X3272 Search Results

GaAs tunnel diode

Abstract: tunnel diode GaAs MIL-PRF-19500 zener diode 19500/435 germanium diode Book Microelectronic Germanium diode data sheet Gallium Arsenide tunnel diode zener diode reliability fit Germanium Power Diodes
Contextual Info: FOR IMMEDIATE RELEASE: October 23, 2009 CONTACT: Aeroflex Microelectronic Solutions Teresa Farris MARCOM Manager 719-594-8035 Teresa.farris@aeroflex.com www.aeroflex.com/metelics-HiRelComponents Aeroflex / Metelics Pete Ciccarelli Product Sales Manager 603-641-3800 x3272

GaAs tunnel diode

Abstract: DATASHEET TUNNEL DIODE tunnel diode GaAs Gallium Arsenide tunnel diode AEROFLEX germanium diode 1N6638 1N6639 1N6640 1N6641
Contextual Info: FOR IMMEDIATE RELEASE: April 16, 2010 CONTACT: Aeroflex Microelectronic Solutions Teresa Farris MARCOM Manager 719-594-8035 Teresa.farris@aeroflex.com www.aeroflex.com/metelics-hirelcomponents Aeroflex / Metelics Pete Ciccarelli Product Sales Manager 603-641-3800 x3272

1n41481 zener diode

Abstract: GaAs tunnel diode 1n4148 zener diode DATASHEET TUNNEL DIODE tunnel diode GaAs AEROFLEX 1N4148 diode download datasheet 1N914 diode data sheet free download germanium diode Germanium diode data sheet
Contextual Info: FOR IMMEDIATE RELEASE: January 18, 2010 CONTACT: Aeroflex Microelectronic Solutions Teresa Farris MARCOM Manager 719-594-8035 Teresa.farris@aeroflex.com Aeroflex / Metelics Pete Ciccarelli Product Sales Manager 603-641-3800 x3272 peter.ciccarelli@aeroflex.com

GS8640Z36GT

Abstract: GS8640Z18T-250 GS8640Z18T-300 GS8640Z18T GS8640Z18T-167 GS8640Z18T-200
Contextual Info: Product Preview GS8640Z18/36T-300/250/200/167 100-Pin TQFP Commercial Temp Industrial Temp 300 MHz–167 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 72Mb Pipelined and Flow Through Synchronous NBT SRAM Features Because it is a synchronous device, address, data inputs, and

Contextual Info: Preliminary GS8162Z72CC-333/300/250/200/150 209-Bump BGA Commercial Temp Industrial Temp 18Mb Pipelined and Flow Through Synchronous NBT SRAM Features • NBT No Bus Turn Around functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with

Contextual Info: GS88237CB-xxx 119-Bump BGA Commercial Temp 333 MHz–200 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 256K x 36 9Mb SCD/DCD Sync Burst SRAM Features • Single/Dual Cycle Deselect selectable • IEEE 1149.1 JTAG-compatible Boundary Scan • ZQ mode pin for user-selectable high/low output drive

Contextual Info: GS88237CB-xxxIV 119-Bump BGA Industrial Temp 256K x 36 9Mb SCD/DCD Sync Burst SRAM Features • Single/Dual Cycle Deselect selectable • IEEE 1149.1 JTAG-compatible Boundary Scan • ZQ mode pin for user-selectable high/low output drive • 1.8 V or 2.5 V core power supply

Contextual Info: Preliminary GS88237CB-333/300/250/200 119-Bump BGA Commercial Temp Industrial Temp 256K x 36 9Mb SCD/DCD Sync Burst SRAM Features • Single/Dual Cycle Deselect selectable • IEEE 1149.1 JTAG-compatible Boundary Scan • ZQ mode pin for user-selectable high/low output drive

Contextual Info: GS88218/36CB/D-333/300/250/200/150 119- and 165-Bump BGA Commercial Temp Industrial Temp 333 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation

GS882Z18CGB-200IV

Abstract: jtag bsdl cypress
Contextual Info: GS882Z18/36C B/D -xxxIV 9Mb Pipelined and Flow Through Synchronous NBT SRAM 119-bump and 165-bump BGA Industrial Temp Features • NBT (No Bus Turn Around) functionality allows zero wait Read-Write-Read bus utilization; fully pin-compatible with both pipelined and flow through NtRAM , NoBL™ and

Contextual Info: GS88237CB-xxxV 119-Bump BGA Commercial Temp Industrial Temp 256K x 36 9Mb SCD/DCD Sync Burst SRAM Features • Single/Dual Cycle Deselect selectable • IEEE 1149.1 JTAG-compatible Boundary Scan • ZQ mode pin for user-selectable high/low output drive • 1.8 V or 2.5 V core power supply

Contextual Info: GS88237BB/D-333/300/250/200 119- & 165-Bump BGA Commercial Temp Industrial Temp 256K x 36 9Mb SCD/DCD Sync Burst SRAM Features 333 MHz–200 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O SCD and DCD Pipelined Reads The GS88237BB/D is a SCD Single Cycle Deselect and

Contextual Info: GS88218/36CB/D-xxxI 119- and 165-Bump BGA Industrial Temp 333 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Single/Dual Cycle Deselect selectable

Contextual Info: GS8320E18/32/36T-250/225/200/166/150/133 250 MHz–133 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 2M x 18, 1M x 32, 1M x 36 36Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features Functional Description ct Flow Through/Pipeline Reads The function of the Data Output register can be controlled by

GS88237BB-200

Abstract: GS88237B GS88237BB GS88237BB-250 GS88237BB-300 GS88237BB-333 GS88237BB-333I GS88237BB-250I x327
Contextual Info: GS88237BB-333/300/250/200 119-Bump BGA Commercial Temp Industrial Temp 256K x 36 9Mb SCD/DCD Sync Burst SRAM Features 333 MHz–200 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O SCD and DCD Pipelined Reads The GS88237BB is a SCD Single Cycle Deselect and DCD

GS881E18B

Abstract: GS881E18BT-333 GS881E32B GS881E36B
Contextual Info: GS881E18B T/D /GS881E32B(T/D)/GS881E36B(T/D) 100-Pin TQFP & 165-bump BGA Commercial Temp Industrial Temp 250 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 512K x 18, 256K x 32, 256K x 36 9Mb Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline

Contextual Info: GS88218/36CB/D-xxx 119- and 165-Bump BGA Commercial Temp 333 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs Features • FT pin for user-configurable flow through or pipeline operation • Single/Dual Cycle Deselect selectable

Contextual Info: GS88237CB-xxxV 119-Bump BGA Commercial Temp 256K x 36 9Mb SCD/DCD Sync Burst SRAM Features • Single/Dual Cycle Deselect selectable • IEEE 1149.1 JTAG-compatible Boundary Scan • ZQ mode pin for user-selectable high/low output drive • 1.8 V or 2.5 V core power supply

Contextual Info: GS88237CB-xxxV 119-Bump BGA Commercial Temp 256K x 36 9Mb SCD/DCD Sync Burst SRAM Features • Single/Dual Cycle Deselect selectable • IEEE 1149.1 JTAG-compatible Boundary Scan • ZQ mode pin for user-selectable high/low output drive • 1.8 V or 2.5 V core power supply

GS864036T-250

Abstract: GS864036 GS864018 GS864018T-167 GS864018T-200 GS864018T-250 GS864018T-300 GS864032
Contextual Info: Product Preview GS864018/32/36T-300/250/200/167 300 MHz–167 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 4M x 18, 2M x 32, 2M x 36 72Mb Sync Burst SRAMs 100-Pin TQFP Commercial Temp Industrial Temp Features • FT pin for user-configurable flow through or pipeline

Contextual Info: GS88218/36CB/D-333/300/250/200/150 119- and 165-Bump BGA Commercial Temp Industrial Temp Features • • • • • • • • • • • • • • • 333 MHz–150 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 512K x 18, 256K x 36 9Mb SCD/DCD Sync Burst SRAMs

XAPP 017

Abstract: X5258 XC4000 XC4000A X5262 X5259
Contextual Info: Improving XC4000 Design Performance  XAPP 043.000 Application Note BY NICK CAMILLERI AND CHRIS LOCKHARD Summary This Application Note describes XC4000 architectural features that can be exploited in high-performance designs, and software techniques that improve placement, routing and timing. It also contains information

GS8160F18B

Abstract: GS8160F32B GS8160F36B GS8160F36BGT
Contextual Info: GS8160F18/32/36BT-5.5/6.5/7.5 100-Pin TQFP Commercial Temp Industrial Temp 5.5 ns–8.5 ns 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 1M x 18, 512K x 32, 512K x 36 18Mb Sync Burst SRAMs Features • Flow Through mode operation; Pin 14 = No Connect • 2.5 V or 3.3 V +10%/–10% core power supply

Contextual Info: GS88237BB-333/300/250/200 333 MHz–200 MHz 2.5 V or 3.3 V VDD 2.5 V or 3.3 V I/O 256K x 36 9Mb SCD/DCD Sync Burst SRAM n es ig fo Functional Description FLXDrive The ZQ pin allows selection between high drive strength ZQ low for multi-drop bus applications and normal drive strength