XNOR TTL Search Results

xnor gate motorola

Abstract: QUAD XNOR BR1339 MC74LCX810 2 input XNOR GATE xnor ttl
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview MC74LCX810 Low-Voltage CMOS Quad 2-Input XNOR Gate With 5V-Tolerant Inputs The MC74LCX810 is a high performance, quad 2–input XNOR gate operating from a 2.7 to 3.6V supply. High impedance TTL compatible

QUAD XNOR

Abstract: MC74LCX810
Contextual Info: Product Preview Low-Voltage CMOS Quad 2-Input XNOR Gate MC74LCX810 With 5V–Tolerant Inputs The MC74LCX810 is a high performance, quad 2–input XNOR gate operating from a 2.7 to 3.6V supply. High impedance TTL compatible inputs significantly reduce current loading to input drivers

TRANSISTOR SMD MARKING CODE WM

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview MC74LCX810 Low-Voltage CMOS Quad 2-Input XNOR Gate With 5V-Tolerant Inputs The MC74LCX810 is a high performance, quad 2–input XNOR gate operating from a 2.7 to 3.6V supply. High impedance TTL compatible

ecl nand Logic Family Specifications

Contextual Info: Enabling Energy Efficient Solutions Product Overview Created on: 10/26/2011 NB7L86M: 2.5 V / 3.3 V, 12 Gb/s Differential Clock/Data Smart Gate 2:1 Mux, AND/NAND, OR/NOR, XOR/XNOR w/CML Output and Internal Termination For complete documentation, see the data sheet

xnor ttl

Abstract: xnor gate ttl QUAD XNOR B303
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Product Preview M C 74LC X 810 L o w -V o lta g e CMOS Quad 2 -In p u t XN O R G a te With 5V-Tolerant Inputs The MC74LCX810 is a high performance, quad 2 -in put XNOR gate operating from a 2.7 to 3.6V supply. High impedance TTL compatible

XOR Gates

Abstract: 8 bit XOR Gates 4 input, 4 D flip-flops 2-bit adder layout schematic XOR Gates TTL ALU of 4 bit adder and subtractor ALU of 4 bit adder and subtractor CMOS XNOR Gates Nand gate Crystal Oscillator high frequency tristate xnor gate
Contextual Info: Standard Cell General Features • • • • • 0.8µm single poly, double metal CMOS technology Operating voltage 5V/3V Propagation delay of 2-input NAND with fanout=2 – 0.3ns for 5V high performance – 0.5ns for 5V high density – 0.5ns for 3V high performance

schematic of TTL XOR Gates

Abstract: TTL XOR Gates ttl 2-bit half adder cmos XOR Gates schematic XOR Gates xnor ttl ALU of 4 bit adder and subtractor "XOR Gates" XNOR GATE cmos gate nand nor xor
Contextual Info: 0.8µm Standard Cell General Features • • • • 0.8µm single poly, double metal CMOS technology Operating voltage: 5V/3V Propagation delay of 2-input NAND with fanout=2 – 0.3ns for 5V high performance – 0.5ns for 5V high density – 0.5ns for 3V high performance

MB81F643242B-10FN-X-S

Abstract: MB81F643242B-10FN-X
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE0.3E MEMORY CMOS 4 x 512 K × 32 BIT SYNCHRONOUS DYNAMIC RAM MB81F643242B-10FN-X CMOS 4-Bank × 524,288-Word × 32 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F643242B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing

MB81N643289

Abstract: Dynamic Memory Refresh Controller
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11401-2E MEMORY CMOS 8 x 256K x 32 BIT DOUBLE DATA RATE FCRAMTM MB81N643289-50/-60 CMOS 8-BANK x 262,144-WORD x 32 BIT Fast Cycle Random Access Memory FCRAM with Double Data Rate • DESCRIPTION The Fujitsu MB81N643289 is a CMOS Fast Cycle Random Access Memory (FCRAM) containing 67,108,864

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11402-1E MEMORY CMOS 8 x 256K x 32 BIT, FCRAMTM CORE BASED DOUBLE DATA RATE SDRAM MB81P643287-50/-60 CMOS 8-BANK x 262,144-WORD x 32 BIT, FCRAM Core Based Synchronous Dynamic Random Access Memory with Double Data Rate

MB81N643289

Abstract: mikroelektronik DDR
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE1E MEMORY CMOS 8 x 256K x 32 BIT DOUBLE DATA RATE FCRAMTM MB81N643289-50/-60 CMOS 8-BANK x 262,144-WORD x 32 BIT Fast Cycle Random Access Memory FCRAM with Double Data Rate • DESCRIPTION The Fujitsu MB81N643289 is a CMOS Fast Cycle Random Access Memory (FCRAM) containing 67,108,864

AE4E

Abstract: MB81F643242B-70
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE4E MEMORY CMOS 4 x 512 K × 32 BIT SYNCHRONOUS DYNAMIC RAM MB81F643242B-70/-10 CMOS 4-Bank × 524,288-Word × 32 Bit Synchronous Dynamic Random Access Memory • DESCRIPTION The Fujitsu MB81F643242B is a CMOS Synchronous Dynamic Random Access Memory SDRAM containing

MB81P643287

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11402-2E MEMORY CMOS 8 x 256K x 32 BIT, FCRAMTM CORE BASED DOUBLE DATA RATE SDRAM MB81P643287-50/-60 CMOS 8-BANK x 262,144-WORD x 32 BIT, FCRAM Core Based Synchronous Dynamic Random Access Memory with Double Data Rate

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS05-11401-1E MEMORY CMOS 8 x 256K x 32 BIT DOUBLE DATA RATE FCRAMTM MB81N643289-50/-60 CMOS 8-BANK x 262,144-WORD x 32 BIT Fast Cycle Random Access Memory FCRAM with Double Data Rate • DESCRIPTION The Fujitsu MB81N643289 is a CMOS Fast Cycle Random Access Memory (FCRAM) containing 67,108,864

MB81P643287

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET AE1E MEMORY CMOS 8 x 256K x 32 BIT, FCRAMTM CORE BASED DOUBLE DATA RATE SDRAM MB81P643287-50/-60 CMOS 8-BANK x 262,144-WORD x 32 BIT, FCRAM Core Based Synchronous Dynamic Random Access Memory with Double Data Rate • DESCRIPTION

Verilog code of 1-bit full subtractor

Abstract: Verilog code "1-bit full subtractor" verilog hdl code for D Flip flop accumulator verilog code for jk flip flop vhdl code for barrel shifter verilog code for 64 bit barrel shifter XOR Gates 5D208 8 BIT ALU design with verilog code full adder using x-OR and NAND gate
Contextual Info: Full Custom Design Expertise • • • • • • • • • • Microcontroller DSP PC peripheral Remote controller Telephone Communications Speech synthesizer Melody/Rhythm Home appliances Hand-held LCD games Process Process Operating Voltage 7.0µm TOCMOS

2220G8C

Contextual Info: TRww TMC2220/TMC2221 CMOS Programmable Digital Output Correlators 4 x 3 2 Bit, 20MHz 1 x 128 Bit, 20MHz The TM C 2220 20M H z, TTL com patible CMOS is composed of four separate 1 x 32 correlator The correlation scores of the four modules are com bined and output on tw o separate parallel,

74F2960

Contextual Info: MC74F2960/ Am2960 MC74F2960A Advance Information E R R O R D E T E C T IO N A N D C O R R E C T IO N C IR C U IT E R R O R D E T E C T IO N A N D C O R R E C T IO N C IR C U IT A D V A N C E D LOW POW ER SCH O TTK Y The MC74F2960 w ill be dual m arked w ith th e A M D p art num ber

D2 Package diagram

Abstract: ds1012s DS1012 DS1012M DS1012Z
Contextual Info: APPLICATION NOTE 1 Application Note 1 Pulse–Doublers Using the DS1012 Delay Line with Logic FEATURES • All Silicon Delay Line with logic • Low Power Operation: 53 µW max quiescent mode • Two input device/four independent buffered delays • TTL/CMOS compatible

RAS 2415

Abstract: hamming code mc74f MC74F2960A
Contextual Info: Order this data sheet by MC74F2960/D M MOTOROLA MC74F2960/ Am2960 MC74F2960A SEM ICO N D U CTO RS P.O BO X 20912 • P H O EN IX , A R IZ O N A 85036 A d v an ce In fo rm atio n E R R O R D ET EC T IO N A N D C O R R E C T IO N C IR C U IT E R R O R D E T E C T IO N A N D C O R R E C T I O N C IR C U I T

Contextual Info: Signetics 2960 Error D etection a n d Correction EDC Unit Product Specification Logic Products FEATURES • Boosts Memory Reliability — Corrects all single-bit errors. Detects all double and some triple-bit errors. Reliability of dynamic RAM systems is

Contextual Info: DS1012 PRELIMINARY D S 10 1 2 2- in -1 Sub-M iniature Silicon Delay Line with Logic DALLAS SEMICONDUCTOR FEATURES PIN DESCRIPTION • All-silicon time delay IN1 [ • 53 uW max. CMOS quiescent mode O U T3[ O U T l[ • Surface mount 8-pin mini-SOIC and standard

AOX2053

Contextual Info: ADVANC ED MICRO DEVICES 7b D E j 05575.25 0020=177 3 g " 025 7525 ADVANCED MICRO DEVICES r- Am3550 76C 2 0977 T - 4 2 - 1 1 —1 5 Mixed ECL/TTL I/O Mask-Programmable Gate Array PRELIMINARY DISTINCTIVE CHARACTERISTICS Up to 6228 equivalent gates - 576 internal cells

OS1012

Contextual Info: DS1012 2-in-1 Sub-Miniature Silicon Delay Line with Logic DALLAS SEMICONDUCTOR FEATURES PIN ASSIGNMENT • All-silicon tim e delay • Surface m ount 8-pin m ini-SOIC and standard 8-pin DIP L 1 B —i OUT3 C 2 7 H 1N2 OUT 1 3 6 D OUT2 4 5 J OUT4 INI • 53 \iW max. CM OS quiescent mode