Y514170 Search Results
Y514170 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: HYUNDAI SEMICONDUCTOR H Y514170 S e r ie s 256K X 16-bit CMOS ORAM with 2 WE PRELIMINARY DESCRIPTION The Y514170 is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access |
OCR Scan |
Y514170 16-bit HY514170 400mil 40pin 40/44pin 1AC09-00-APR93 4b75Dflfl | |
CX-381Contextual Info: -HYUNDAI Y514170B Series 256KX 16-bit CMOS DRAM with 2 WE PRELIMINARY DESCRIPTION The Y514170B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access |
OCR Scan |
HY514170B 256KX 16-bit 400mil 40pin 40/44pin 825mW CX-381 | |
Contextual Info: • • H Y U N D A I H Y 5 1 4 1 7 0 B S e r ie s 256KX 16-bit CMOS DRAM with 2 WE PRELIMINARY DESCRIPTION The Y514170B is the new generation and fast dynamic RAM organized 262,144 x 16-bit configuration employing advanced submicron CMOS process technology and advanced circuit design technique to achieve fast access |
OCR Scan |
256KX 16-bit HY514170B 400mil 40pin 40/44pin 1AC21-00-MAY94 PQS702 |