Z0 150 81 Search Results

Contextual Info: PETERMANN-TECHNIK GmbH Lechwiesenstr. 13 ∙ D-86899 ∙ Landsberg am Lech Tel: +49/8191/305395 ∙ Fax: +49/8191/305397 info@petermann-technik.com ∙ www.petermann-technik.com DIFFERATIAL LOW POWER SPREAD SPECTRUM OSCILLATOR 1.0—220.0 MHz SERIES „DLPSSO“

Contextual Info: PETERMANN-TECHNIK GmbH Lechwiesenstr. 13 ∙ D-86899 ∙ Landsberg am Lech Tel: +49/8191/305395 ∙ Fax: +49/8191/305397 info@petermann-technik.com ∙ www.petermann-technik.com HIGH PRECISION DIFFERENTIAL LP TC & VCTCXO SERIES „HFDTCVCTO“ HIGH PRECISION 220—625 MHz

DIFFERENTIAL LOW POWER TC & VCTCXO MHz

Contextual Info: PETERMANN-TECHNIK GmbH Lechwiesenstr. 13 ∙ D-86899 ∙ Landsberg am Lech Tel: +49/8191/305395 ∙ Fax: +49/8191/305397 info@petermann-technik.com ∙ www.petermann-technik.com DIFFERENTIAL LOW POWER TC & VCTCXO MHz SERIES „DTCVCTO“ 1.0—220 MHz FEATURES

HIGH PERFORMANCE DIFFERENTIAL OSCILLATOR

Contextual Info: PETERMANN-TECHNIK GmbH Lechwiesenstr. 13 ∙ D-86899 ∙ Landsberg am Lech Tel: +49/8191/305395 ∙ Fax: +49/8191/305397 info@petermann-technik.com ∙ www.petermann-technik.com HIGH PERFORMANCE DIFFERENTIAL OSCILLATOR SERIES „DLPO-4“ 220—625MHz FEATURES

HIGH PERFORMANCE DIFFERENTIAL OSCILLATOR

Contextual Info: PETERMANN-TECHNIK GmbH Lechwiesenstr. 13 ∙ D-86899 ∙ Landsberg am Lech Tel: +49/8191/305395 ∙ Fax: +49/8191/305397 info@petermann-technik.com ∙ www.petermann-technik.com HIGH PERFORMANCE DIFFERENTIAL OSCILLATOR SERIES „DLPO-3“ 1.0—220 MHz FEATURES

274 231

Abstract: 955 539 ic
Contextual Info: BFP 81 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features D Small feedback capacitance D Low noise figure D Very low cross modulation 2 3 1 4 94 9279 Marking: FA Plastic case SOT 143

transmission lines Twisted Pair spice model

Abstract: MMBD701 Twisted Pair split termination 100EP MBD301 MBD701 MC10EP16 MMBD301 diode z01
Contextual Info: AND8020/D Termination of ECL Devices with EF Emitter Follower OUTPUT Structure Prepared by: Paul Shockman ON Semiconductor Logic Applications Engineering http://onsemi.com APPLICATION NOTE CONTENTS OF APPLICATION NOTE Introduction − DC Termination Analysis

rsn 3305

Abstract: transmission lines Twisted Pair spice model MC10EP16 100EP 0.001 MF CAPACITOR AND8020
Contextual Info: AND8020/D Termination of ECL Logic Devices Prepared by: Paul Shockman ON Semiconductor Logic Applications Engineering http://onsemi.com APPLICATION NOTE CONTENTS OF APPLICATION NOTE Introduction – DC Termination Analysis Section 3. Thevenin Equivalent/Parallel Termination

temic 0675

Abstract: MARKING ra BFQ 540 application Telefunken 2360 telefunken ra 100 BFQ 244
Contextual Info: BFQ 81 TELEFUNKEN Semiconductors Silicon NPN Planar RF Transistor Applications RF amplifier up to 2 GHz, especially for mobile telephone. Features D Small feedback capacitance D Low noise figure D Low cross modulation 1 2 3 94 9280 Marking: RA Plastic case SOT 23

BFQ71

Abstract: Q62702-F775 bfq 96
Contextual Info: NPN Silicon RF Transistor BFQ 71 ● For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA. ● Hermetically sealed ceramic package. ● HiRel/Mil screening available. ● CECC-type available: CECC 50002/260.

VC-210FA

Abstract: HTG2121 tokin noise filter MR-2043 MA-2053 LF-315 GL-2060H1 335k 400v tokin noise filter MR-2021 mr-2043 LF-305
Contextual Info: Noise Filters Open Frame ME Series for Harmonic Distortion .274 Casing Type Metal box LF Series Small Current Type .275 LF Series Small Current Type with Screw

transmission lines Twisted Pair spice model

Abstract: Twisted Pair split termination MC10EP16 0.001 MF CAPACITOR
Contextual Info: AND8020/D Termination of ECL Logic Devices with EF Emitter Follower OUTPUT Structure http://onsemi.com Prepared by: Paul Shockman ON Semiconductor Logic Applications Engineering APPLICATION NOTE CONTENTS OF APPLICATION NOTE Introduction − DC Termination Analysis

RSN 3305

Abstract: transmission lines Twisted Pair spice model MMBD701 100EP MBD301 IC CD 4030 pin configuration reflection cofficient free circuit diagram of motherboard 945 ac 625 r 381 substitution AND8020
Contextual Info: AND8020/D Termination of ECL Logic Devices Prepared by: Paul Shockman ON Semiconductor Logic Applications Engineering http://onsemi.com APPLICATION NOTE CONTENTS OF APPLICATION NOTE Introduction – DC Termination Analysis Section 3. Thevenin Equivalent/Parallel

z0 150 81

Abstract: transistor s11 s12 s21 s22 Q62702-F774 bfq 85
Contextual Info: NPN Silicon RF Transistor BFQ 70 For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. ● Hermetically sealed ceramic package ● HiRel/Mil screening available. ● ESD: Electrostatic discharge sensitive device, observe handling precautions!

st ae gp 446

Abstract: AE GP 532 AE GP 531 ae gp 447 592/diode gp 421
Contextual Info: NPN Silicon RF Transistor BFQ 81 • For low -noise am plifiers up to 2 GHz and broadband analog and digital applications in telecom m unications system s at co lle cto r currents from 0.5 to 20 mA. £ C EC C -type available: CECC 50002/257. ESD: E lectrostatic discharge sensitive device, observe handling precautions!

MEA8020

Abstract: ACB1608 EPC17 BOBBIN ZCYS51R5-M3PA TCXO 9.9 MHZ CST063 QVC10 NLU160805 tdk Isolators ACL2520
Contextual Info: SM Components at a Glance Product name Type or Series Part No. Multilayer Ceramic Chip Capacitors C1005 [EIA CC0402] W T 1 0.5 0.55 max. Class I 0.5 to 330pF Class II 220 to 100000pF 1.6 0.8 0.9 max. Class I 0.5 to 1000pF Class II 220pF to 1jiF 2 1.25 1.45 max.

Transistor BFR 97

Abstract: Transistor BFR 37 Q62702-F1051 Transistor BFR 98
Contextual Info: NPN Silicon RF Transistor BFR 93P ● For low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA. ● CECC-type available: CECC 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking

BFQ 85

Abstract: RF NPN POWER TRANSISTOR 2.5 GHZ marking code 359 sot-23 Q62702-F659 BFQ29P z0 SOT23
Contextual Info: NPN Silicon RF Transistor BFQ 29P ● For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA. ● CECC-type available: CECC 50002/258. ESD: Electrostatic discharge sensitive device, observe handling precautions! Type

Transistor BFR

Abstract: Transistor BFR 39 Q62702-F1086 Transistor BFR 30 Transistor BFR 38 MARKING 93 BFR93A BFR93
Contextual Info: NPN Silicon RF Transistor BFR 93 A ● For low-distortion broadband amplifiers and oscillators up to 2 GHz at operating currents from 5 mA to 30 mA. ● CECC-type available: CECC 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions!

BFQ72

Abstract: Q62702-F776 s parameters transistor ac 151
Contextual Info: NPN Silicon RF Transistor BFQ 72 ● For low-distortion broadband amplifiers up to 2 GHz at collector currents from 10 mA to 30 mA. ● Hermetically sealed ceramic package. ● HiRel/Mil screening available. ● CECC-type available: CECC 50002/263. ESD: Electrostatic discharge sensitive device, observe handling precautions!

ac 0624 transistor 17-33

Abstract: transistor bfp 196 Q62702-F1282 0676 marking BFP193RCs 0166 415 04 1 060
Contextual Info: NPN Silicon RF Transistor BFP 193 ● For low-noise, high-gain amplifiers up to 2 GHz. ● For linear broadband amplifiers. ● Power amplifier for DECT and PCN systems ● fT = 8 GHz F = 1.2 dB at 800 MHz ESD: Electrostatic discharge sensitive device, observe handling precautions!

Transistor BFR 93

Abstract: Transistor BFR 30 BFR 30 transistor Transistor BFR 39 BFR93 Transistor BFR 135 bfr 49 transistor Transistor BFR Transistor BFR 80 Transistor BFR 35
Contextual Info: NPN Silicon RF Transistor BFR 93 A ● For low-distortion broadband amplifiers and oscillators up to 2 GHz at operating currents from 5 mA to 30 mA. ● CECC-type available: CECC 50002/256. ESD: Electrostatic discharge sensitive device, observe handling precautions!

Q62702-F788

Contextual Info: NPN Silicon RF Transistor BFQ 74 ● For low-noise amplifiers in the GHz range, and broadband analog and digital applications in telecommunications systems at collector currents from 1 mA to 25 mA. ● Hermetically sealed ceramic package. ● HiRel/Mil screening available.

xgold

Contextual Info: TVS Diodes Transient Voltage Suppressor Diodes ES D3 V3U 4 U L C Ultra Low Capacitance ESD Array ESD3V3U4ULC Data Sheet Revision 0.9, 2010-10-14 Preliminary Industrial and Multi-Market Edition 2010-10-14 Published by Infineon Technologies AG 81726 Munich, Germany