YN 147 Search Results

24C02 W6

Contextual Info: HB56UW1673EJN Series, HB56UW1665EJN Series 1 6 7 7 7 2 16-w ord x 72-bit H igh D en sity D yn am ic R A M M odule 1 6 7 7 7 2 16-w ord x 64-bit H igh D en sity D yn am ic R A M M odule HITACHI A D E -203-655 Z Preliminary Rev. 0.0 Sep. 9, 1996 D escrip tion

Contextual Info: IBM0325404 IBM0325804 IBM0325164 IBM03254B4 A dvanced 256M b S yn ch ro n o u s DRAM - Die R evision A Features • High Performance: •66, Í -260, Í -360, : -10, CL=3 Í CL=3 Í CL=3 : cl=3 ; Units : i fcK iCIock Frequency 147 ; 125 ; 125 ; lo o : MHz :

2N6353

Abstract: 2n6351 RB1-E
Contextual Info: SÖE D TELED YN E COMPONENTS ö*il7bC15 üDQtiS42 t. T -3 3 -a 7 NPN POWER DARLINGTON 5AMP SWITCHING TRANSISTORS 2N6350 thru 2N6353 GEOMETRY 508 • KD5A • LowVCE Sat • High Gain TO-33 • Monolithic Construction MAXIMUM RATINGS SYMBOL 2N6350 2N6351 2N6352 2N6353 UNIT

0364404CT3C

Abstract: 0364804CT3C 0364804CT3C-360 0364164PT3C-10
Contextual Info: I =¥= =• = IBM0364804 IBM0364164 IBM0364404 IBM03644B4 P relim inary 64M b S yn ch ro n o u s D RAM - Die R evision C Features • Programmable Wrap: Sequential or Interleave • High Performance: • Multiple Burst Read with Single Write Option -68, i -260, ! -360,

Contextual Info: Preliminary Spec. MITSUBISHI LSIs MH16V7245ATJ -5, -6 _ HYPER PAGE MODE 1207959552 - BIT 16777216 - WORD BY 72 - BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION T he M H 1 6V 7 245 A T J is 16 77 72 16-w ord x 7 2 -bit d yn a m ic ram

Contextual Info: Pre li mi n ar y Spec. MITSUBISHI LSIs MH16V7245BATJ -5, -6 _ HYPER PAGE MODE 1207959552 - BIT 16777216 - WORD BY 72 - BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION T he M H 1 6V 7 245 B A T J is 16 77 72 16-w ord x 7 2 -bit d yn am ic

Contextual Info: MITSUBISHI LSIs M H 1 S 7 2 C X J -1 0 ,-1 2 ,-1 5 75,497,472-B IT 1,048,576-W O R D BY 72-BIT Synchronous D YN AM IC RAM PRELIMINARY Some of contents are subject to change without notice. DESCRIPTION PIN CONFIGURATION The MH1S72CXJ is an 1 M word by 72-bit Synchronous

KM44C1000C

Contextual Info: KM44C1OOOC/CL/CSL CMOS DRAM 1M x4B it CMOS Dynamic RAM with Fast Page Mode FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM44C1000C/CUCSL is a high speed C M O S 1,0 4 8 ,5 7 6 x 4 D yn a m ic R and om A cce ss Memory. Its design is optimized for high performance

Contextual Info: - ¡-a,.— - - . . -^r- r P.-.- .» ^ y v o y a ir » ^ JT H M VTgy » > y * ¿1*M ‘g *-• » w i<4>»fcWW '• "► r w « m r « y .yn T - -' -.» ^n -,1u - ^ ¡T - . *• - •#••»«•. ._ fj».rr^ ' ^ ¡ . . T - ^ . ^ w . r P f « - , . . - . . . , : - , w - -,*r — :-

KMM377S2857AT2-GH

Abstract: KMM377S2857AT2-GL
Contextual Info: Preliminary KMM377S2857AT2 SDRAM MODULE K M M 377S2857AT2 SDRAM DIMM Intel 1.1 ver. Base 128M x72 SDR AM DIMM w ith PLL & R egister based on Stacked 128Mx4, 4B anks 8K Ref., 3.3V S D R A M s w ith SPD GENERAL DESCRIPTION FEATURE T he Sam sung KM M 377S2857AT2 is a 128M bit x 72 S yn ­

L 0814

Abstract: MRF917T1
Contextual Info: M O TO R O LA O rder this docum ent from RF Marketing SEMICONDUCTOR TECHNICAL DATA The RF Small Signal Line MRF917T1 NPN Silicon High-Frequency Transistors D esigned fo r low n o ise , w ide d yn a m ic range fro n t end a m p lifie rs , at frequencies to 1.5 GHz. Specifically aimed at portable communication devices

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-422000LAB72F 3.3 V OPERATION 2 M-WORD BY 72-BIT DYNAMIC RAM MODULE FAST PAGE MODE ECC Description The MC-422000LAB72F is a 2,097,152 w o rd s by 72 bits d yn a m ic RAM m o d u le on w h ic h 9 pieces o f 16 M DRAM: jUPD4217800L are assem bled.

42S18160

Abstract: NEC 4216160
Contextual Info: M O S INTEGRATED CIRCU IT juPD42S16160,4216160,42S18160,4218160 16 M BIT DYNAM IC RAM 1 M-WORD BY 16-BIT, FA ST PAGE M ODE, B YTE REA D /W RITE M ODE DESCRIPTION T h e /IPD 42S16160, 4216160, 42S1816 0, 4218160 are 1 048 576 w o rd s b y 16 bits d yn a m ic C M O S R A M s.

Contextual Info: Communication ICs DTMF receiver for telephones BU8871F The BU8871F is a DTMF receiver ICs developed for use in telephone answering machines, and converts 16 different typ e s o f DTM F sig nals into 4 -b it binary serial data. It fea tu res a w id e d yn a m ic range, e lim ina ting th e need fo r an

Contextual Info: KMM372F800CK KMM372F81OCK DRAM MODULE KMM372F800CK / KMM372F810CK Fast Page with EDO Mode 8M X 72 DRAM DIMM with ECC using 4Mx4, 4K/2K Refresh, 3.3V GENERAL DESCRIPTION FEATURES T h e S a m su n g K M M 372F 80 1 0C K is a 8 M x7 2 b its D yn a m ic • P art Ide ntifica tio n

M514400C

Abstract: M514400 m5144 HM514400C HM514400CL Hitachi Scans-001
Contextual Info: HM514400C/CL Series 1,048,576-word x 4-bit D yn am ic Random A c c e s s Memory HITACHI The H itachi H M 514400C is a CM OS dynam ic R A M o rg a n iz e d 1 ,0 4 8 ,5 7 6 -w ord x 4 -b it. HM 514400C has realized higher density, higher performance and various functions by employing

msm82c51a-2rs

Abstract: MSM82C51 MSM82C51A
Contextual Info: OKI semiconductor MSM82C51A-2RS/GS/JS_ UNIVERSAL SYNCHRONOUS ASYNCHRONOUS RECEIVER TRANSMITTER GENERAL DESCRIPTION The M S M 8 2 C 5 1 A is a USART U niversal S yn ch ro n o u s A s y n c h ro n o u s Receiver T ra n s m itte r fo r serial data c o m m u n ic a tio n .

4cmv

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT MC-454BA80 4M-W ORD BY 80-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE Description The M C -4 54B A 80 is a 4 ,1 9 4 ,3 0 4 w o rd s by 80 b its syn ch ro n o u s d yn a m ic RAM m odule on w hich 20 p ie ce s of 16 M

CD4001A

Abstract: TP4301A rca to rca schematic PEG 122 plug-in replacement
Contextual Info: TYPES TF4301A. TP4301A QUAD 2-INPUT NOR BUFFERS CMOS LOGIC C IRCU ITS S E P T E M B E R 1475 Buffer C ircu it Designed to be Plug-In Replacem ent for R C A C D 4 0 0 1 A JO H N D U A L IN - L IN E P A C K A G E T O P V IE W Im proved S ta tic and D yn am ic Of*»

Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT MC-4516DA72 16 M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE REGISTERED TYPE Description T he M C -4 516 D A 7 2 is a 16 ,7 7 7 ,2 1 6 w o rd s by 72 bits syn ch ro n o u s d yn a m ic RAM m odule on w h ich 18 pieces o f 64M

Contextual Info: m in airy S p e c . MITSUBISHI LSls MH2V72CZJ-6,-7 Some of contents are subject to change without notice. _FAST PAGE MODE 150994944-BIT 2097152-BIT BY 72-BIT DINAMIC RAM PIN CONFIGURATION DESCRIPTION T he M H 2 V 7 2 C Z J is 2 0 9 7 1 5 2 -w ord x 7 2 -b it d yn a m ic ram

4500B AA

Contextual Info: 7. COMMON ELECTRICAL CHARACTERISTICS 7 -1 P o w e r D is s ip a tio n The power dissipation of CMOS device is com posed of two components: one static, the other dynam ic. The total power dissipation is the sum of static and d yn am ic power dissipation. Static power dissipation is obtained by m ultiplyin g quiescent supply current by the supply voltage

Contextual Info: Preliminary Spec. MITSUBISHI LSIs MH16V725BATJ -5, -6 _ HYPER PAGE MODE 1207959552 - BIT 16777216 - WORD BY 72 - BIT DYNAMIC RAM DESCRIPTION PIN CONFIGURATION T he M H 1 6V 7 25B A T J is 16 777216-w o rd x 7 2 -bit d yn am ic ram m odule. T his co n sist o f eigh te en in du stry sta n d a rd 16M

Contextual Info: DRAM MODULE KMM372V404BS KMM372V404BS Fast Page Mode 4M x 72 DRAM DIMM with ECC Using 4Mx16 & 4Mx4 , 4K Refresh, 3.3V GENERAL DESCRIPTION FEATURES T he S am sung K M M 37 2V 4 04 B is a 4 M x7 2 b its D yn am ic RAM Part Identification high d e n sity m em ory m odule. The S am sung K M M 37 2V 4 04 B