XS 004 A Search Results

xs 004 a

Contextual Info: REVISION AC NOTES: 1. REPRESENTS A CRITICAL DIMENSION. 2. PARTS SHALL BE ROHS COMPLIANT. 3. PARTS TO BE PACKAGED IN TRAYS, TAIL SIDE DOWN. LESS THAN FULL TRAY QUANTITIES ARE TO BE PACKAGED IN COVERED TRAYS TRIMMED TO MATCH QUANTITY ORDERED 4. HDMR FORMERLY NAMED HDMI.

Contextual Info: 7 8 THIS DRAWING 15 UNPUBLISHED. COPYRIGHT 4 2 3 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ALL RIGHTS RESERVED. REVIS IO N S LOC DIST AD 25 LTR F HOUSING MATERIAL: CONTACT MATERIAL: G LA S S - FILLE D PHOSPHOR POLYESTER. COLOR: DESCRIPTION

R14F

Contextual Info: JOHANSON TI ©LOdY Johanson’s F-Series ceramic capacitors exhibit the excellent high frequency performance of thin film silicon oxide capacitors while offering some key advantages, namely better resistance to circuit assembly process extremes and lower cost. This unique MLCC design

39B4

Abstract: xs 004 a POSITION SENSITIVE DETECTOR 1/Detector/"Detector IC"/"CD"/INA104BM/SM/motion detector ic
Contextual Info: iC-OD OPTICAL POSITION SENSITIVE DETECTOR PSD FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Low-noise current amplifier with integrated position sensitive photodiode High reliability due to monolithical design Effective photodiode area 2.6mm x 0.88mm

Contextual Info: 8-bit Proprietary Microcontroller CMOS F2MC-8L MB89950 Series MB89951/953/P955/PV950 • OUTLINE The MB89950 series of single-chip compact microcontroller using the F2MC*-8L family core which can operate at high-speeds and low voltages. They contain peripherals such as timers, UART, serial interfaces, external

TRANSISTOR D 1765

Abstract: PH2731-80M 1J41
Contextual Info: H/ A- COM HÖE D P H 0 m SbMSSOS 0 0 0 0 7 7 1 SS3 • J1AP PH2731-80M Microwave Pulsed Power Transistor Design Characteristics A — B • • • • • 100 |xS Pulse Operation Broadband 2.7 - 3.1 GHz Operation Common Base Configuration Hermetic Metal / Ceramic Package

Contextual Info: AEPSS128K16 STATIC RAM MODULE >> 131 ,0 7 2 x 16 O rgan izatio n > > H igh s p e e d a d d re s s /c h ip s e le c t tim e > > H igh sp eed, H igh density 4 5 p in SIP > > C om pletely Static o p eratio n > > TTL co m p a tib le > > L ow p o w er, b attery b a c k -u p o p eratio n cap ability

Contextual Info: iC-OF if f if ll 3-BIT OPTO ENCODER FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Monolithic construction with integrated photodiodes ensures excellent matching and technical reliability Short track spacing of 600^m Elimination of dark currents through differential scanning

Contextual Info: _ S Sullins Headers M ic r o P l a s t ic s u llin s 1.OOmm [.039"] Contact Centers, Top/Bottom Entry SMT Female Headers SPECIFICATIO N S • Insulator Material: L.C.P, UL 94V-0 • Contact Resistance: 20m OHMs Max. • Current Rating: 1 AMP per contact • Dielectric Withstanding Voltage: AC 300 V.

Contextual Info: ASSP Power Supply BIPOLAR Power Management Switching 1C with flash memory power switching function MB3807A • DESCRIPTION When data is written to or read from flash memory, it requires that the voltage at its power supply (to 12 V for writing and to 3.3 or 5.0 V for reading).

Contextual Info: Features * Fast Read Access Time - 70 ns * Low Power CMOS Operation - 100 |jA max. Standby - 30 mA max. Active at 5 MHz * JEDEC Standard Packages - 32-Lead 600-mii PDIP - 32-Lead 450-mil SOIC SOP - 32-Lead PLCC - 32-Lead TSOP * 5V + 10% Supply * High Reliability CMOS Technology

12J60

Abstract: a3012711 J006 FH2114 300v 10 amp n-channel mosfet R750 S M R750 transistor A4I
Contextual Info: m an A M P company RF MOSFET Power Transistor, 75W, 24V 30 - 90 MHz FH2114 V2.00 Features ♦ N-Channel Enhancement Mode Device Meets CECOM Drawing A3012711 Designed for Frequency Hopping Systems 30*90 MHz Lower Capacitances for Broadband Operation Lower Noise Figure Than Bipolar Devices

TYN408G

Abstract: tyn 1225 tyn 682
Contextual Info: r Z J SCS-TNOMSON ^ 7# GENERAL PURPOSE & INDUSTRIAL MogœiiL[iM MôÊi MEDIUM POWER THYRISTORS & TRIACS < 100 A STANDARD THYRISTORS PLASTIC CASE Tamb = 25°C •o Type See NOTE V (A) 4 Arms I T e a s e = 90°C TXN / TYN 054 — VRRM = VDRM 004 Tj = 110°C

XS106

Contextual Info: FEATURES APPLICATIONS ♦ Photoelectric amplifier adapted to standard photodiodes ♦ Built-in bandpass filter with 300kHz center frequency ♦ Differential current-signal output with open drain low-side drivers ♦ Nonlinear transfer function results in wide dynamic range of

LA1050

Contextual Info: iC-OG 8-BIT DIFFERENTIAL SCANNING OPTO ENCODER t u FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Monolithic construction with integrated photodiodes ensures excellent matching and technical reliability Short track spacing of 600^m

Contextual Info: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . R ELEASED POR ALL C O P Y R IG H T B Y TYCO E L E C T R O N IC S 2 P U B L IC A T IO N R IG H T S LOC RESERVED. AD C O R P O R A T IO N . D IS T REVISIO N S 00 D E S C R IP T IO N J1 ECO —0 7 —0 2 9 1 0 0

Contextual Info: 4 T H IS D R A W IN G IS 3 U N P U B L IS H E D . R ELEASED FO R ALL C O P Y R IG H T B Y TYCO E L E C T R O N IC S 2 P U B L IC A T IO N R IG H T S LOC RESERVED. AD C O R P O R A T IO N . D IS T REVISIO N S 00 D E S C R IP T IO N E C O - 0 7- 100' DR 02M AY07

T85 Tyco

Abstract: 16A125VAC
Contextual Info: 4 T H IS D R A W IN G IS U N P U B L IS H E D . 3 R ELEASED FO R ALL C O P Y R IG H T B Y TYCO E L E C T R O N IC S P U B L IC A T IO N R IG H T S RESERVED. C O R P O R A T IO N . REVIS IO N S LOC D IS T AD 0 0 p LTR F D E S C R IP T IO N ECO —07 —01 0 68 6

L4945

Contextual Info: L4945/L4950 L4951 / = 7 S G S -TH O M S O N ID 0 » [ir a T m 0 S 5V/8.5V/1 OV VERY LOW DROP VOLTAGE REGULATORS • PRECISE OUTPUT VOLTAGE: 5V ± 4% L4945 8.5V ± 4% (L4950) 10V ± 4% (L4951) OVER FULL TEMPERATURE RANGE ( - 4 0 /1 2 5 °C) ■ VERY LOW VOLTAGE DROP (0.75Vmax)

F9707

Abstract: synthesizer pll mb15e03l
Contextual Info: ASSP • DESCRIPTION The Fujitsu M B15E03Lis serial input Phase Locked Loop PLL frequency synthesizer with a 1.2 GHz prescaler. A 64/65 or a 128/129 can be selected for the prescaler that enables pulsesStetf&llow operation. The latest BiCMOS process technology is used, resultantly a supply current is-limited as low as 2.5 mA typ.

MB84256C

Abstract: MB84256C-10 mb84256c-70 mb84256c-70L
Contextual Info: FUJITSU May 1994 Edition 1.0 DATA SHEET MB84256C-70/-70U-70LU-10/-10U-10LL CMOS 256K-BIT LOW POWER SRAM 32,768 WORD x 8-BIT CMOS STATIC RANDOM ACCESS MEMORY WITH DATA RETENTION The Fujitsu MB84256C is a 32,768-word by 8-bit static random access memory fabricated with a CMOS silicon gate process. The memory utilizes asynchronous

lg LED monitor circuit diagram

Abstract: LTA 703 S transistor da 307 702 transistor smd code 702 Z smd TRANSISTOR ffs transistor smd LTA 702 NE 702 Z TRANSISTOR smd
Contextual Info: iC-WG 14-BIT DIFFERENTIAL SCANNING OPTO ENCODER FEATURES APPLICATIONS ♦ Excellent matching and reliability due to monolithic construction with integrated photodiodes ♦ Short track pitch 600^m ♦ Elimination of dark currents due to differential scanning

Contextual Info: 4 T H IS D R A W IN G IS U N P U B L IS H E D . 3 R ELEASED FO R ALL C O P Y R IG H T B Y TYCO E L E C T R O N IC S 2 P U B L IC A T IO N R IG H T S RESERVED. C O R P O R A T IO N . LOC D IS T AD 00 REVISIO N S D E S C R IP T IO N F1 ECO- -001442 DR I7 J A N 0 8

Contextual Info: QSB363C Subminiature Plastic Silicon Infrared Phototransistor Features Description • NPN Silicon Phototransistor The QSB363 is a silicon phototransistor encapsulated in a clear infrared T-3/4 package. ■ T-3/4 2mm Surface Mount Package ■ Medium Wide Beam Angle, 24°