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"Indicator Lamps"

Abstract: 85122 LED water level indicator using 4 led LED NIGHT LAMP CIRCUIT Indicator Lamps mil grade LED lamps Oxley Group str 1229 2STR/LH23 night vision led
Contextual Info: LED Characteristics Product Selection Chart z OXL/MIL50/- 5.0 67 z z z z z z OXL/CLH/63/- 6.35 66 z z z OXL/CLH/63/P/- 6.35 66 z z z PS/LH/8/- 8.0 68 z z z z STR/LH/8/- 8.0 68 z z z z z STR/5/LH/8/- 8.0 68 z STR/501/LH/8/- 8.0 68 z STR/NLH/- 8.0 68 OXL/CLH/80/-

crystal 27 hc52

Abstract: QUARTZ hc52 71-XX
Contextual Info: HC-52/U Quartz Crystal Units AT-Cut, 5 - 300 MHz Options Package Height: 8.0 3.8 X HC - 5 2 / U: 8.8 HC - 5 2 / 8 mm: 8.0 HC - 5 2 / 6 mm: 6.0 Z Y 7.0 Y 2.3 2.3 2.3 Z 3.3 3.3 3.3 Adder to PartNr. XS 71xxA XS 71xxB HC - 5 2 / 6 mm: starting with 15MHz X DIN 45110:

k2952

Abstract: 2SK2952
Contextual Info: 2SK2952 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2952 Unit: mm Chopper Regulator Applications z Low drain−source ON resistance : RDS (ON) = 0.4 Ω (typ.) z High forward transfer admittance : |Yfs| = 8.0 S (typ.) z Low leakage current

Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum impedance 70 MHz Rated current ΔT = 40K DC Resistance Value Unit Tol. Z 565 Ω ±25% Z 5000 Ω typ. IR 8.0 A max. RDC

Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum impedance 70 MHz Rated current ΔT = 40K DC Resistance Value Unit Tol. Z 565 Ω ±25% Z 5000 Ω typ. IR 8.0 A max. RDC

Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum impedance 70 MHz Rated current ΔT = 40K DC Resistance Value Unit Tol. Z 565 Ω ±25% Z 5000 Ω typ. IR 8.0 A max. RDC

Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum impedance 70 MHz Rated current ΔT = 40K DC Resistance Value Unit Tol. Z 565 Ω ±25% Z 5000 Ω typ. IR 8.0 A max. RDC

Contextual Info: A Dimensions: [mm] B Recommended land pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum impedance 70 MHz Rated current ΔT = 40K DC Resistance Value Unit Tol. Z 565 Ω ±25% Z 5000 Ω typ. IR 8.0 A max. RDC

Contextual Info: A Dimensions: [mm] B Land Pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum Impedance 70 MHz Rated Current ΔT = 40K DC Resistance Value Unit Tol. Z 565 Ω ±25% Z 5000 Ω typ. IR 8.0 A max. RDC 0.012 Ω

E E Elektronik GmbH

Contextual Info: A Dimensions: [mm] B Land Pattern: [mm] D Electrical Properties: Properties Test conditions Impedance @ 100 MHz 100 MHz Maximum Impedance 70 MHz Rated Current ΔT = 40K DC Resistance Value Unit Tol. Z 565 Ω ±25% Z 5000 Ω typ. IR 8.0 A max. RDC 0.012 Ω

k2952

Contextual Info: 2SK2952 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2952 Chopper Regulator Applications Unit: mm z Low drain−source ON resistance : RDS (ON) = 0.4 Ω (typ.) z High forward transfer admittance : |Yfs| = 8.0 S (typ.) z Low leakage current : IDSS = 100 µA (max) (VDS = 400 V)

Contextual Info: CSM -9 Low profile 8.0 x 4.5 mm Footprint Extended Temp Range Option RoHS Compliant SM D QU ART Z CRY ST AL The CSM-9 is a compact SMD Crystal. The 8.0 x 4.5 x 1.8 mm ceramic package is ideal for today's SMD manufacturing environment. OPERATING CONDITIONS / ELECTRICAL CHARACTERISTICS

HA 12058

Abstract: TRANSISTOR CD 2897 L22A HA 3089 ic 7492 series TRANSISTOR 2SC 458 2SC 968 NPN Transistor
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT - 10 G H z • LOW NOISE FIGURE: 1.7 dB at 2 G H z 2.6 dB at 4 G H z • HIGH ASSOCIATED GAIN: 12.5 dB at 2 G H z 8.0 dB at 4 G H z • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE

k2845

Contextual Info: 2SK2845 TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type π−MOSIII 2SK2845 Unit: mm Chopper Regulator, DC/DC Converter and Motor Drive Applications z Low drain−source ON-resistance : RDS (ON) = 8.0 Ω (typ.) z High forward transfer admittance

K2841

Abstract: 2-10P1B 2SK2841
Contextual Info: 2SK2841 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2841 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.4 Ω (typ.) z High forward transfer admittance : |Yfs| = 8.0 S (typ.)

Contextual Info: 2SK2841 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2841 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.4 Ω (typ.) z High forward transfer admittance : |Yfs| = 8.0 S (typ.)

Contextual Info: 2SK2733 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2733 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 8.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 0.9 S (typ.)

2-10P1B

Abstract: 2SK2733 K2733
Contextual Info: 2SK2733 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2733 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 8.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 0.9 S (typ.)

K2733

Abstract: 2-10P1B 2SK2733
Contextual Info: 2SK2733 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSIII 2SK2733 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 8.0 Ω (typ.) z High forward transfer admittance : |Yfs| = 0.9 S (typ.)

2-10P1B

Abstract: 2SK2841 K2841
Contextual Info: 2SK2841 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2841 Chopper Regulator, DC−DC Converter and Motor Drive Applications z Low drain−source ON resistance : RDS (ON) = 0.4 Ω (typ.) z High forward transfer admittance : |Yfs| = 8.0 S (typ.)

Cree SiC MOSFET

Contextual Info: CAS300M17BM2 1.7kV, 8.0 mΩ All-Silicon Carbide Half-Bridge Module C2M MOSFET and Z-Rec Diode 1.7 kV RDS on 8.0 mΩ Esw, Total @ 300A, 150 ˚C Features • • • • • • • VDS Package 23.7 mJ 62mm x 106mm x 30mm Ultra Low Loss High-Frequency Operation

ixzr08n120a

Contextual Info: IXZR08N120 & IXZR08N120A/B Z-MOS RF Power MOSFET N-Channel Enhancement Mode Switch Mode RF MOSFET Low Capacitance Z-MOSTM MOSFET Process Optimized for RF Operation Ideal for Class C, D, & E Applications VDSS = 1200 V ID25 = 8.0 A Symbol Test Conditions RDS on

MS6511

Abstract: MS5151 Microwave detector diodes 18 GHz Microwave detector diodes MS5121 MS5531 MS5221 MS5211 MS5321 MS6111
Contextual Info: 65 SCHOTTKY DIODES PART NUMBER 4 z |F fi NF (db) TEST F R EQ UENC Y VSWR MICROWAVE M IXER DIODES MS5111 MS5121 MS5131 8.0 7.5 7.0 150 300 150-300 150-300 2.3:1 2.3:1 2.0:1 MS5141 MS5151 MS5211 6.5 6.0 8.0 150-300 150-300 150 300 1.8:1 1.5:1 2.3:1 MS5221

2SK2493

Abstract: K2493
Contextual Info: 2SK2493 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type π−MOSV 2SK2493 Chopper Regulator and DC−DC Converter Applications Unit: mm 1.5 ± 0.2 6.5 ± 0.2 : |Yfs| = 8.0 S (typ.) z Low leakage current : IDSS = 100 A (max) (VDS = 16 V) z Enhancement mode