWER TRANSISTOR NPN
Abstract: 2SC2627 2sc262 mitsubishi vcb sma 9s1 8-32UNC-3A
Text: MITSUBISHI RF POWER TRANSISTOR 2SC2627 NPN EP ITA X IA L PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2SC2627 is a silicon NPN epitaxial planar type transistor designed fo r RF power amplifiers in VHF band mobile radio applications. Dimensions in mm C 1 .5 M A X
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2SC2627
175MHz
175MHz,
175MHz
2SC2627
175MH2
RF POWER TRANSISTOR NPN
2sc262
mitsubishi vcb
sma 9s1
8-32UNC-3A
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