X0002 Search Results

TE28F640J3C-120

Abstract: TE28F128J3C-120 INTEL 28F320J3 28F128J3 28F256K18 TE28F320J3C110 28F320J3 RC28F640J3C-120 28F640J3 28F640J3 reliability
Contextual Info: 3 Volt Intel StrataFlash Memory 28F128J3, 28F640J3, 28F320J3 x8/x16 Datasheet Product Features • ■ ■ Performance — 110/115/120/150 ns Initial Access Speed — 25 ns Asynchronous Page-Mode Reads — 32-Byte Write Buffer —6.8 µs per Byte Effective

phase controller L120

Abstract: 1N914 28F008SA LH28F004SCB-L12 LHF04C10
Contextual Info: SHARP LHF04C10 CONTENTS PA G E PA G E 1.0 IN TRO D U CTIO N . 3 5.0 D ESIG N C O N S ID E R A T IO N S . 23 1.1 New Features. 3

Contextual Info: PRELIMINARY 5 VOLT FlashFile MEMORY 28F160S5 and 28F320S5 x8/x16 Two 32-Byte Write Buffers — 2 \is per Byte Effective Programming Time Operating Voltage 5 V Vcc — — 5 V V pp 70 ns Read Access Time (16 Mbit) 90 ns Read Access Time (32 Mbit) High-Density Symmetrically-Blocked

Contextual Info: PRODUCT PREVIEW int ! VALUE SERIES 200 FLASH MEMORY CARD 8 - 6 4 MEGABYTES ¡MC008FLSG, ¡MC016FLSG, ¡MC024FLSG ¡MC032FLSG, ¡MC048FLSG, ¡MC064FLSG Low-Cost Linear Flash Card — Intel StrataFlash Memory Technology Automated Write and Erase Algorithms

D8279

Abstract: M30840MCT M3084
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

28F640J3

Abstract: E28F640J3A-120 INTEL 28F320J3 TSOP 66 Package 28F128K3 28F256K3 TE28F640J3C-120 28F128J3 28F160S3 RC28F128J3C-150
Contextual Info: 3 Volt Intel StrataFlash Memory 28F128J3, 28F640J3, 28F320J3 x8/x16 Datasheet Product Features • ■ ■ Performance — 110/115/120/150 ns Initial Access Speed — 25 ns Asynchronous Page-Mode Reads — 32-Byte Write Buffer —6.8 µs per Byte Effective

Micron Q-Flash memory

Abstract: FW501 Micron data sheet Q-Flash sample code read and write flash memory FW201 FW207 MT28F128J3 MT28F128J3FS-15 MT28F320J3 MT28F320J3FS-11
Contextual Info: 128Mb, 64Mb, 32Mb Q-FLASH MEMORY MT28F128J3‡, MT28F640J3, MT28F320J3‡ Q-FLASHTM MEMORY FEATURES 56-Pin TSOP Type I • x8/x16 organization • One hundred twenty-eight 128KB erase blocks 128Mb Sixty-four 128KB erase blocks (64Mb) Thirty-two 128KB erase blocks (32Mb)

21-pin* 4 digits

Abstract: Applications Note U-96 program motor control with ccs software specification Note U-96 x0102 DRC3114 AM32C STPS 20
Contextual Info: REJ09B0271-0100 M32C/80 Group 16/32 Hardware Manual RENESAS 16/32-BIT SINGLE-CHIP MICROCOMPUTER M16C FAMILY / M32C/80 SERIES Before using this material, please visit our website to verify that this is the most current document available. Rev. 1.00 Revision Date: Nov. 01, 2005

STR W 5453 A

Abstract: STR W 5453 AX07CF192 AX07CF192-100 I6I15 ARM processor based Circuit Diagram splitter circuit
Contextual Info: AX07CF192 32-Bit Embedded Flash MCU User’s Manual Preliminary Aeroflex Microelectronic Solutions 4350 Centennial Blvd. Colo. Spgs., CO 80907 www.aeroflex.com January, 2003 Aeroflex Microelectronic Solutions Sales Offices Main Office 4350 Centennial Blvd.

tc 106-10

Abstract: smd transistor w J 3 58 bts 425 l1 transistor SMD p02 smd diode p126 P56. smd 013A1 B15 diode smd diode DB 3 C F2N SMD
Contextual Info: REJ09B0034-0131 16/32 M32C/83 Group M32C/83, M32C/83T Hardware Manual RENESAS 16/32-BIT SINGLE-CHIP MICROCOMPUTER M16C FAMILY / M32C/80 SERIES Before using this material, please visit our website to verify that this is the most current document available.

Contextual Info: LH28F008SC-T/SCH-T, LH28F008SC-TL/SCH-TL LH28F008SC-T/SCH-T LH28F008SC-TL/SCH-TL 8 M-bit 1 MB x 8 Smart 3 Flash Memories DESCRIPTION The LH28F008SC-T/SCH-T/SC-TL/SCH-TL flash memories with Smart 3 technology are high-density, low-cost, nonvolatile, read/write storage solution for a

SA612

Abstract: LCC-40P-M02 MBM29LV002B
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS05-20827-3E FLASH MEMORY CMOS 2M 256K x 8 BIT MBM29LV002T-10/-12/MBM29LV002B-10/-12 • FEATURES • Single 3.0 V read, program, and erase Minimizes system level power requirements • Compatible with JEDEC-standard commands

28F008SA

Abstract: E0000 LH28F008SCR-L85 LHF08CH2
Contextual Info: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F008SCR-L85 Flash Memory 8M 1MB x 8 (Model No.: LHF08CH2) Spec No.: EL104029B Issue Date: February 1, 1999 sharp LHF08CH2 ●Handle this document carefully for it contains material protected by international

28F008SA

Abstract: LH28F016SCR-L95
Contextual Info: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F016SCR-L95 Flash Memory 16M 2MB x 8 (Model No.: LHF16C18) Spec No.: EL104171 Issue Date: September 30, 1998 sharp LHF16C18 ●Handle this document carefully for it contains material protected by international

29058

Contextual Info: 3/5 VOLT SERIES 100 FLASH MEMORY MINIATURE CARD ÌFM002A, ÌFM004A, ÌFM008A • Low-Cost Linear Flash Card ■ Miniature Card Specification Compliant ■ Single Supply SmartVoltage Operation — 5 V or 3.3 V Read/Write ■ Fast Read Performance — 100 ns Max Access Time at 5 V

"NOR Flash" intel 28f

Abstract: 29060
Contextual Info: PRELIMINARY intei 5 VOLT INTEL StrataFlash MEMORY 28F320J5 and 28F640J5 x8/x16 High-Density Symmetrically-Blocked Architecture — 64 128-Kbyte Erase Blocks (64 M) — 32 128-Kbyte Erase Blocks (32 M) Cross-Compatible Command Support — Intel Basic Command Set

F1H16

Abstract: 29060
Contextual Info: PRODUCT PREVIEW INTEL StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT 28F320J5 and 28F640J5 High-Density Symmetrically-Blocked Architecture — 64 128-Kbyte Erase Blocks 64 M — 32 128-Kbyte Erase Blocks (32 M) Cross-Compatible Command Support — Intel Basic Command Set

block diagram automatic college bell

Abstract: 29059 B686 AP-625
Contextual Info: PRODUCT PREVIEW 28F016SC/28F016SC-L 16-MBIT 2 MB x 8 SmartVoltage FlashFile MEMORY SmartVoltage Technology — 2.7V Vcc (28F016SC-L Read-only) — 3.3V or 5V Vcc High-Density Symmetrically-Blocked Architecture — Thirty-two 64-Kbyte Erasable Blocks — 3.3V, 5V, o r1 2 V V p p

5 PEN PC TECHNOLOGY free

Contextual Info: ADVANCE INFORMATION INTEL StrataFlash MEMORY TECHNOLOGY 32 AND 64 MBIT 28F320J5 a n d 28F640J5 High-Density Sym m etrically-Blocked A rchitecture — 64 128-Kbyte Erase Blocks 64 M — 32 128-Kbyte Erase Blocks (32 M) Cross-Com patible Command Support

Contextual Info: TM SPANSION Flash Memory Data Sheet September 2003 TM This document specifies SPANSION memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification,

28F008SA

Abstract: E0000 LH28F008SCN-L85
Contextual Info: PRODUCT SPECIFICATIONS Integrated Circuits Group LH28F008SCN-L85 Flash Memory 8M 1MB x 8 (Model No.: LHF08CH9) Spec No.: EL10Z17 Issue Date: December 2, 1998 sharp LHF08CH9 ●Handle this document carefully for it contains material protected by international

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-20870-5E FLASH MEMORY CMOS 8M 1M x 8 BIT MBM29LV080A-70/90/12 • DESCRIPTION The MBM29LV080A is a 16 M-bit, 3.0 V-only Flash memory organized as 1 M bytes of 8 bits each. The 1 M bytes of data is divided into 32 sectors of 64 K bytes of flexible erase capability. The 8 bits of data will appear on

Intel StrataFlash Memory j3

Abstract: 28F256J3 E28F640J3A-120 BGA 28F320J3 PC28F640J3 TE28F640J3C-115 vf bga INTEL 28F320J3 RC28F128J3C-150 PC28F128J3C120
Contextual Info: Intel StrataFlash Memory J3 28F256J3, 28F128J3, 28F640J3, 28F320J3 (x8/x16) Datasheet Product Features • ■ ■ Performance — 110/115/120/150 ns Initial Access Speed — 125 ns Initial Access Speed (256 Mbit density only) — 25 ns Asynchronous Page mode Reads

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid