400-MIPS
Abstract: xcore bluetooth usb adapter block diagram 400MIPS Xmos
Text: XK-1 Development Kit Product Brief DISCOVER EVENT DRIVEN PROCESSORS The XK-1 Development Kit provides a simple and cost effective way of trying out your design ideas on the XS1-L1 event-driven processor. The kit includes the XK-1 board featuring the low-power
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TQ128
400-MIPS
xcore
bluetooth usb adapter block diagram
400MIPS
Xmos
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IDC connector 20way plug
Abstract: No abstract text available
Text: XK-1A Development Board Quick Start Guide Document Revision 1.1 Publication Date: 2011/03/29 Copyright 2010 XMOS Limited, All Rights Reserved. XK-1A Development Board Quick Start Guide 1 2/4 Introduction The XK-1A is a low cost development board intended for exploring event-driven
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128KBytes
IDC connector 20way plug
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QXK2E104KTPTZH
Abstract: F931A107MNC 5,2 uf smd F930J107MBA smd 67 SMD CAPACITORS 10-5 F931A475MAA f931c475maa F931V105MAA F931A106KBA
Text: 1819-2012.qxp:QuarkCatalogTempNew 9/11/12 12:53 PM Page 1819 21 Plastic Film and Tantalum Capacitors RoHS Tantalum Electrolytic Capacitors — F93 Series, +85°C RoHS TEST & MEASUREMENT Metallized Polyester Film Capacitors — XK Series INTERCONNECT Cap. µF
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2002/95/EC)
QXK2E104KTPTZH
F931A107MNC
5,2 uf smd
F930J107MBA
smd 67
SMD CAPACITORS 10-5
F931A475MAA
f931c475maa
F931V105MAA
F931A106KBA
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Untitled
Abstract: No abstract text available
Text: PLASTIC FILM CAPACITORS XK- ZH Metallized Polyester Film Capacitor series (Extended Standard Type) Highly reliable and superior performance in high frequency applications, self-healing and non-inductive construction, using a dielectric made of polyethylene terephthalate film
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250VAC
25MIN
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Untitled
Abstract: No abstract text available
Text: 1.5V Drive Nch MOSFET RUF020N02 Structure Silicon N-channel MOSFET Dimensions Unit : mm 0.2Max. TUMT3 Features 1) Low On-resistance. 2) Space saving, small surface mount Package (TUMT3). 3) Low voltage drive (1.5V drive). (1) Gate (2) Source Abbreviated symbol : XK
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RUF020N02
R0039A
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RUF020N02
Abstract: No abstract text available
Text: 1.5V Drive Nch MOSFET RUF020N02 zDimensions Unit : mm zStructure Silicon N-channel MOSFET 0.2Max. TUMT3 zFeatures 1) Low On-resistance. 2) Space saving, small surface mount Package (TUMT3). 3) Low voltage drive (1.5V drive). (1) Gate (2) Source Abbreviated symbol : XK
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RUF020N02
R0039A
RUF020N02
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Untitled
Abstract: No abstract text available
Text: 200W-600W slimline Power supply User Configurable 1U size Series PLUG & PLAY POWER next generation power solution FEAtUREs & OPtIOns the XK family of low acoustic noise power supplies provides up to 600W in a slimline 1U x 260mm x 89mm package. Providing up to 8 isolated outputs, the
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00W-600W
260mm
00-600W
XVD234580-D4A
V/40A,
2V/20A,
4V/10A,
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Untitled
Abstract: No abstract text available
Text: Dual Band X & Ku SSPA X 125W to 180W Ku 125W to 160W SSPA-XK Features • Dual-band, linearity and efficiency High gain Microprocessor based monitor and control Monitoring of all key operating parameters Built-in forward and reflected power monitors
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RS232
RS422/485
PB-SSPA-XK-13150
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Xingke Professional Li-ion Battery
Abstract: DW01
Text: File No.： Xingke Professional Li-ion Battery Co.,ltd.Ver: Date： WI/JS-SPE-PCM-2-001 A/0 2011-8-24 Polymer Lithium Ion Battery Specifications Model: XK-605068*3P PACK Draft Checked Approval Tel：+86-755-84715111 Fax：+86-755-84715777 Postcode：518129
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WI/JS-SPE-PCM-2-001
XK-605068
Xingke Professional Li-ion Battery
DW01
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MIL-R-55182
Abstract: No abstract text available
Text: RNRIRNN MIL STYLE . L — | - - _ Established Reliability Resistors Hermetic Seal MIL-R-55182 ±0.1%, 0.5% and 1% Tolerance Characteristics E (±25PPM) and C(±50PPM) Vio, Vs, xk Watt (125°C)
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MIL-R-55182)
25PPM)
50PPM)
MIL-R-55182.
MIL-R-55182
25PPM/Â
50PPM/Â
1/10W
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SE521F
Abstract: No abstract text available
Text: Product specification Philips Semiconductors Linear Products High-speed dual-differential comparator/sense amp NE/SE521 PIN CONFIGURATION FEATURES • 12ns maximum guaranteed propagation delay D, F, N Packages • 20\xk maximum input bias current I N P U T 1A |~î~
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NE/SE521
20\xk
10MHz
SE521F
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2iy transistor
Abstract: 2SD1227M
Text: h -? > v $ /Transistors 2SD1227M/2SD1862 2SD1227M 2SD1862 Xk°2*'>7^7°U-tfêNPN y bÿ>v*$ Epitaxil Planar NPN Silicon Transistor /Medium Power Amp. • £1-Jfi'+;£Eil/Dimensions Unit : mm 1) P c = l W i: ± # i'„ 2SD1227M 2SD1862 r 2.5 ± 0.2 6.8 i 0.2
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2SD1227M/2SD1862
2SD1227M
2SD1862
2SD1227M
2SB911M
SC-71
2iy transistor
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LT1067
Abstract: LT1067-9
Text: f I # W Xk I Final Electrical Specifications L | | ] ^ / \ | ^ _ LTC1067/LTC1067-50 TECHNOLOGY Rail-to-Rail, Very Low Noise Universal Dual Filter Building Block February 1998 F€flTUR€S D € S C R IP T IO n • ■ ■ ■ ■ Dual 2nd Order Filter in a 16-Lead SO Package
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LTC1067/LTC1067-50
16-Lead
LTC1067
LTC1067-50
LTC1067and
40piVRMS;
1067/LTC1067-50
identical21
-35dB
LT1067
LT1067-9
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TA7303P
Abstract: ta7303 TA73
Text: JAif 3 ir TA7303P -"FOR FM IF SYSTEM Unit in mm . Xk Stage Differential IF Amplifier. 2 3.0 MAX C1.0 % i»i^~Differential Peak Detector. f i l l Muting Circuit. . ' f?¥'Signal Meter Drive Circuit. -£r *« e i. Single In-line Package : 9 pin. . High Recovered Output Voltage : VoD=500mVrms Typ.
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TA7303P
500mVrms
TA7303P
ta7303
TA73
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c00f
Abstract: No abstract text available
Text: CXK58110OTM/YM •12LB SONY« 131072-word x 8-bit High Speed CMOS Static RAM Description CXK581100TM/YM is a general purpose high speed CMOS static RAM organized as 131,072 words by 8 bits. C X K 581100TM 32 pin TSO P Plastic C XK 58110OYM 32 pin TSO P (Plastic)
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CXK58110OTM/YM
581100TM
58110OYM
131072-word
CXK581100TM/YM
CXK581100TM:
CXK581100YM:
CXK581100TM
CXK581
CXK581100YM
c00f
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Untitled
Abstract: No abstract text available
Text: SONY« 8192 word X CXK5863AP/AJ 8-bit High Speed CMOS Static RAM D escription C XK 5863A P /A J are 65,536 bits high speed CMOS static RAMS organized as 8,192 words by 8-bits and operate from a single 5V supply. These devices are suitable fo r use' in high
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CXK5863AP/AJ
CXK5863AP
250mW
300mcycle
K5863AP
28pin
CXK5863AP
P-28P-06
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Untitled
Abstract: No abstract text available
Text: C XK SONY 131072-word X 581000P / M 1017121715L -1 0 L L /1 2 L U /1 5 L L 8-bit High Speed CMOS Static RAM Description CXK581000P/M is a general purpose high speed CMOS static RAM organized as 131, 072 words by 8 bits. Operating on a single 5V supply, this
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131072-word
581000P
1017121715L
CXK581000P/M
CXK581000P
XK581000M
CXK581000P/M-10L/1OLL
100ns
CXK581000P/M-12L/12LL
120ns
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Untitled
Abstract: No abstract text available
Text: CXK58257ATM/AYM -70LL/85LL/1 70L/85L/10L/1 2L L L OLL/12 SONY 32768-word X 8-bit High Speed CMOS Static RAM Description C XK 58257A TM /A Y M is a 256K bits, 32,768 words by 8 bits, CMOS static RAM. It is suitable fo r portable and battery back-up systems which require extremely small package
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CXK58257ATM/AYM
-70LL/85LL/1
OLL/12
32768-word
8257A
CXK58257ATM
CXK58257AYM
CXK58257ATM
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10 35L W1
Abstract: TA4F qt102
Text: SONY« CXK58258BP/BJ -20LU/25LL/35LL 20U25U35L Preliminary 32,768-word X 8-bit High Speed CM O S Static RAM Description CXK58258BP 28 pin DIP Plastic The C XK 58258B P/B J is a high speed CMOS static RAM which consists o f 32,768-word x 8-bit. It operates at 2 0 / 2 5 / 3 5 n s access time
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CXK58258BP/BJ
20Ly25L735L
-20LU/25LL/35LL
768-word
20/25/35ns
CXK58258BP/BJ-20L,
CXK58258BP/BJ-25L,
CXK58258BP/BJ-35L,
10 35L W1
TA4F
qt102
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SW50-4
Abstract: A2538
Text: S3 SW Series T e ch nical L ib r a ry HEATSINK PERFORMANCE TYPE SW LOCAL AIR SPEED M/s 100 - 25 2 15 1 5 9 0' CO . 80' SO L L J ? - 70' XK ^ 5 60 LUCO SW63 COLLI co¡> LU O r r CD _ j _ a c 2 50 < g u i 40' o g u -m 300 <c 20' co 10- <I— 5< ^S W 38 l §
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SW25-4
SW38-4
SW50-4
SW63-4
T0218
T0220
A2538
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Untitled
Abstract: No abstract text available
Text: SONY CORP/COMPONENT PRODS TO ]> Ê | Û 3 f l 5 3 a 3 VT? Mmmmm m m * OOCICmO ^ fA * i f i Q T -4 6 -2 3 -1 2 7ÓL71OL 8K-word X 8 bit High Speed CMOS Static RAM Package Outline Description The C XK 5864A P /A M is a 6 5 ,5 3 6 Unit: mm bits high speed CMOS static RAM organized as 8 ,1 9 2 words by 8 bits and
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L71OL
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A16Q2
Abstract: No abstract text available
Text: sony . C X K 5 8 1 1 0 O T M /Y M 131072-word x 8-bit High Speed CMOS Static RAM D escription C X K 5 8 1 10OTM /YM is a 1M bits, 131072 words by 8 bits, C M O S static RAM . It Is suitable for portable and C XK 58110OTM 32 pin TS O P Plastic C X K 58110OYM
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131072-word
10OTM
58110OTM
58110OYM
XK581100TM
581100YM
CXK581
10OTM
TSQPO32-P-O02O-A
10OYM
A16Q2
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CXK1206AM
Abstract: SONY CX CXK1206 lr2d CXK1206ATM
Text: SONY. CXK1206AM/ATM Video Signal Field Memory D escription C XK 1206A M The C X K 1 2 0 6 A M /A T M is a 3 -p o rt VRAM capable o f coping w ith bo th NTSC and PAL and o f s to rin g pictures fo r one 8-bit field w ith tw o chips, and is suitable as a m em ory fo r im proving
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CXK1206AM/ATM
CXK1206ATM
K1206AM
CXK1206ATM
40Qrm
Q4d-P-04CO
CXK1206AM
SONY CX
CXK1206
lr2d
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PIP02
Abstract: CXK58257AM CXK58257AP CXK58257ASP
Text: SONY. CXK58257AP/ASP/AM -7 0 L L /1 0 L L /1 2 L L * 32768-word x 8-bit High Speed CMOS Static RAM D escription C XK 58257AP 28 pin DIP Plastic C X K 5 8 2 5 7 A P /A S P /A M is 262,144 bits high speed CMOS sta tic RAM organized as 32,768 w ords by 8 bits and operates from a single 5V
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CXK58257AP/AS
32768-word
CXK58257AP/ASP/AM
300mil
CXK58257AP/ASP/AM-70L,
100ns
CXK58257AP/ASP/AM-12L,
120ns
CXK58257AP/AM-70LL,
PIP02
CXK58257AM
CXK58257AP
CXK58257ASP
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