Y12E Search Results

TC59SM816BFT

Abstract: THMY12E11B70
Contextual Info: TO SH IBA THM Y12E11B70f75f80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The Y12E11B is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 5 TC59SM816BFT DRAMs and an unbuffer on a printed circuit board.

TESLA BP 4651

Abstract: tesla bm 388e TESLA TESLA BM 429 4090 dm hf nu bp 4490 BM 445E BP4650 tesla transistoren TESLA BS 488 ELEKTROMAGNET MIT STABILISIERTEM
Contextual Info: Fertigungssortiment ELEKTRONISCHE MESSGERÄTE ELEKTRONENMIKROSKOPE NMR SPEKTROMETER EINHEITLICHE KLASSIFIKATION: FACHGEBIET391 TESLA BRNO NATIONALUNTERNEHMEN INHALT 39111 - ELEKTRONISCHE MESSGERÄTE FÜR SPANNUNGEN UND ABGELEITETE GROSSEN K L A S S IF IK A T IO N

Katalog CEMI

Abstract: OA81 diode byp 660-50r Philips BC147 p 181 transoptor Mullard oa81 Hitachi 12V MS 5A-181 OA81 BA102 diode telefunken hr 780 rds
Contextual Info: WSTIJP W ydaw nictw a Przem yslu M aszynowego WEMA przekazujq uzytkow nikom branzow y katalog pt. E l e m e n t y pólp rz e w o d n i k o w e , zaw ierajqcy dokladne inform acje techniczne dotycz^ce elem entów pólprzew odnikow ych produkow anych w Polsce n a skal^ przem yslow ^. W szystkie w yroby

400HA-12E

Abstract: CM100TF-12e
Contextual Info: POliJEREX I NC BTE I> • 72=^21 DDG37SS 1 HPRX T^2 W HHBSX_ _ Powerex, Inc., HilUs Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex Europe, S.A., 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 EFFICIENT E-SERIES IGBTMOD TRANSISTOR POWER MODULES

mosfet p321

Abstract: motorola an215a application Y12t Using Linvill Techniques AN166 linvill H12C TRANSISTOR MAKING dual-gate YB motorola an215a Y parameters of transistors y11t
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by AN215A/D SEMICONDUCTOR APPLICATION NOTE AN215A RF Small Signal Design Using TwoĆPort Parameters Freescale Semiconductor, Inc. Prepared by: Roy Hejhall INTRODUCTION GENERAL DESIGN CONSIDERATIONS

THMY12E10A70

Abstract: ras 1215
Contextual Info: TOSHIBA Y12E10A70,75,80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The Y12E10A is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of nine TC59SM708AFT DRAMs and PLL/Registers on a printed circuit board.

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

AN215A

Abstract: mosfet p321 Y12t Using Linvill Techniques common base amplifier circuit designing Using Linvill Techniques for R. F. Amplifiers y11t h21b Y12F common emitter amplifier circuit designing
Contextual Info: Order this document by AN215A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN215A RF SMALL SIGNAL DESIGN USING TWO-PORT PARAMETERS Prepared by: Roy Hejhall INTRODUCTION GENERAL DESIGN CONSIDERATIONS Design of the solid-state, small-signal RF amplifier using two-port parameters is a systematic, mathematical procedure, with an exact solution free from approximation

RA9-RA10

Abstract: 08l01
Contextual Info: TOSHIBA Y12E10A70,75,80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The Y12E10A is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of nine TC59SM708AFT DRAMs and PLL/Registers on a printed circuit board.

MC789P

Abstract: MC946F/MC789P l9945 mc2100 els MC1110G mc787p MC879P SG4002 MC779P MC892P
Contextual Info: GENERAL INFORMATION Index Interchangeability Guide Digital Circuits A p p lications Selector Guide MECL M ECL M C300/M C 350 Series MECL II M C 1000/M C 1200 Series MHTL MC660 Series MTTL M T T L M C500/M C400 Series M T T L II M C2100/M C2000 Series M T T L III M C3000 Series

THMY12E10A70

Contextual Info: TOSHIBA Y12E10A70,75,80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The Y12E10A is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of nine TC59SM708AFT DRAMs and PLL/Registers on a printed circuit board.

mosfet p321

Abstract: Y12t Using Linvill Techniques Using Linvill Techniques for R. F. Amplifiers y11t AN166 B22K 2S12 2Z12 AN215A
Contextual Info: Order this document by AN215A/D MOTOROLA SEMICONDUCTOR APPLICATION NOTE AN215A RF SMALL SIGNAL DESIGN USING TWO-PORT PARAMETERS Prepared by: Roy Hejhall INTRODUCTION Design of the solid-state, small-signal RF amplifier using two-port parameters is a systematic, mathematical procedure, with an exact solution free from approximation

Contextual Info: HOLTEK r r HT1608L 2x20 Channel LCD Driver Features • • • • O perating voltage: 2.7V~5.2V LCD driving voltage: 3.0V~5.0V 40 in tern al LC D drivers av ailab le B ia s voltage: static to 1/5 b ias • • LC D driver with serial/p arallel conversion

Motorola transistors MRF 947

Abstract: motorola hep cross reference 2N5070 2N5591 MOTOROLA Semicon volume 1 mrf532 transistor equivalents for 2n3866 siemens semiconductor manual Microlab Splitter Specification sheet pt9797
Contextual Info: MOTOROLA RF DATA MANUAL Prepared by Technical Information Center M otorola’s leadership position of RF power, small-signal transistors and hybrid amplifiers is by research and new product development coupled with a com plete in-house m anufacturing ca pa b ility in clu d in g silico n g row ing,