X-BAND POWER TRANSISTOR Search Results

500W TRANSISTOR

Abstract: hvvi
Contextual Info: HVV1011-500L Product Overview L-Band High Power Pulsed Transistor 32us on/18us off x 48, LTDC 6.4% For L-band Radar Applications DESCRIPTION PACKAGE The high power HVV1011-500L device is a high voltage silicon enhancement mode RF transistor designed for L-band pulsed applications operating

CHA7010

Abstract: x-Band High Power Amplifier
Contextual Info: CHA7010 RoHS COMPLIANT X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP

x-Band High Power Amplifier

Abstract: 10Ghz RF Power 10w amplifier CHA7010
Contextual Info: CHA7010 RoHS COMPLIANT X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP

AN0020

Abstract: CHA5014 9v23
Contextual Info: CHA5014 RoHS COMPLIANT X Band HBT Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5014 chip is a monolithic twostage medium power amplifier designed for X band applications. Moreover this amplifier is relevant for systems that require an output power weakly sensitive to

x-Band High Power Amplifier

Abstract: CHA7012
Contextual Info: CHA7012 X-band HBT High Power Amplifier GaAs Monolithic Microwave IC Description TI Vc The CHA7012 chip is a monolithic twostage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through

CHA5014

Contextual Info: CHA5014 RoHS COMPLIANT X Band HBT Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5014 chip is a monolithic twostage medium power amplifier designed for X band applications. Moreover this amplifier is relevant for systems that require an output power weakly sensitive to

Contextual Info: CHA5014-99F RoHS COMPLIANT X Band HBT Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5014 chip is a monolithic twostage medium power amplifier designed for X band applications. Moreover this amplifier is relevant for systems that require an output power weakly sensitive to

x-Band High Power Amplifier

Abstract: 6 ghz amplifier 10w United Monolithic Semiconductors x-band power transistor 4GHz RF power transistors with s-parameters CHA7010
Contextual Info: CHA7010 X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two-stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through

CHA7010

Abstract: x-Band High Power Amplifier x band Gaas Power Amplifier 10W
Contextual Info: CHA7010 X-band GaInP HBT High Power Amplifier GaAs Monolithic Microwave IC Main Features Description The CHA7010 is a monolithic two stage GaAs high power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through

C0805C225K9RACTU

Abstract: ECJ-1VB1H103K PCC1784CT-ND R04003
Contextual Info: HELP3TM Tri-band USCellular/Japan Cellular/IMT UMTS/WCDMA Power Amplifier Module Application Note HELP3TM Tri-band WCDMA Power Amplifier Module Rev 2 Relevant products • AWT6222 General Description This ANADIGICS 3 mm x 5 mm hetero-junction bipolar transistor HBT power amplifier module is designed

CHA5012

Contextual Info: CHA5012 X Band Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through

99-F

Abstract: CHA5012-99F CHA5012
Contextual Info: CHA5012 X Band Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through

CHA5012

Contextual Info: CHA5012 X Band Driver Amplifier GaAs Monolithic Microwave IC Description Main Features The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including, via holes through

Contextual Info: CHA5012 X Band Driver Amplifier GaAs Monolithic Microwave IC Description The CHA5012 chip is a monolithic twostage medium power amplifier designed for X band applications. This device is manufactured using a GaInP HBT process, including via holes through the substrate and air bridges. A nitride

200khz power amplifier

Abstract: DCS1800 GSM900 PCS1900 RF3145 RF3145PCBA-41X
Contextual Info: RF3145 RF3145QuadBand GSM/EDGE/G SM850/DCS/ PCS Power Amplifier Module QUAD-BAND GSM/EDGE/GSM850/DCS/PCS POWER AMPLIFIER MODULE NC RoHS Compliant & Pb-Free Product Package Style: Module 10 mm x 10 mm 12 Features „ „ „ „ „ Integrated Power Control & Band

94GHz amplifier

Abstract: CHA7012
Contextual Info: CHA7012 RoHS COMPLIANT X-band HBT High Power Amplifier GaAs Monolithic Microwave IC Description TI Vc Main Features Frequency band: 9.2 -10.4GHz Output power P3dB : 38.5dBm High linear gain: > 20dB High PAE: > 38% Two biasing modes: -VDigital control thanks to TTL interface

TRANSISTOR 5804

Abstract: A 3120 2SC2798
Contextual Info: MITSUBISHI RF POWER TRANSISTOR 0ni7fc,24 b32 2SC2798 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION OUTLINE DRAWING 2S C 2798 is a silicon NPN epitaxial planar type transistor designed fo r R F broad-band power amplifiers in U H F band. Dim ensions in mm C 1 .5 M A X

RFMD 7325

Contextual Info: DRAFT RF3145 DRAFT RF3145QuadBand GSM/EDGE/G SM850/DCS/ PCS Power Amplifier Module QUAD-BAND GSM/EDGE/GSM850/DCS/PCS POWER AMPLIFIER MODULE NC RoHS Compliant & Pb-Free Product Package Style: Module 10 mm x 10 mm 12 Features „ „ „ „ „ Integrated Power Control & Band

S1502

Abstract: SKY65152-11 sky65152
Contextual Info: DATA SHEET SKY65152-11: 2.4-2.5 GHz WLAN Power Amplifier Applications Description x IEEE 802.11 b/g WLANs x ISM band transmitters x WCS fixed wireless x Wireless access nodes The SKY65152-11 is a Microwave Monolithic Integrated Circuit MMIC Power Amplifier (PA) with superior output power, linearity,

4419B

Abstract: C0805C225K9RACTU ECJ-1VB1H103K PCC1784CT-ND R04003 63Sn37Pb Sonoscan
Contextual Info: HELP3TM Dual-band Cellular/PCS WCDMA Power Amplifier Module Application Note HELP3TM Dual-band WCDMA Power Amplifier Module Rev 3 Relevant products • AWT6221 General Description This ANADIGICS 3 mm x 5 mm hetero-junction bipolar provide optimum performance in a 50 Ω system, and

D 400 F 6 F BIPOLAR TRANSISTOR

Abstract: 41000W TACAN ASI10574 AVF400
Contextual Info: AVF400 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2NL FLG The ASI AVF400 is a NPN bipolar power transistor designed for high peak power applications such as DME/TACAN/IFF. In 1025-1150 MHz band. A .0 2 5 x 4 5 ° 4 x .0 6 2 x 4 5 ° 2X B

DCS1800

Abstract: ECM009 EGSM900 PCS1900 GSM module circuit diagram GSM module BLOCK diagram GSM/BA5 Amplifier
Contextual Info: PRELIMINARY DATA SHEET ECM009 3V TRI-BAND GSM POWER AMPLIFIER MODULE Applications Features 3.5V Single Supply Operation 50 Ohms internally matched for input and output High Efficiency EGSM=52%, DCS= 47% 8-pin, 6 X 6mm LGA, surface mounted module On Board band select and output power control

marking code b38 SMD

Abstract: ACPM-5038 B38 SMD Transistor a5038 ACPM-5038-TR1 TRANSISTOR SMD MARKING CODE B38 AVAGO PA LTE D 5038 transistor
Contextual Info: ACPM-5038 LTE xGP+Band38 2545-2620 MHz 3 x 3 mm Power Amplifier Module Data Sheet Description Features The ACPM-5038 is a fully matched 10-pin surface mount module developed for LTE Band 38 and covers xGP band as well. This power amplifier module operates in

mesfet lnb

Abstract: NE72118 NE72118-T1 NE72118-T2 13000 transistor
Contextual Info: PRELIMINARY DATA SHEET C TO X BAND AMPLIFIER C TO X BAND OSC N-CHANNEL GaAs MESFET FEATURES NE72118 PACKAGE DIMENSIONS Units in mm • HIGH POWER GAIN: Gs = 5.5 dB TYP at f = 12 GHz • GATE LENGTH: Lg = 0.8 µm (recessed gate) 2.1 ± 0.2 • GATE WIDTH: Wg = 330 µm