Y1 NPN Search Results

PXT8050

Abstract: Y1 SOT-89 marking y1 marking y1 sot-89
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89 PXT8050 Plastic-Encapsulate Transistors SOT-89 TRANSISTOR NPN FEATURES z Compliment to PXT8550 1. BASE MARKING: Y1 2. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value

ss8050 sot-323

Abstract: SS8050 Y1 ss8050 TRANSISTOR SS8050 SS8050 equivalent ss8550
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SS8050 TRANSISTOR NPN SOT-323 FEATURES Complimentary to SS8550 1. BASE 2. EMITTER MARKING: Y1 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors SS8050 TRANSISTOR NPN SOT-323 FEATURES Complimentary to SS8550 1. BASE 2. EMITTER MARKING: Y1 3. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol

ss8050 sot-23

Abstract: SS8050 sot-23 Y1 ss8550 sot-23 SS8050 Y1 SOT-23 SS8050 Y1 SS8050 equivalent SS8050 sot-23 equivalent ss8550 Y1 marking transistor sot23
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SS8050 SOT-23 TRANSISTOR NPN 1. BASE FEATURES Complimentary to SS8550 2. EMITTER 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SS8050 SOT-23 TRANSISTOR NPN 1. BASE FEATURES Complimentary to SS8550 2. EMITTER 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SS8050 SOT-23 TRANSISTOR NPN 1. BASE FEATURES Complimentary to SS8550 2. EMITTER 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter

ss8050 sot-23

Abstract: SS8050 sot-23 Y1 Y1 SOT-23 SS8050 Y1 ss8050 Y1 TRANSISTOR MARKING SOT23 5 marking y1 sot-23 transistor marking y1 ss8550 sot-23 y1 sot23
Contextual Info: SS8050 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complimentary to SS8550 MARKING: Y1 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage

Y1 SOT-89

Abstract: PXT8050 Marking y1 marking Y1 transistor marking y1 sot-89 transistor marking y1 y1 sot89 PXT8050 Y1
Contextual Info: PXT8050 SOT-89 Transistor NPN 1. BASE 2. COLLECTOR SOT-89 3. EMITTER Features — 4.6 4.4 1.8 1.4 1.6 1.4 B Compliment to PXT8550 2.6 4.25 2.4 3.75 MARKING: Y1 0.8 MIN 0.44 0.37 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units

3-EG08K-Y1-V1130

Abstract: S4669750
Contextual Info: Housing Style 8 mm - Nonembeddable, Miniature Threaded, picofast Quick Disconnect Part Number Ni 3-EG08K-AN6X-V1131 ID Number S4669750 Features Short Barrel Sen s Ran ing ge m m Inductive Sensors 3 3-Wire DC NPN Ni 3-EG08K-AP6X-V1131 Ni 3-EG08K-Y1-V1130

TRANSISTOR 404

Abstract: marking Y1 transistor y1 transistor
Contextual Info: Transistor, dual, PNP and NPN U M Y 1 N F M Y 1 A Features • • • Dimensions Units : mm available in UMT5 (UM5) and SMT5 (FMT, SC-74A) packages package marking: UMY1N and FMY1A; Y1 package contains an NPN (2SC2412K) and a PNP (2SA1037AK) transistor with common

Contextual Info: SS8050LT1 NPN 3 1 2 SOT-23 V CEO Value 25 40 6.0 1500 625 5.0 200 SS8050LT1=Y1 25 0.1 40 100 6.0 100 E=20 Vdc, I E= 0 40 5.0 WEITRON http://www.weitron.com.tw O 0.1 u 0.1 u 0.1 u SS8050LT1 ELECTRICAL CHARACTERISTICS TA=25 C unless otherwise noted) (Countinued)

1-EG05-AN6X-V1331

Abstract: 1-EG05-AP6X-V1331 S4608540 S4608740
Contextual Info: Housing Style 4 mm - Embeddable, Miniature Smooth, picofast Quick Disconnect Part Number Bi 1-EH04-AN6X-V1331 ID Number Features Sen s Ran ing ge m m Inductive Sensors Output 1 S4608540 3-Wire DC NPN Bi 1-EH04-AP6X-V1331 1 S4608440 3-Wire DC PNP Bi 1-EH04-Y1-V1330

Contextual Info: Housing Style 4 mm - Embeddable, Miniature Smooth, picofast Quick Disconnect Part Number Bi 1-EH04-AN6X-V1331 ID Number Features Sen s Ran ing ge m m Inductive Sensors Output 1 S4608540 3-Wire DC NPN Bi 1-EH04-AP6X-V1331 1 S4608440 3-Wire DC PNP Bi 1-EH04-Y1-V1330

Contextual Info: SS8050LT1 NPN 3 * “G” Lead Pb -Free 1 2 SOT-23 V CEO Value 25 40 6.0 1500 625 5.0 200 SS8050LT1=Y1 25 0.1 40 100 6.0 100 E=20 Vdc, I E= 0 ) 40 5.0 WEITRON http://www.weitron.com.tw O 0.1 u 0.1 u 0.1 u SS8050LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)

IC800

Abstract: y1 npn SS8050LT1
Contextual Info: SS8050LT1 NPN General Purpose Transistors 3 P b Lead Pb -Free 1 2 SOT-23 V CEO Value 25 40 6.0 1500 625 5.0 200 SS8050LT1=Y1 25 0.1 40 100 6.0 100 E=20 Vdc, I E= 0 40 5.0 WEITRON http://www.weitron.com.tw ) O 0.1 u 0.1 u 0.1 u SS8050LT1 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) (Countinued)

npn 8050

Abstract: XTAL 4M SN66010 SN66007 SN66012 SN66016 SN66020 SN66030 SN66040 SN66060
Contextual Info: SN66000 EV Board 4-Channel Speech Controller „ OVERVIEW BJT2 R2 V1+V2 R1 BJT1 SPK1 4M/8M SPK2 XTAL POWER EPROM RESET LED C2 Y1 C1 OSC IO Figure-1 „ CHIPS EMULATED: SN66 2 chan series : SN66007, SN66010 SN66 (4 chan) series : SN66012, SN66016, SN66020, SN66030, SN66040,

pulse stretcher

Abstract: D12SN6FVY D12SP6FP pulse stretcher circuit D12FV Cycolac ABS KJB Black D12FP D12SP6FVY
Contextual Info: D12 Series DIN Rail High Power Fiber Optic Sensors Powerful self-contained sensors for use with glass or plastic fiber optic assemblies • • • • • • • • Fiber optic sensors for DIN rail mounting; cabled or QD Fast response: 500µs standard, 50µs for Y & Y1 models

pulse stretcher

Abstract: pulse stretcher circuit D12FP cycolac banner D12FPY1
Contextual Info: D12 Series DIN Rail High Power Fiber Optic Sensors Powerful self-contained sensors for use with glass or plastic fiber optic assemblies • • • • • • • • Fiber optic sensors for DIN rail mounting; cabled or QD Fast response: 500µs standard, 50µs for Y & Y1 models

Power bjt

Abstract: bjt npn of lcd resistor 820k power bjt datasheet SN69040 27010 eprom sonix NPN transistor 8050
Contextual Info: SN69000 E.V. Board LCD Controller with Voice/Dual Tone Melody „ OVERVIEW I/O COM EPROM C SEG Figure-1 Reset VLC Y1,C2,C3 Power BJT LED R OSC SPK L1 & BUZ Figure-1 „ CHIPS EMULATED SN69040 only 1 December 26, 2000 SN69000 E.V. Board LCD Controller with Voice/Dual Tone Melody

MQ7 connector

Abstract: MQ9 connector MQ-7 VDOUT10 mq-6 of mq2 AL300 AVDD300 DVDD300 MD-13
Contextual Info: A B C D E 14.318MHz Opt AVDD300 DVDD300 Y1 10uh(Opt) 3 VDOUT7 VDOUT6 VDOUT5 VDOUT4 VDOUT3 VDOUT2 VDOUT1 VDOUT0 VDOUT15 VDOUT14 VDOUT13 VDOUT12 VDOUT11 VDOUT10 VDOUT9 VDOUT8 11 12 13 14 15 16 17 18 20 21 22 23 24 25 26 27 29 30 31 32 33 34 35 36 ROMD7 ROMD6

smd 3y3

Abstract: SMD K22 smd 1a2 RCA 2A3 JB16 smd 2a3 AL300 AVDD300 DVDD300 6 pin mini din lcd
Contextual Info: A B C D E 14.318MHz Opt AVDD300 DVDD300 Y1 10uh(Opt) VDOUT[15:0] 3 U2 2 20 22 A0 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 A11 A12 A13 A14 A15 O1 O2 O3 O4 O5 O6 O7 O8 ROMD0 ROMD1 ROMD2 ROMD3 ROMD4 ROMD5 ROMD6 ROMD7 VDOUT7 VDOUT6 VDOUT5 VDOUT4 VDOUT3 VDOUT2 VDOUT1 VDOUT0

2N6706

Abstract: 2N6705 2N6707 2N6711 2N6712 2N6713 2N6714 B445
Contextual Info: -Tosar.- • ~~1 DIM A B C D E F F h - B —I C n < 3 2 1 MIN MAX 4,32 5,33 4,45 5,20 3,18 4,19 0,41 0,55 0,35 0,50 0,55 1,14 1,40 2,54 12,70 5 D EG G H K L ALL DIMENSIONS ARE IN M.M. y1 PIN CONFIGURATION AVAILABLE IN TO-237 3 CDIL Code Style PIN 1 TO-237

RCA1E02

Abstract: 40327 RCA1A15 bu 25200 BUX67B
Contextual Info: w a rn High-Voltage n-p-n and p-n-p Type Selection Charts V CEO *sus V C EX^SUS^ V V •c A V CE V Temp.—°C 25 2N3439 F A M ILY n-p-n) High Voltage, Complementary to 2N5415 Family f yI = 15 M H z min; P y1 = 10 W max 40346 2N34402N4064403902N34392N406340385A U D IO T Y P E S

RDRAM SOP

Abstract: rdram clock generator concurrent RDRAM 72 RDRAM concurrent
Contextual Info: E2G1059-28-Y1 O K I Semiconductor M S M 5 7 1 8 C 5 / M P 5 7 Previous version: Jul. 1998 6 4 8 2 ~ 18Mb 2M x 9 & 64Mb (8M x 8) Concurrent RDRAM DESCRIPTION The 18/64-M egabit Concurrent Rambus DRAMs (RDRAM ) are extremely high-speed CMOS DRAMs organized as 2M or 8 M words by 8 or 9 bits. They are capable of bursting unlimited