XMXXX Search Results

trw 1016

Contextual Info: TÎH m TAC1020 and TAC1025 Complete 10-Bit, 20 and 25 Msps Analog-To-Digital Converter Boards Applications The TAC1020 and TAC1025 are A/D converter boards complete with voltage reference, input amplifier, track/ hold, timing generator, and output registers. They are

67c4033-15n

Contextual Info: 67C4033 Advanced Micro Devices Low Density First-In First-Out FIFO 64 x 5 CMOS Memory (Cascadable) DISTINCTIVE CHARACTERISTICS • Zero standby power ■ High-speed 15 MHz shift-in/shlft-out rates ■ Very low active power consumption ■ TTL-compatible Inputs and outputs

SN74ACT2152

Abstract: SN74ACT2154 SN74ACT2152A
Contextual Info: SN74ACT2152A, SN74ACT2154A 2K x 8 CACHE ADDRESS COMPARATORS D 3 1 5 6 , DECEMBER 1 9 8 8 -R E V IS E D MARCH 1 9 9 0 • • N PACKAGE Fast Address to Match Delay 2 0 or 2 5 ns Max TOP VIEW RESET C 1 ^ 2 8 Common I/O w ith Read Feature A4 C 2 H A5 27 1 A 6

Contextual Info: in te i’ 51C256HL HIGH PERFORMANCE LOW POWER RIPPLEMODE 256K X 1 CHMOS DYNAMIC RAM 51C256HL-15 51C256HL-20 Maximum Access Time ns 150 200 Maximum Column Address Access Time (ns) 70 90 Maximum CHtyOS Standby Current (mA) 0.1 0.1 Ripplemode Operation

Si502

Contextual Info: Si501/2/3 3 2 K H Z –100 MH Z CMEMS  オ シ レ ー タ 機能          広い周波数範囲：32 kHz~100 MHz  周波数が 100 MHz 以上の場合は Silicon Labs にお問い合わせくだ   さい。

Contextual Info: HB56UW1672EJN-5/6 128MB Unbuffered EDO DRAM DIMM 16-Mword X 72-bit, 8k Refresh, 1 Bank Module 18 pcs of 16M X 4 components HITACHI ADE-203-902A (Z) Rev. 1.0 Mar. 25, 1998 Description The HB56UW1672EJN belongs to 8-byte DIMM (Dual in-line Memory Module) family , and has been

Contextual Info: AP* X3 IW Preliminary Data Sheet March 1993 A A f e T Microelectronics DSP1610 Signal Coding Digital Signal Processor 1.0 Features 2.0 Description • 25 ns or 33 ns instruction cycle ■ 512 word boot ROM, and 4 Kword or 8 Kword downloadable dual-port RAM on-chip

Contextual Info: Data Sheet September 1995 = m A TsJ Microelectronics DSP1616-x30 Digital Signal Processor 1 Features 2 Description • Optimized for digital cellular applications with a bit manipulation unit for higher signal coding efficiency ■ 20 ns, 25 ns, and 30 ns instruction cycle times

0927H

Abstract: D015 P1480 SS22 0504H p1480-12cgdpas Priority Encoder CAM P1480-12CG 016Fh 0507H
Contextual Info: G E C W L P L E S S E Y S e p te m b e r 1995 PRELIMINARY INFORMATION S E M I C O N D U C T O R S D S 3112-2.0 P1480 LAN CAM 1kx64-BIT CMOS CONTENT-ADDRESSABLE MEMORY Supersedes February 1992 edition - version 1 The P1480 LAN CAM is a 1K X 64-bit fixed-width CMOS

Contextual Info: bM27S25 004203b ^70 A T A SHEET EC MOS INTEGRATED CIRCUIT /¿PD42S4190, 424190 4 M-BIT DYNAMIC RAM 256K-WORD BY 18-BIT, FAST PAGE MODE, BYTE WRITE MODE DESCRIPTION The //PD42S4190, 424190 are 262 144 w ords by 18 bits dynamic CMOS RAMs. The fast page m ode and byte

Contextual Info: IIIIIC • f f f / R T F IL Y S T S E M I C O N D U C T O R C A T 3 3 C 104/ C A T 33 C 104I 4K-Bit SERIAL E2PROM FEATURES ■ Low Power CMOS Technology Power-Up Inadvertant Write Protection ■ Single 3V Supply 100,000 Program/Erase Cycles ■ 256 x 16 or 512 x 8 Selectable Serial Memory

MC68488

Abstract: B513D 68488 gpib
Contextual Info: IMPLEMENTATION OF THE IEEE 488-1975 INSTRUMENTATION BUS W ITH THE MC68488 INTERFACE ADAPTER MOTOROLA MICROCOMPUTERS — SYSTEMS ON SILICON < 8 > M O TO R O LA GETTING ABOARD THE 488-1975 BUS Circuit diagrams external to M otorola products are included as a

STA 518A

Contextual Info: M O TO R O LA SEMICONDUCTOR TECHNICAL DATA Product Preview MCM67B518A 32K x 18 Bit BurstRAM Synchronous Fast Static RAM With Burst Counter and Self-Timed Write T h e M C M 67B 518A is a 589,824 bit synchronous fa st static random a ccess m e m ory designed to provide a burstable, h ig h -p erform a n ce, secondary cache

A13 K

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MCM6294 16K x 4 Bit Synchronous S tatic RAM with Output Registers and Output Enable T h e M C M 6 2 9 4 is a 6 5 ,5 3 6 b it s y n c h ro n o u s sta tic ra n d o m access m e m o ry o rg a n ized as P P ACKA G E 300 M IL P L A S T IC

Contextual Info: HM538253B Series HM538254B Series 262,144-word x 8-bit Multiport CMOS Video RAM HITACHI Description The HM538253B/HM538254B is a 2-Mbit multiport video RAM equipped with a 256-kword x 8-bit dynamic RAM and a 512-word x 8-bit SAM full-sized SAM . Its RAM and SAM operate independently and

OAOLP2

Abstract: temperature digital display JUMO Lan M smd transistor 1p7 bti ml-2 transistor SMD 1p6 transistor DK qe smd edto 116.4 8052ah basic toba 639 270645
Contextual Info: MCS@51 MICROCONTROLLER FAMILY USER’S MANUAL ORDER NO.: 272383-002 FEBRUARY 1994 Intel Corporation makes no warrsnfy for the uee of ite products and assumes no responsibility for any ewors which may appear in this document nor does it make a commitment to update the information contained herein.

SI500D

Contextual Info: Si500D D IFFERENTIAL O UTPUT S I L I C O N O SCILLATOR Features „ „ „ „ „ „ Quartz-free silicon oscillator Any-rate output frequencies from 0.9 to 200 MHz Quick turn delivery Highly reliable startup and operation Tri-state or power down operation 1.8, 2.5, or 3.3 V options

SI511

Abstract: SI510
Contextual Info: S i510/5 11 Ỉ ᬗ࢜ࢩ ࣞ ࣮ ࢱ X O 1 0 0 k H Z 㹼 2 5 0 MH Z ᶵ⬟        100 kHz 㹼 250 MHz ࡢ࡝ࡢ࿘Ἴᩘ  ࡛ࡶࢧ࣏࣮ࢺ పࢪࢵࢱ࣮ືస  2 㹼 4 㐌㛫ࡢ࣮ࣜࢻࢱ࢖࣒ 10 ᖺ࢚࣮ࢪࣥࢢࢆྵࡴ඲యᏳᐃᗘ 

Contextual Info: A M D ii ADVANCE INFORMATION Am30LV0064D 64 Megabit 8 M x 8-Bit CMOS 3.0 Volt-only Flash Memory with UltraNAND Technology DISTINCTIVE CHARACTERISTICS • Single pow er supply operation ■ — Separate VCCQ for 5 volt I/O tolerance ■ ■ Autom ated Program and Erase

Si500D

Abstract: xmxxxxx 500D AN409 Si500 Si500S
Contextual Info: Si500D D IFFERENTIAL O UTPUT S I L I C O N O SCILLATOR Features         Quartz-free, MEMS-free, and PLL-free all-silicon oscillator Any output frequencies from 0.9 to 200 MHz Short lead times Excellent temperature stability ±20 ppm

LM27555

Contextual Info: N EC MOS INTEGRATED CIRCUIT MC-421000A8,421000A9 SERIES 1 M-WORD BY 8-BIT, 1 M-WORD BY 9-BIT DYNAMIC RAM MODULE FAST PAGE MODE Description T h e M C - 4 2 1 0 0 0 A 8 is a 1 0 4 8 5 7 6 w o r d s b y 8 b its d y n a m ic R A M m o d u le o n w h ic h 2 p ie c e s o f * M D R A M

Contextual Info: int ! 51C256L LOW POWER 256K X 1 CHMOS DYNAMIC RAM 51C256L-15 51C25Ì6L-20 Maximum Access Time ns 150 200 Maximum CHMOS Standby Current (mA) 0.1 0.1 • Low Power Data Retention ■ TTL and HCT Compatible — Standby current, CHMOS — 100 jxA (max.) — Refresh period, RAS-Only — 32 ms (max)

Contextual Info: HB66B1616A Series-16,384-Word x 16-Bit High Speed Static RAM Module • PIN ASSIGNMENT ■ DESCRIPTION The HB66B1616A is a high speed 16K x 16 Static RAM module, mounted 4 pieces of 64K bit SRAM HM6289JP sealed in SOJ pack­ age. An outline of the HB66B1616A is 36-pin dual in-line package.

IC ATA 2388

Abstract: ATA 2388 we32100 YXXXX
Contextual Info: WE 32106 M ath A cceleratio n Unit Description The W E 32 10 6 M a th A c c e le ra tio n U n it MAU pro vid e s flo a tin g -p o in t c a p a b ility fo r th e WE 32100 M ic ro p ro c e s s o r a n d is fu lly co m p a tib le w ith th e IEEE S ta n d a rd fo r B in ary F lo a tin g ­