Y1 TRANSISTOR MARKING SOT23 5 Search Results

Y1 TRANSISTOR MARKING SOT23 5 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTA2097	Toshiba Electronic Devices & Storage Corporation	PNP Bipolar Transistor / VCEO=-50 V / IC=-5 A / hFE=200~500 / VCE(sat)=-0.27 V / tf=60 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini

Y1 TRANSISTOR MARKING SOT23 5 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
MMSS8050 Abstract: marking y1 sot-23 Y1 SOT-23 800ma marking Y1 transistor sot-23 MARKING CODE 21 y1 npn Contextual Info: Shanghai Lunsure Electronic Technology Co.,Ltd Tel:0086-21-37185008 Fax:0086-21-57152769 MMSS8050 Features • • • • • • SOT-23 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation. Collector-current 1.5A Collector-base Voltage 40V	Original	MMSS8050 OT-23 625Watts -55OC OT-23 50mAdc, 10Vdc, 30MHz) MMSS8050 marking y1 sot-23 Y1 SOT-23 800ma marking Y1 transistor sot-23 MARKING CODE 21 y1 npn	PDF
SS8050 sot-23 Y1 Abstract: Y1 SOT-23 SS8050 Y1 ss8050 sot-23 SS8050 marking y1 sot-23 ss8050 equivalent marking Y1 transistor y1 SOT23 transistor marking y1 Contextual Info: BL Galaxy Electrical Production specification Silicon Epitaxial Planar Transistor FEATURES SS8050 Pb z Collector Current. IC= 1.5A） z Complementary To SS8550. z Collector dissipation:PC=300mW(TC=25℃ Lead-free APPLICATIONS z High Collector Current. SOT-23	Original	SS8050 SS8550. 300mW OT-23 BL/SSSTC086 SS8050 sot-23 Y1 Y1 SOT-23 SS8050 Y1 ss8050 sot-23 SS8050 marking y1 sot-23 ss8050 equivalent marking Y1 transistor y1 SOT23 transistor marking y1	PDF
ss8050 sot-23 Abstract: SS8050 sot-23 Y1 Y1 SOT-23 SS8050 Y1 ss8050 Y1 TRANSISTOR MARKING SOT23 5 marking y1 sot-23 transistor marking y1 ss8550 sot-23 y1 sot23 Contextual Info: SS8050 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complimentary to SS8550 MARKING: Y1 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage	Original	OT-23 SS8050 OT-23 SS8550 800mA 800mA, 30MHz 100mA ss8050 sot-23 SS8050 sot-23 Y1 Y1 SOT-23 SS8050 Y1 ss8050 Y1 TRANSISTOR MARKING SOT23 5 marking y1 sot-23 transistor marking y1 ss8550 sot-23 y1 sot23	PDF
SS8050 Abstract: 2ss8050 MARKING Y1 TRANSISTOR transistor marking y1 SS8050 sot-23 Y1 ss8050 sot-23 SS8050 Y1 ss8050 Y1 SOT-23 ss8050 equivalent transistor y1 Contextual Info: SS8050 NPN Silicon General Purpose Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-23 FEATURES      A L Complimentary to SS8550 Power Dissipation PCM : 0.3W Collector Current	Original	SS8050 OT-23 SS8550 100mA 800mA 800mA, 30MHz 26-Oct-2009 SS8050 2ss8050 MARKING Y1 TRANSISTOR transistor marking y1 SS8050 sot-23 Y1 ss8050 sot-23 SS8050 Y1 ss8050 Y1 SOT-23 ss8050 equivalent transistor y1	PDF
MMSS8050 Abstract: y1 npn gk120 800ma marking y1 sot-23 y1 marking code transistor Y1 SOT-23 Contextual Info: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMSS8050 Features • • • • • • SOT-23 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.	Original	MMSS8050 OT-23 625Watts -55OC OT-23 50mAdc, 10Vdc, 30MHz) MMSS8050 y1 npn gk120 800ma marking y1 sot-23 y1 marking code transistor Y1 SOT-23	PDF
y1 npn Abstract: transistor marking y1 Contextual Info: MCC omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMSS8050 Features • • • • • • SOT-23 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.	Original	MMSS8050 OT-23 625Watts -55OC OT-23 100uAdc, 40Vdc, 20Vdc, y1 npn transistor marking y1	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SS8050 SOT-23 TRANSISTOR NPN 1. BASE FEATURES Complimentary to SS8550 2. EMITTER 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter	Original	OT-23 SS8050 OT-23 SS8550 100mA 800mA 800mA, 30MHz	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SS8050 SOT-23 TRANSISTOR NPN 1. BASE FEATURES Complimentary to SS8550 2. EMITTER 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter	Original	OT-23 SS8050 OT-23 SS8550 100mA 800mA 800mA, 30MHz	PDF
Contextual Info: A Product Line of Diodes Incorporated ZXTN619MA 50V NPN LOW SATURATION TRANSISTOR Features and Benefits Mechanical Data • • • • • • • • • • • • • • • • • • BVCEO > 50V IC = 4A Continuous Collector Current Low Saturation Voltage 100mV max @ 1A	Original	ZXTN619MA 100mV AEC-Q101 DFN2020B-3 DS31892	PDF
Contextual Info: A Product Line of Diodes Incorporated ZXTN619MA 50V NPN LOW SATURATION TRANSISTOR Features and Benefits Mechanical Data • • • • • • • • • • • • • • • • • • BVCEO > 50V IC = 4A Continuous Collector Current Low Saturation Voltage 100mV max @ 1A	Original	ZXTN619MA 100mV AEC-Q101 DFN2020B-3 DS31892	PDF
transistor marking y1 Abstract: mmss8050 Contextual Info: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMSS8050 Features • • • • • • SOT-23 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.	Original	MMSS8050 OT-23 625Watts -55OC OT-23 100uAdc, transistor marking y1 mmss8050	PDF
Y1 TRANSISTOR MARKING SOT23 5 Abstract: marking y1 sot-23 MARKING Y1 y1 npn Contextual Info: MCC TM Micro Commercial Components omponents 20736 Marilla Street Chatsworth !"# $ % !"# MMSS8050 Features • • • • • • SOT-23 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.	Original	MMSS8050 OT-23 625Watts -55OC OT-23 Y1 TRANSISTOR MARKING SOT23 5 marking y1 sot-23 MARKING Y1 y1 npn	PDF
Y1 SOT-23 Abstract: marking y1 sot-23 8050LT1 marking Y1 sot23 y1 SOT23 Y1 marking transistor sot23 Y1 TRANSISTOR MARKING SOT23 5 8050L SS8050LT1 MARKING E1 SOT23 TRANSISTOR Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 SS8050LT1 TRANSISTOR（ NPN ） 1. BASE 2. EMITTER 3. COLLECTOR FEATURES １．０ Power dissipation PCM : 0.3 W（Tamb=25℃） Collector current ICM : 1.5 A	Original	OT-23 OT--23 SS8050LT1 8050LT1 037TPY 950TPY 550REF 022REF Y1 SOT-23 marking y1 sot-23 marking Y1 sot23 y1 SOT23 Y1 marking transistor sot23 Y1 TRANSISTOR MARKING SOT23 5 8050L SS8050LT1 MARKING E1 SOT23 TRANSISTOR	PDF
Contextual Info: A Product Line of Diodes Incorporated ZXTN619MA 50V NPN LOW SATURATION TRANSISTOR Features Mechanical Data • • BVCEO > 50V IC = 4A Continuous Collector Current • Case: U-DFN2020-3 Type B • • • Low Saturation Voltage 100mV max @1A RSAT = 68 mΩ for a Low Equivalent On-Resistance	Original	ZXTN619MA U-DFN2020-3 100mV J-STD-020 DS31892	PDF

ss8050 sot-23 Abstract: SS8050 sot-23 Y1 ss8550 sot-23 SS8050 Y1 SOT-23 SS8050 Y1 SS8050 equivalent SS8050 sot-23 equivalent ss8550 Y1 marking transistor sot23 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SS8050 SOT-23 TRANSISTOR NPN 1. BASE FEATURES Complimentary to SS8550 2. EMITTER 3. COLLECTOR MARKING: Y1 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter	Original	OT-23 SS8050 OT-23 SS8550 ss8050 sot-23 SS8050 sot-23 Y1 ss8550 sot-23 SS8050 Y1 SOT-23 SS8050 Y1 SS8050 equivalent SS8050 sot-23 equivalent ss8550 Y1 marking transistor sot23	PDF
Contextual Info: Transistors Transistor T SMD Type Product specification KST8050 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 Collector Current: IC=1.5A 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01	Original	KST8050 OT-23	PDF
MMSS8050-L Contextual Info: MCC TM Micro Commercial Components MMSS8050-L MMSS8050-H omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • • SOT-23 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.	Original	MMSS8050-L MMSS8050-H OT-23 625Watts -55OC OT-23 MMSS8050-L	PDF
"micro x" transistor Abstract: MMSS8050-L Contextual Info: MCC TM Micro Commercial Components MMSS8050-L MMSS8050-H omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • • SOT-23 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.	Original	MMSS8050-L MMSS8050-H OT-23 625Watts -55OC OT-23 100uAdc, "micro x" transistor	PDF
mmss8050 Abstract: MMSS8050-L Contextual Info: MCC TM Micro Commercial Components MMSS8050-L MMSS8050-H omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • • SOT-23 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.	Original	MMSS8050-L MMSS8050-H OT-23 625Watts -55OC OT-23 100uAdc, mmss8050	PDF
Contextual Info: MCC TM Micro Commercial Components MMSS8050-L MMSS8050-H omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features • • • • • • SOT-23 Plastic-Encapsulate Transistors Capable of 0.3Watts Tamb=25 OC of Power Dissipation.	Original	MMSS8050-L MMSS8050-H OT-23 -55OC OT-23	PDF
MMSS8050-L Contextual Info: MCC TM Micro Commercial Components MMSS8050-L MMSS8050-H omponents 20736 Marilla Street Chatsworth !"# $ % !"# Features SOT-23 Plastic-Encapsulate Transistors Capable of 0.625Watts Tamb=25 OC of Power Dissipation.	Original	MMSS8050-L MMSS8050-H OT-23 625Watts -55OC OT-23 MMSS8050-L	PDF
SS8050LT Abstract: 8050LT1 Contextual Info: DONGGUAN FORWARD SEMICONDUCTOR CO.,LTD SOT-23 Plastic-Encapsulate Transistors SS8050LT1 TRANSISTOR NPN FEATURES Power dissipation PCM: W(Tamb=25℃) 0.3 Collector current ICM: 1.5 A 40 V Collector-base voltage V(BR)CBO: Operating and storage junction temperature range	Original	OT-23 SS8050LT1 100mA 800mA 30MHZ 8050LT1 SS8050LT	PDF
7wz14 Abstract: A114 NL27WZ04 NL27WZ14 NL27WZ14DFT2 Contextual Info: NL27WZ14 Dual Schmitt-Trigger Inverter The NL27WZ14 is a high performance dual inverter with Schmitt–Trigger inputs operating from a 2.3 to 5.5 V supply. Pin configuration and function are the same as the NL27WZ04, but the inputs have hysteresis and, with its Schmitt trigger function, the	Original	NL27WZ14 NL27WZ14 NL27WZ04, r14525 NL27WZ14/D 7wz14 A114 NL27WZ04 NL27WZ14DFT2	PDF
X2 marking code sot 23 Abstract: TC1272 TC1273 TC1274 Y2 SOT23-3 SOT23 MARK Y3 TC1272-5ENB x2 marking sot23-3 marking NB SOT-23 Contextual Info: Obsolete Device TC1272/TC1273/TC1274 3-Pin Reset Monitors for 5V Systems Features General Description • Precision VCC Monitor for 5.0V Systems • 100 ms Minimum RESET, RESET Output Duration • Output Valid to VCC = 1.2V • VCC Transient Immunity • Small 3-Pin SOT-23 Package	Original	TC1272/TC1273/TC1274 OT-23 TC1272/TC1273/TC1274 OT-23 op36-4803 DS21382C-page X2 marking code sot 23 TC1272 TC1273 TC1274 Y2 SOT23-3 SOT23 MARK Y3 TC1272-5ENB x2 marking sot23-3 marking NB SOT-23	PDF

Y1 TRANSISTOR MARKING SOT23 5 Search Results

Y1 TRANSISTOR MARKING SOT23 5 Result Highlights (5)

Y1 TRANSISTOR MARKING SOT23 5 Datasheets Context Search

MMSS8050

SS8050 sot-23 Y1

ss8050 sot-23

SS8050

MMSS8050

y1 npn

transistor marking y1

Y1 TRANSISTOR MARKING SOT23 5

Y1 SOT-23

ss8050 sot-23

MMSS8050-L

"micro x" transistor

mmss8050

MMSS8050-L

SS8050LT

7wz14

X2 marking code sot 23