marking yw
Abstract: MMBTA93 YW marking MARKING yw SOT23
Text: SEMICONDUCTOR MMBTA93 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking YW No. 1 Item Marking Device Mark YW MMBTA93 hFE Grade - - * Lot No. 01 2 Description 1998. 1st Week [ 0: 1st Character, 1: 2nd Character] [Note] * Lot No. marking method
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MMBTA93
OT-23
marking yw
MMBTA93
YW marking
MARKING yw SOT23
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E2791
Abstract: No abstract text available
Text: E2791/E2791LF GR-1244 and GR-253-Core Stratum 3 Minature Surface Mount TCXO Marking laser • Manufacturers ID (CMAC) ■ Manufacturers identifier (xx) ■ Pad 1 / Static Sensitivity Identifier (∆) ■ Abbreviated Part Number (2791) ■ Oscillator’s Date of Manufacture (YW)
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E2791/E2791LF
GR-1244
GR-253-Core
28ppm
32ppm
wil100
E2791
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marking yw
Abstract: 9632 transistor 9632 transistor marking 6c 95060
Text: Part Marking Information Vishay High Power Products FlipKY 0.5 A/0.75 A Part number Lot number Ball 1 location mark Y L YW Workweek Year PART NUMBER MARKING FCSP0530TR D FCSP0530ETR C FCSP05H40TR F FCSP05H40ETR E FCSP0730TR Y FCSP07H40TR W TABLE 1 W = 1 TO 26 IF PRECEDED
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FCSP0530TR
FCSP0530ETR
FCSP05H40TR
FCSP05H40ETR
FCSP0730TR
FCSP07H40TR
23-Apr-09
marking yw
9632 transistor
9632
transistor marking 6c
95060
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E3179
Abstract: E3179LF
Text: E3179/E3179LF GR-1244 and GR-253 Core Stratum 3 Minature Surface Mount TCXO ISSUE 4 ; 19 MARCH 2009 Marking Nominal Frequency, Fo • 20.0MHz ■ ■ ■ Supply Voltage ■ 3.3V ±5% ■ ■ R X XX ∆3179 YW Input Current ■ < 6mA Output ■ Type : HCMOS
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E3179/E3179LF
GR-1244
GR-253
28ppm
32ppm
-85dBc/Hz
100Hz
-110dBc/Hz
-125dBc/Hz
E3179
E3179LF
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E3179
Abstract: No abstract text available
Text: E3179/E3179LF GR-1244 and GR-253 Core Stratum 3 Minature Surface Mount TCXO ISSUE 3 ; 13 JUNE 2005 Marking Nominal Frequency, Fo • 20.0MHz ■ ■ ■ Supply Voltage ■ 3.3V ±5% ■ ■ Input Current ■ < 6mA CMAC xx ∆3179 YW Output ■ Type : HCMOS
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E3179/E3179LF
GR-1244
GR-253
28ppm
32ppm
-85dBc/Hz
100Hz
-110dBc/Hz
0125dBc/Hz
E3179
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9632 transistor
Abstract: SPN MARKING FCSP140 marking yw transistor marking 6c FCSP1H40LTR YW marking FCSP240 4 LETTER mark code 95281
Text: Part Marking Information Vishay High Power Products FlipKY 1.0 A/1.5 A Ball 1 location mark U Part number L YW Lot number Workweek Year PART NUMBER MARKING FCSP130LTR U FCSP140LTR N FCSP1H40LTR M FCSP230LTR R FCSP240LTR S FCSP2H40LTR T TABLE 1 W = 1 TO 26 IF PRECEDED
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FCSP130LTR
FCSP140LTR
FCSP1H40LTR
FCSP230LTR
FCSP240LTR
FCSP2H40LTR
23-Apr-09
9632 transistor
SPN MARKING
FCSP140
marking yw
transistor marking 6c
FCSP1H40LTR
YW marking
FCSP240
4 LETTER mark code
95281
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tjm sot23
Abstract: sss0610
Text: SSS0610 P-Channel Enhancement Mode MOSFET Product Summary ID A -60V -0.185A RDS(ON) ( ) Max 10 06 VDS (V) SOT-23 D YW 7.5 @VGS = 10V G 10.0 @VGS = 4.5V S D FEATURES Super high density cell design for low RDS(ON). Rugged and reliable. G SOT-23 package. Pb Free.
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SSS0610
OT-23
OT-23
tjm sot23
sss0610
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marking code YW DIODE
Abstract: No abstract text available
Text: SSN0610A P-Channel Enhancement Mode MOSFET Product Summary VDS V SOT-323 RDS(ON) (ħ) Max ID (A) D 0A YW 7.5 @VGS = 10V -0.13A -60V G 10.0 @VGS = 4.5V S D FEATURES ȟ!Super high dense cell design for low RDS(ON). ȟ!Rugged and reliable. G ȟ!SOT-323 package.
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SSN0610A
OT-323
OT-323
marking code YW DIODE
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AD3A
Abstract: No abstract text available
Text: SSN2302A N-Channel Enhancement Mode MOSFET Product Summary VDS V SOT-323 RDS(ON) (mħ) Max ID (A) D 3A YW 85 @VGS = 4.5V 20V 2.8A G 115 @VGS = 2.5V S D FEATURES ȟ!Super high dense cell design for low RDS(ON). ȟ!Rugged and reliable. G ȟ!SOT-323 package.
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SSN2302A
OT-323
OT-323
AD3A
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8205 sot-23-6
Abstract: Dual N-Channel MOSFET 8205 8205 A mosfet SSS8205 8205 dual mosfet 8205 mosfet 8205 sot 23-6 8205 A 8205 datasheet 8205
Text: SSS8205 Dual N-Channel Enhancement Mode MOSFET Product Summary ID A RDS(ON) (m ) Max 05 YW 25 @VGS = 4.5V 5A 18V 82 VDS (V) TSOP-6 (SOT-23-6) 1 45 @VGS = 2.5V D1 (2, 5) D2 (2, 5) FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable.
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SSS8205
OT-23-6)
8205 sot-23-6
Dual N-Channel MOSFET 8205
8205 A mosfet
SSS8205
8205 dual mosfet
8205 mosfet
8205 sot 23-6
8205 A
8205 datasheet
8205
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mosfet vth 5v
Abstract: Dual N-Channel MOSFET sot-363 n-channel mosfet SSN2N7002C Dual Enhancement Mode MOSFET
Text: SSN2N7002C Dual Enhancement Mode MOSFET Product Summary N-Channel VDS (V) SOT-363 RDS(ON) (Ω) Max 6 3.0 @VGS = 10V 0.120A 1 Product Summary (P-Channel) ID (A) -60V -0.130A 4 YW 4.0 @VGS = 4.5V VDS (V) 5 2C 60V ID (A) 2 3 RDS(ON) (Ω) Max D1 (6) 7.5 @VGS = 10V
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SSN2N7002C
OT-363
OT-363
mosfet vth 5v
Dual N-Channel MOSFET
sot-363 n-channel mosfet
SSN2N7002C
Dual Enhancement Mode MOSFET
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marking 8206
Abstract: RT 8206 sot-23-6 marking code "MARKING CODE G2" MARKING CODE G2
Text: SSS8206 Dual N-Channel Enhancement Mode MOSFET Product Summary ID A RDS(ON) (m ) Max 06 YW 20 @VGS = 4.5V 5.5A 16V 82 VDS (V) TSOP-6 (SOT-23-6) 1 35 @VGS = 2.5V D1 (2, 5) D2 (2, 5) FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable.
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SSS8206
OT-23-6)
marking 8206
RT 8206
sot-23-6 marking code
"MARKING CODE G2"
MARKING CODE G2
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Dual N P-Channel mosfet sot-363
Abstract: marking code YW DIODE sot-363 n-channel mosfet 3D16 sot363-6
Text: SSN0610B Dual P-Channel Enhancement Mode MOSFET Product Summary VDS V SOT-363 6 RDS(ON) (ħ) Max ID (A) 0B 4 YW 7.5 @VGS = 10V -60V 5 -0.130A 1 10.0 @VGS = 4.5V 2 3 D2 (3) D1 (6) FEATURES ȟ!Super high dense cell design for low RDS(ON). ȟ!Rugged and reliable.
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SSN0610B
OT-363
OT-363
Dual N P-Channel mosfet sot-363
marking code YW DIODE
sot-363 n-channel mosfet
3D16
sot363-6
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Dual N-Channel mosfet sot-363
Abstract: diode 66a SSN1902 sot-363 n-channel mosfet 66a Diodes Dual N-Channel MOSFET
Text: SSN1902 Dual N-Channel Enhancement Mode MOSFET Product Summary SOT-363 6 RDS ON (mΩ) Max ID (A) 4 YW 385 @VGS = 4.5V 1 0.7A 20V 5 19 VDS (V) 2 630 @VGS = 2.5V 3 D1 (6) D2 (3) FEATURES ◆ Super high dense cell design for low RDS(ON). ◆ Rugged and reliable.
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SSN1902
OT-363
OT-363
Code19
Dual N-Channel mosfet sot-363
diode 66a
SSN1902
sot-363 n-channel mosfet
66a Diodes
Dual N-Channel MOSFET
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c-mac
Abstract: No abstract text available
Text: GR-1244 and GR-253-Core Stratum 3 Minature Surface Mount TCXO ISSUE 1 ; 24 MARCH 2004 Nominal Frequency, Fo • 20.0MHz Supply Voltage ■ 3.3V ±5% Marking laser ■ Manufacturers ID (CMAC) ■ Manufacturers identifier (xx) ■ Pad 1 / Static Sensitivity Identifier (∆)
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E2791
GR-1244
GR-253-Core
28ppm
32ppm
-85dBc/Hz
100Hz
-110dBc/Hz
-125dBc/Hz
10kHz
c-mac
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Untitled
Abstract: No abstract text available
Text: E2791 Stratum 3 Miniature Surface Mount TCXO Nominal Frequency, Fo • 20.0MHz Supply Voltage ■ 3.3V ±5% Marking ■ Manufacturers ID CMAC ■ Manufacturers identifier (xx) ■ Pad 1 / Static Sensitivity Identifier (∆) ■ Abbreviated Part Number (2791)
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E2791
28ppm
32ppm
10-60Hz
980ms-2
MIL-STD-202,
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CHN 920
Abstract: CHN 628 9426 circuit diagram of plcc modem CT31 NS16450 NS16C552 NS16C552V
Text: NS16C552 yw\National JimSemiconductor NS16C552 Dual Universal Asynchronous Receiver/Transmitter with FIFOst General Description F e a tu re s The NS16C552 is a dual version of the NS16550AF Univer sal Asynchronous Receiver/Transmitter UART . The two serial channels are completely independent except for a
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NS16C552
NS16550AF
NS16450*
NSt6C552XX
tl/c/9426-20
CHN 920
CHN 628
9426
circuit diagram of plcc modem
CT31
NS16450
NS16C552V
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Untitled
Abstract: No abstract text available
Text: Part Marking EXAMPLE: THIS IS AN IRF7501 LOT CODE XX PAR T NUMBER WW = DATE CODE EXAMPLES: YWW = 9 5 0 3 = 5C YWW = 9 5 3 2 = EF ^ DATE CODE (YW) Y = YEAR W = WEEK = ( 1 - 2 6 ) IF PRECEDED B Y LA ST DIGIT OF CALENDAR YEAR YEAR Y 2001 2 00 2 200J 1994 1995
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IRF7501
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Untitled
Abstract: No abstract text available
Text: /yw&n TECHNOLOGY LT1229/LT1230 Dual and Quad lOOMHz Current Feedback Amplifiers F€ATUR€S DCSCRIPTIOn • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ The LT1229 and LT1230 dual and quad 100MHz current feedback amplifiers are designed for maximum perfor mance in small packages. Using industry standard
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LT1229/LT1230
LT1229
LT1230
100MHz
14-pin
000V/ps
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Untitled
Abstract: No abstract text available
Text: A COMPANY V J06 12 C eram ic C a p a cito rs OF yw#0* M onolithic Chips, Low Inductance FEATURES • Low inductance, typically half the inductance of standard product • R educes A C noise in multi-chip modules MCM • Low profile, robust device for easy mounting
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VJ0612
0612Y823KXA
TG055GT
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Untitled
Abstract: No abstract text available
Text: S M B Y W 0 4 -2 0 0 B YW 4200B _ HIGH EFFICIEN CY FAST RECO VERY DIODE MAIN PRODUCT CHARACTERISTICS I f a v 4A V rrm 200 V V f (max) 0.85 V Tj (max) 150 °C FEATURES AND BENEFITS • ■ ■ ■ ■ SUITED TO SMPS AND DRIVES SURFACE MOUNT PACKAGE
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4200B
BYW4200B
DO-214AB)
SMBYW04-200
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resistor 100 ohms 250W
Abstract: No abstract text available
Text: Ço b5°iï° Planar Power Resistor • YW ÎJII PPR SERIES • 2 5 0 w a tts po w er dissipation a t 100°C • 1000 w atts overload for 10 secs at 70°C • High p o w er to size ratio • Low inductance design • Easily m ounted to heat sink Electrical Data
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PPR250
PPR250H
resistor 100 ohms 250W
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Untitled
Abstract: No abstract text available
Text: r n THIS bfeuwC IS UNftJBUSHEb. COPTRCHT - _ BY TYCO RELEASED FM PtAUMIM WST ALL RIGHTS H6S6RV60. M R E V IS IO N S 22 B 12DEC2008 REV P E R ECO — 0 8 — 0 3 1 9 1 2 VL LR MECHANICAL: A 5-6610166-1 Y YW W Mag45 tm CHINA A MATERIALS: - HOUSING - THERMOPLASTIC PET POLYESTER FLAMMABILITY RATING UL 94V-0.
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H6S6RV60.
12DEC2008
Mag45
C26800
100jalNCH
1/16W
16MAR2005
18MAR2005
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Untitled
Abstract: No abstract text available
Text: i t or In port. Por fnonufo^im or to ll kw onom^oEn^ttini A OwniwMBn nN m ri In prior oonow t * that no right In g n M « or t» yw ooy IrriWmoBon In thlo rioow nw i TOLERANCE + / - 0 . 0 3 Customer drawing 4 3 T 2 _ 1_ REVISIONS SVM D E S C R IP T IO N
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H/M6/09
L77TW
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