Z-44 MOSFET Search Results

Z-44 MOSFET Result Highlights (5)

Part	Manufacturer	Description
TCK401G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing / Auto-discharge, WCSP6E
TCK425G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK423G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK420G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G
TCK422G	Toshiba Electronic Devices & Storage Corporation	MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G

Z-44 MOSFET Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
44P15T Contextual Info: IXTA44P15T IXTP44P15T IXTQ44P15T IXTH44P15T TrenchPTM Power MOSFET P-Channel Enhancement Mode Avalanche Rated TO-263 AA IXTA VDSS ID25 RDS(on) TO-220AB (IXTP) G D S G DS S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 150 V VDGR	Original	O-263 O-220AB IXTA44P15T IXTP44P15T IXTQ44P15T IXTH44P15T O-247 44P15T	PDF
transistor power rating 5w Abstract: DU2805S transistor Pout 5W B62152A Contextual Info: e ec=.- = :-=s = = = -r-= =z r = an AMP company RF MOSFET 2 - 175 MHz Power Transistor, 5W, 28V DU2805S v2.00 Features l l l l l N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Koise Figure Than Bipolar Devices	Original	DU2805S 918OpF B62152-AOOOl-X001 transistor power rating 5w DU2805S transistor Pout 5W B62152A	PDF
IXTA44P15T Contextual Info: IXTA44P15T IXTP44P15T IXTQ44P15T IXTH44P15T TrenchPTM Power MOSFETs P-Channel Enhancement Mode Avalanche Rated TO-263 AA IXTA VDSS ID25 RDS(on) TO-220AB (IXTP) G D S G DS S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 150 V	Original	IXTA44P15T IXTP44P15T IXTQ44P15T IXTH44P15T O-263 O-220AB IXTA44P15T IXTQ44P15T	PDF
44N80 Contextual Info: HiPerFETTM Power MOSFETs ISOPLUS264TM IXFL 44N80 Electrically Isolated Backside VDSS = 800 V ID25 = 44 A RDS(on) = 0.165 Ω Single Die MOSFET N-Channel Enhancement Mode Avalanche Rated, High dv/dt, Low trr Preliminary Data Sheet Symbol Test Conditions Maximum Ratings	Original	ISOPLUS264TM 44N80 728B1 123B1 728B1 065B1 44N80	PDF
25 ohm semirigid Abstract: capacitor 50uf UF2840G resistor 1.2k capacitor J 400 Contextual Info: -3= - -0-z =z 32 -z= .-me- an AMP company * = = RF MOSFET Power 100 - 500 MHz Transistor, 4OW, 28V UF2840G v2.00 Features l N-Channel Enhancement l DMOS Structure l Lower Capacitances Mode Device for Broadband Operation l High Saturated Output Power l	Original	UF2840G 1000pF t-500pF 25 ohm semirigid capacitor 50uf UF2840G resistor 1.2k capacitor J 400	PDF
equivalent transistor c 243 Abstract: lf2805a 1000 MHz transistor 5W Contextual Info: A fikQ m w an A M P com pany RF MOSFET Power Transistor, 5W, 28V 500 -1000 MHz LF2805A V2.00 Features • • • • • • N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower Noise Floor	OCR Scan	LF2805A equivalent transistor c 243 lf2805a 1000 MHz transistor 5W	PDF
44P15T Abstract: IXTP44P15T ixta44p15t IXTA44 IXTP44 TO-3P weight Contextual Info: Preliminary Technical Information TrenchPTM Power MOSFET IXTA44P15T IXTP44P15T IXTQ44P15T IXTH44P15T P-Channel Enhancement Mode Avalanche Rated - 150V - 44A Ω 65mΩ TO-3P IXTQ S (TAB) G D S G (TAB) Symbol Test Conditions VDSS TJ = 25°C to 150°C - 150	Original	IXTA44P15T IXTP44P15T IXTQ44P15T IXTH44P15T O-220 O-263 IXTA44P15T IXTQ44P15T 44P15T IXTP44P15T IXTA44 IXTP44 TO-3P weight	PDF
transistor v2w Abstract: transistor C 2240 TRANSISTOR 500 PL031 TT 2240 Contextual Info: =z -z-= = =- * =s .- -a a-= = = an AMP company RF MOSFET Power Transistor, 500 - 1000 MHz IOW, 28V LF281 OA Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower Noise Floor	Original	LF281 rt-l-970' transistor v2w transistor C 2240 TRANSISTOR 500 PL031 TT 2240	PDF
equivalent transistor s2000 Abstract: transistor s2000 DU28200M DS20A DU28200 Contextual Info: an AMP company RF MOSFET Power Transistor, 2OOW, 28V 2 - 175 MHz DU28200M v2.00 Features P&-4 I N-Channel Enhancemenr Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices	Original	DU28200M equivalent transistor s2000 transistor s2000 DU28200M DS20A DU28200	PDF
kd 506 transistor Abstract: transistor M 839 DU2880U Contextual Info: A tfN m an AMP com pany RF MOSFET Power Transistor, 80W, 28V 2 - 1 7 5 MHz DU2880U Features • • • • • N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices	OCR Scan	DU2880U kd 506 transistor transistor M 839 DU2880U	PDF
UF2815OJ Contextual Info: = an AMP =c= =z company = = RF MOSFET Power 100 - 500 MHz Transistor, 15OW, 28V UF2815OJ Features N-Channel Enhancement DMOS Structure Lower Capacitances Common Mode Device for Broadband Operation Source Configuration Lower Noise Floor Absolute Maximum Ratings at 25°C	Original	UF2815OJ -65to UF2815OJ	PDF
transistor t2a Abstract: U 318 m t2a transistor UF2820P Contextual Info: M an A M P com pany RF MOSFET Power Transistor, 20W, 28V 100 -500 MHz UF2820P V2.00 Features • • • • • N-Channel Enhancem ent Mode Device DMOS Structure I.ower Capacitances for Broadband O peration Com m on Source C onfiguration Lower Noise Floor	OCR Scan	UF2820P transistor t2a U 318 m t2a transistor UF2820P	PDF
Transistor Equivalent list Abstract: transistor A5G "RF MOSFET" DU2860U 300 Amp mosfet resistor 300 ohms equivalent transistor rf mosfet 800 v DU2860 Contextual Info: s2zz-f rgy= e -A5g =r- -=- an AMP company RF MOSFET 2 - 175 MHz Power Transistor, 6OW, 28V DU2860U v2.00 Features A 4Gl. N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices	Original	DU2860U 9-18OpF Transistor Equivalent list transistor A5G "RF MOSFET" DU2860U 300 Amp mosfet resistor 300 ohms equivalent transistor rf mosfet 800 v DU2860	PDF
20 amp MOSFET transistor Abstract: MOSFET POWER TRANSISTOR DU2880V Contextual Info: an AMP company RF MOSFET Power Transistor, 8OW, 28V 2 - 175 MHz DU2880V Features . N-Channel Enhancement Mode Device l DMOS Structure l Lower Capacitances for Broadband Operation l High Saturated Output Power l Lower Noise Figure Than Competitive Devices Absolute Maximum Ratings at 25°C	Original	DU2880V 5-j14 20 amp MOSFET transistor MOSFET POWER TRANSISTOR DU2880V	PDF

Transistor Equivalent list Abstract: "RF MOSFET" UF2805B b 595 transistor transistor power 5w Mosfet DF 50 duos Contextual Info: an AMP company RF MOSFET Power 100 - 500 MHz Transistor, 5W, 28V UF2805B A B E Features l N-Channel Enhancement l DUOS Structure l Lower Capacitances Mode Device for Broadband v2.00 Operation 0 Common Source Configuration l Lower Noise Floor l 100 MHz to 500 MHz Operation	Original	UF2805B 68Dpf 82Opf Transistor Equivalent list "RF MOSFET" UF2805B b 595 transistor transistor power 5w Mosfet DF 50 duos	PDF
Transistor Equivalent list Abstract: SEMCO 20 amp MOSFET transistor DU1260T Contextual Info: .-I -=c z an AMP company = RF MOSFET Power Transistor, 6OW, 12V 2 - 175 MHz DU1260T v2.00 Features N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices	Original	DU1260T DU12BOT Transistor Equivalent list SEMCO 20 amp MOSFET transistor DU1260T	PDF
DU1230S Abstract: arco TRIMMER capacitor SEMCO Contextual Info: A te m m a n A M P com pany RF MOSFET Power Transistor, 30W, 12V 2 -175 MHz DU1230S V2.00 Features • • • • • • N-Channel Enhancem ent Mode Device DMOS Structure Lower Capacitances for Broadband O peration High Saturated O utput Power Lower Noise Figure Than Bipolar Devices	OCR Scan	DU1230S 5-80pF 4-40pF 1000pF DU1230S arco TRIMMER capacitor SEMCO	PDF
3F TRANSISTOR Abstract: F2801 Contextual Info: XY an AMP company r = RF MOSFET Power Transistor, 100 - 500 MHz 1 W, 28V UF2801 KI v2.00 Features l N-Channel Enhancement Mode Device l DMOS Structure Lower Capacitances l Lower Noise Floor l 100 MHz to 500 MHz Operation l Common Source TO39 Package Configuration	Original	UF2801 F2801 3F TRANSISTOR	PDF
IXTC180N085T Contextual Info: IXTC180N085T TrenchMVTM Power MOSFET VDSS ID25 RDS on = 85V = 110A Ω ≤ 6.1mΩ (Electrically Isolated Back) Surface) N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier ISOPLUS220 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 175°C	Original	IXTC180N085T ISOPLUS220 E153432 180N085T 03-04-09-D IXTC180N085T	PDF
capacitor 50uf Abstract: balun 50 ohm DU28200M transistor c s z 44 v Contextual Info: m an A M P com pany RF MOSFET Power Transistor, 200W, 28V 2 - 1 7 5 MHz DU28200M V2.00 Features • • • • • - A - N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices	OCR Scan	DU28200M 13PARTS 500pF 2700OHM DU28200M 1000pF capacitor 50uf balun 50 ohm transistor c s z 44 v	PDF
UF28156 Abstract: UF2815B L5 mosfet Contextual Info: = - EC an AMP company z = RF MOSFET Power Transistor, 15W, 28V 100 - 500 MHz UF28156 v2.00 Features l l l l l l N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation Common Source Configuration Lower -Noise Floor 100 MHz to 500 MHz Operation	Original	UF28156 270pf 82Opf lx28158 UF28156 UF2815B L5 mosfet	PDF
DU2860T Abstract: 22 pf trimmer capacitor Contextual Info: =zs.-E-= -=- * .-= - E an AMP company RF MOSFET 2 - 175 MHz Power Transistor, 6OW, 28V DU2860T v2.00 Features -*- N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices	Original	DU2860T 9-180pF DU2860T 22 pf trimmer capacitor	PDF
balun transformer 75 ohm Abstract: 300 ohms balun b 595 transistor CRC10 UF281OOH Contextual Info: RF MOSFET Power Transistor, iOOW, 28V 100 - 500 MHz UF281 OOH Features N-Channel Enhancement DMOS Structure Lower Capacitances Mode Device for Broadband Operation High Saturated Output Power Lower Noise Figure Than Competitive Devices Input Capacitance c IS	Original	UF281 3050152-W balun transformer 75 ohm 300 ohms balun b 595 transistor CRC10 UF281OOH	PDF
IXTP180N085T Abstract: IXTA180N085T Contextual Info: TrenchMVTM Power MOSFET IXTA180N085T IXTP180N085T VDSS ID25 RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 (IXTA) G Symbol Test Conditions VDSS TJ = 25°C to 175°C 85 V VDGR TJ = 25°C to 175°C, RGS = 1MΩ 85 V VGSM Transient	Original	IXTA180N085T IXTP180N085T O-263 180N085T 03-04-09-D IXTP180N085T IXTA180N085T	PDF

Z-44 MOSFET Search Results

Z-44 MOSFET Result Highlights (5)

Z-44 MOSFET Datasheets Context Search

44P15T

transistor power rating 5w

IXTA44P15T

44N80

25 ohm semirigid

equivalent transistor c 243

44P15T

transistor v2w

equivalent transistor s2000

kd 506 transistor

UF2815OJ

transistor t2a

Transistor Equivalent list

20 amp MOSFET transistor

Transistor Equivalent list

Transistor Equivalent list

DU1230S

3F TRANSISTOR

IXTC180N085T

capacitor 50uf

UF28156

DU2860T

balun transformer 75 ohm

IXTP180N085T