YK DIODE Search Results

marking code YK

Abstract: transistor yk yk diode
Contextual Info: SDB310WS SCHOTTKY BARRIER DIODE PINNING Features • Low power rectified • Silicon epitaxial type • High reliability DESCRIPTION PIN 1 Cathode 2 Anode 2 1 YK Top View Marking Code: "YK" Simplified outline SOD-323 and symbol Absolute Maximum Ratings Ta = 25 OC

MOSFET B20 N03

Abstract: CXD 9843 A09 N03 MOSFET MOSFET B20 p03 DL1416 FAN A31 H07 schottky k04 apple A5 processor APPLE A7 343S0181
Contextual Info: Yellowknife Engineering Specification Version 1.0 YK AN ENGINEERING SPECIFICATION FOR Yellowknife A PowerPCTM Reference Platform Revision 1.0 October 30, 1996 Contact Information: RISC Hotline Motorola RISC Applications 6501 Wm. Cannon Dr. West MD/OE42 Austin, TX 78735

mosfet protect

Abstract: IRF53 design ideas World transistors databook IRF530S LTC4251 LTC4252 LTC4252-1 LTC4253 SMAT70A
Contextual Info: DESIGN FEATURES –48V Hot Swap Controller Offers Comprehensive Protection for by YK Sim and Mitchell Lee Telecom Systems Introduction High performance, high reliability telecom systems employ distributed power modules to generate low voltage, high current supplies from a –48V

Contextual Info: 1.2V Drive Pch MOSFET RZE002P02 Structure Silicon P-channel MOSFET Dimensions Unit : mm EMT3 0.7 1.6 Features 1) High speed switching. 2) Small package (EMT3). 3) 1.2V drive. 0.55 0.3 (1) 0.2 0.2 0.5 0.5 1.0 Applications Switching (1)Source (2)Gate Abbreviated symbol : YK

D 92 M - 02 DIODE

Abstract: c 92 M - 02 DIODE ym oca
Contextual Info: 5 /a s /h = * P - A 'U T ' Ç 'C X — YSchottky Barrier Diode OUTLINE DIMENSIONS DE5SC6M Package I E Ky9 VW-U><7J\°-yK 0 # # /1 Standard soldering pad 60V 5A * « : ±0.1 Tolerance: ±0.1 D ® •S M D • P rrsm T’y ^'5 5.2 ±0-2 i ffill •im-xmzamm

SHINDENGEN DIODE

Contextual Info: U n y n - n z ÿ ' f * - K U tip e Super P ast R ecovery Diode t - k Axial Diode mB-ïffèm S2L20U OUTLINE DIMENSIONS Case: 1.0^ 1 i 4.4 ' 200V 1.5A ¥ YK U < j) ° - •trr3 5 n s T ) : CalhiHlc (2 ) : Anodo t tfc N J W O •¿■tsmmmMw M arking •S R S S

D3FS4A

Abstract: diode code ae
Contextual Info: aH S 7V H 3. 5^3% > h ^ r — /X U 7 7 Schottky Barrier Diode Surface Mounting Device Tl"— K O U T L IN E D IM E N S IO N S Case ! 2 F Type D3FS4A U n it ’ mm ' C a th o d e m ark 40V 2.6A « &o u . CO & « 2 .5 6.1 - T y p e No. D a te code N'-yK 73##/

MAX236CEG

Abstract: MAX244 uc 232A
Contextual Info: 19-4323; Rev 3; 5/94 yk lX X IV M + 5 V -P o w e re d , M u lti-C h a n n e l R S -2 3 2 D riv e rs /R e c e iv e rs These parts are particulary useful in battery-powered systems since their low-power shutdown mode reduces pow er d issipa tion to less than 5nW. The MAX225,

Contextual Info: - •_ yK UNITRODE CORP — TE 9347963 U N ITR O D E CO RP DE~ ^347^^3 GD10ÛT3 0 92D 10893 D P O W E R M O S F E T T R A N S IS T O R S 50 Volt, 0.05 Ohm N-Channel ^ nzso T- T f l - l l FEATURES D E S C R IP T IO N • • • • • • These low voltage power MOSFETS have been designed for optimum performance in low

RKN8

Abstract: ln5340a LN5260A LN5430a LN543GA RKS 04 ln5340am0 LN-5260A LN516RA rk 88
Contextual Info: Visible Light Emitting Diodes • Numerical Display Devices One Color Digit (Size) +1 Display (0.3 inch) +1 Display (0.4 inch) Appearance LN504R LN504G LN504Y LN503R LN503G LN503Y - - Digit (Size) 1 Digit (0.4 inch) 1 Digit (0.6 inch) | f i LN513RA/RK

RKN8

Abstract: LN5260A ln5340a ln5340am0 LN543RAN8 LN514RA/RK
Contextual Info: Visible Light Emitting Diodes •Numerical Display Devices Digit Size +1 Display (0.3 inch)!+1 Display (0.4 inch) +1 Display (0.6 inch) 1 Digit (0.3 inch) Appearance S LN503R LN503G LN503Y Red Em itted Green color Amber LN504R LN504G LN504Y - Orange Dig* (Si»)

Contextual Info: DL969= SHQT QECSIFIEQ RPECIALIRSR DL99:9 SECHNICAL RPECIFICASIONR OF HIGH RPEED RVISCHING DIODER UOLSAGE QANGE 2 :5 kg 655 Ugdkj CTQQENS 2 536: kg 537 Aeh]i] FEASTQER / / / / / Rada[gf ]hakYoaYd hdYfYi \ag\]j Lgn hgn]i dgjj1 `a_` ]^^a[a]f[p Lgn d]YcY_] Lgn ^ginYi\ mgdkY_]

DL96

Abstract: DL4148 S 657 A
Contextual Info: DL969= DC COMPONENTS CO., LTD. Q SHQT QECSIFIEQ RPECIALIRSR DL99:9 SECHNICAL RPECIFICASIONR OF HIGH RPEED RVISCHING DIODER UOLSAGE QANGE 2 :5 kg 655 Ugdkj CTQQENS 2 536: kg 537 Aeh]i] FEASTQER / / / / / Rada[gf ]hakYoaYd hdYfYi \ag\]j Lgn hgn]i dgjj1 `a_` ]^^a[a]f[p

6526

Abstract: 65eA w 6554 DL4148 DL4150 DL4151 DL4448 DL4454 SB655 gk 735
Contextual Info: DL969= DC COMPONENTS CO., LTD. Q SHQT QECSIFIEQ RPECIALIRSR DL99:9 SECHNICAL RPECIFICASIONR OF HIGH RPEED RVISCHING DIODER UOLSAGE QANGE 2 :5 kg 655 Ugdkj CTQQENS 2 536: kg 537 Aeh]i] FEASTQER / / / / / Rada[gf ]hakYoaYd hdYfYi \ag\]j Lgn hgn]i dgjj1 `a_` ]^^a[a]f[p

Contextual Info: Light Emitting Diodes LNG460YKX Square Type □3.0 mm x 2.0 mm Series • Absolute Maximum Ratings Ta = 25°C Parameter  Lighting Color / Lens Color Symbol Rating Unit Power dissipation PD 90 mW Forward current IF 30 mA Pulse forward current * IFP 150

Contextual Info: Light Emitting Diodes LN260RPX Square Type □3.0 mm x 2.0 mm Series • Absolute Maximum Ratings Ta = 25°C Parameter  Lighting Color / Lens Color Symbol Rating Unit Power dissipation PD 70 mW Forward current IF 25 mA Pulse forward current * IFP 150 mA

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Light Emitting Diodes LNG460YKX Square Type □3.0 mm x 2.0 mm Series • Absolute Maximum Ratings Ta = 25°C Parameter  Lighting Color / Lens Color Symbol Rating Unit Power dissipation PD

Contextual Info: Light Emitting Diodes LN360GPX Square Type □3.0 mm x 2.0 mm Series • Absolute Maximum Ratings Ta = 25°C Parameter  Lighting Color / Lens Color Symbol Rating Unit Power dissipation PD 90 mW Forward current IF 30 mA Pulse forward current * IFP 150 mA

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Light Emitting Diodes LN360GPX Square Type □3.0 mm x 2.0 mm Series • Absolute Maximum Ratings Ta = 25°C Parameter  Lighting Color / Lens Color Symbol Rating Unit Power dissipation PD 90

QS33X257

Abstract: 74F257
Contextual Info: QS33X257 Q QUALITY SEMICONDUCTOR, INC. QuickSwitch Products High-Speed CMOS QuickSwitch 24:12 Mux/Demux QS33X257 FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to VCC • Bidirectional signal flow • 24:12 Mux/Demux switches connect

Contextual Info: SIEMENS SFH2115 GaAs ENERGY CONVERTER Package Dimensions in mm FEATURES • • • • 8 Diodes Connected in Serle* T 0 18 Package Floating Output Signal FC Connector for use with 200 Fiber, NA=0.37 Characteristics TA=25“C Parameter Radiant Input Power

CSK6

Abstract: surge suppressor circuit transistor 13602 E67871 csk6-ylw yk diode
Contextual Info: Electromagnetic Counter CSK Miniature, Electromagnetic Totalizing Counter High-speed response up to 35 cps Locking mechanism for errorless operation Unique mechanism eliminates digit displacement during resets UL listed model also available (File No. E67871)

SS125

Contextual Info: SEM ICONDUCTOR TE CHNICAL DATA KDV262E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATV TUNING. FEATURES • High Capacitance Ratio : C2V/C25V=12.5 Typ. -1 1 • Low Series Resistance : rs=0.6£2(Typ.) • Excellent C-V Characteristics, and Small Tracking Error.

ie3e

Contextual Info: n - n x V 'C X - Y - H£I Super Fast Recovery Diode Single Diode Surface Mount OUTLINE DIMENSIONS D2FL40 ' Cathode mark 400V 1.3A I>r • /J v ik S M D • f iy - r x / 9 /, _ i wo LL ^ i l l CM •trr5 0 n s m m •S R S ÎÜ •D C /D C Unit • mm Package I 2F