Z14 37 Search Results

XCS-Z11

Abstract: XCS-Z12 XCS-Z14 XCK P XCS-Z15 DE9-RA1012 XCS-Z200 DE9-RA1016 XCS TE XCS-Z13
Contextual Info: XCS TE www.schneider-electric.com Safety interlock switch Interrupteurs de sécurité Sicherheits-Positionsschalter Interruptores de seguridad Interruttori di sicurezza Interruptores de segurança XCS Z200 XCS TE XCS Z11 XCS Z12 XCS Z13 XCS Z14 XCS Z15 English

BZX84-3V3 z14

Abstract: c5v6 BZX84 bzx84-3v3 BZX84C BZX84-C27 c4v7 bzx843v3 c6v2
Contextual Info: Transys Electronics L I M I T E D BZX84C series SILICON PLANAR VOLTAGE REGULATOR DIODES PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = ANODE 2 = NC 3 = CATHODE 2 1 3 Marking BZX84–C3V3 = Z14 C3V6 = Z15 C3V9 = Z16 C4V3 = Z17 C4V7 = Zl

CEE2X56S-V3Z14

Abstract: EE2X92SC-VI2Z14 Framatome 211 pc burndy card edge 2,54 CEE2X91S-V11Z14 27Z14 54461 T8901 burndy CARD EDGE 14PTS
Contextual Info: CEE2X91S-V7Z14 CEE2X91S-VI1Z14 36 75 91 91 112 150 182 182 TABLE OF DIMENSIONS N& OF CONTACT PARS D E BAY A BAY B 11 45 .5 9 0 N4.991 Z39Q rSB.171 37 38 1.890 [4&011 1.940 [49.281 42 49 2.140 r5 4 J6 l 2.490 I83 45 1 42 49 2.140 rS 4 .3 6 l 2.490 f8 3 ¿ 5 l

D-97816 lohr

Abstract: rexroth HED 4 GDME 311 mannesmann rexroth Z15L24 RN181 rn181.04 D-97813 GDME rexroth
Contextual Info: RDE 50 060-E/08.95 Hydro-elektrischer Druckschalter Typ HED 8, Serie 1X Hydro-electric Pressure switch Type HED 8, Series 1X RDE 50 060-E/08.95 Ersetzt / Replaces: 12.94 Bei Ersatzteilbestellung bitte die komplette Typenbezeichnung siehe Typenschild angeben.

Contextual Info: Document Number: MMRF1021N Rev. 0, 7/2014 Freescale Semiconductor Technical Data RF Power LDMOS Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this

Z6 3pin

Abstract: J262 AFT09MS007NT1
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT09MS007N Rev. 1, 4/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT09MS007NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this

GRM55DR61H106KA88L

Abstract: MW7IC2040N atc100b0r8bt500xt atc100b6r8ct500xt multicomp chip resistor CRCW12065601FKEA Pcb 065-44 ATC100B1R0BT500XT 02499 A115
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW7IC2040N Rev. 0, 2/2009 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2040N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 1990 MHz. This multi - stage

LM340T5

Abstract: capacitor 476 SMD 6078B smd transistor A6a dale resistor data sheet DIODE 1N4001 SMD resistor smd A6A smd transistor 2f VALOR lan transformer
Contextual Info: DUMBHUB REV C Partslist Monday, March 04, 1996 ite m Referance Qty Devaice Device Description Package Vendor Vendor PN 1 C1 1 Capacitor ELEC_107 515D Sprague 2 10 Capacitor .01MF COG Ceramic Capacitor CC1812 KEMET 3 C15,C1921,C2326,C29-30 C2 515D107M016A A6A

AFT504

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT05MS004N Rev. 0, 7/2014 RF Power LDMOS Transistor High Ruggedness N-Channel Enhancement-Mode Lateral MOSFET AFT05MS004NT1 Designed for handheld two-way radio applications with frequencies from 136 to 941 MHz. The high gain, ruggedness and wideband performance of this

GRM55DR61H106KA88L

Abstract: MW7IC2040NBR1 atc100b6r8ct500xt MW7IC2040N A114 A115 AN1977 AN1987 JESD22 TO272WB-16
Contextual Info: Freescale Semiconductor Technical Data Document Number: MW7IC2040N Rev. 1, 11/2009 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2040N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 1990 MHz. This multi - stage

ATC600F470BT250XT

Abstract: ATC600F241JT250XT CWCR0805 0908SQ-27NGLC Z27 transistor
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 1, 4/2013 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of

Contextual Info: Freescale Semiconductor Technical Data Document Number: MW7IC2040N Rev. 1, 11/2009 RF LDMOS Wideband Integrated Power Amplifiers The MW7IC2040N wideband integrated circuit is designed with on - chip matching that makes it usable from 1805 to 1990 MHz. This multi - stage

johanson

Contextual Info: Freescale Semiconductor Technical Data Rev. 15, 12/2004 RF Power Field Effect Transistors MRF284LR1 MRF284LSR1 N - Channel Enhancement - Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier

ATC600F241JT

Abstract: GRM31CR61H106KA12L atc 17-25 transistor 62 Z27 transistor J103 transistor 3 pin AFT05 GRM31CR61H106K 0806SQ-5N5GLC GRM31CR61H106KA12
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 0, 6/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and broadband performance of

68b1

Contextual Info: 56 12 34 1 12344561 1 1563789AB8C342DE3FA893789BAB 3 1 1 EF3 1 2134561789AB1CDEBF61F861C1BD1C1 211AB9AB1A68B191BD1 1 21!D"B#$BFB1 21!48E619481D8%D""1F851&4'B86$$1 D8BDE1 A$4811 DEBF61D1*3+1 21,4'16""4(468(-1.A91BD1/011

j0810

Abstract: J0743 j0249 100b1r5jp500x J0313
Contextual Info: Document Number: MRF5S4140H Rev. 2, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of

Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 0, 6/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs AFT05MS031NR1 AFT05MS031GNR1 Designed for mobile two-way radio applications with frequencies from

atc 17-25

Abstract: AFT05MS031NR1 atc0805wl ATC600F241JT GRM21BR72A103KA01B J027
Contextual Info: Freescale Semiconductor Technical Data Document Number: AFT05MS031N Rev. 0, 5/2012 RF Power LDMOS Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs Designed for mobile two-way radio applications with frequencies from 136 to 520 MHz. The high gain, ruggedness and wideband performance of

Contextual Info: Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation

C8450

Abstract: MRF5S4140H
Contextual Info: Document Number: MRF5S4140H Rev. 1, 1/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these

J0743

Abstract: MRF5S4140H j0810 100B121JP500X A114 A115 AN1955 C101 JESD22 MRF5S4140HR3
Contextual Info: Document Number: MRF5S4140H Rev. 2, 5/2006 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these

RE60G1R00

Abstract: RM73B2B682JT RM73B2B152JT SME50VB 56590653B
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF284R1 MRF284LSR1 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for PCN and PCS base station applications with frequencies from 1000 to 2600 MHz. Suitable for FM, TDMA, CDMA, and multicarrier amplifier

Contextual Info: Freescale Semiconductor Technical Data RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs Designed for Class A or Class AB general purpose applications with frequencies from 1600 to 2200 MHz. Suitable for analog and digital modulation

MRF5S4140H

Contextual Info: Document Number: MRF5S4140H Rev. 2, 5/2006 Freescale Semiconductor Technical Data N - Channel Enhancement - Mode Lateral MOSFETs MRF5S4140HR3 MRF5S4140HSR3 Designed for broadband commercial and industrial applications with frequencies from 400 to 500 MHz. The high gain and broadband performance of these