MO-1428A
Abstract: No abstract text available
Text: HN58C1001 Series 131072-word x 8-bit Electrically Erasable and Programmable CMOS ROM HITACHI ADE-203-028F Z Rev. 6.0 Apr. 8, 1997 Description The Hitachi HN58C1001 is a electrically erasable and programmable ROM organized as 131072-word x 8-bit. It has realized high speed, low power consumption and high
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HN58C1001
131072-word
ADE-203-028F
128-byte
HN58C1001R
TFP-32DAR)
HN58C10O1
MO-1428A
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ic 7493 truth table
Abstract: 1601 resistor pack IMS1600 IMS1601LM
Text: IM S 1 6 0 0 M IM S 1 6 0 1 L M CMOS High Performance 64K x 1 Static RAM MIL-STD-883C mos DESCRIPTION FEATURES • INMOS' Veiy High Speed CMOS • Advanced Process -1 .6 Micron Design Rules • Full Military Temperature Operating Range -55°C to +125°C
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IMS1600M
IMS1601LM
MIL-STD-883C
MIL-STD-883C
22-Pin,
300-mil
22-Pin
64Kx1
MIL0N-70M
ic 7493 truth table
1601 resistor pack
IMS1600
IMS1601LM
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tower pro sg 90
Abstract: No abstract text available
Text: SGS-THOMSON Æ M28F410 M28F420 ÍL [ fï C M O S 4 Megabit x8 or x16, 7 Blocks FLASH M E M O R Y ADVANCE DATA DUAL x8 andx16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP56 and S044 MEMORY ERASE in BLOCKS - One 16K Byte or 8K Word Boot Block (top or bottom location) with hardware write and
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M28F410
M28F420
andx16
TSOP56
20/25mA
M28F410,
7W1S37
tower pro sg 90
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IA15
Abstract: No abstract text available
Text: G 7. SGS-1H 0 MS 0 N M28V841 HQÊISOIlLiÊratôIRiOlgS LOW VOLTAGE 8 Megabit 1 Meg x 8, Sector Erase FLASH M EM O RY PRODUCT PREVIEW • SMALL SIZE PLASTIC PACKAGES TSCJP40 and S044 ■ MEMORY ERASE in SECTORS - 16 Sectors of 64K Bytes each ■ 3V ± 0.3V SUPPLY VOLTAGE
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M28V841
TSCJP40
100ns
TSOP40
x20mm
IA15
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Untitled
Abstract: No abstract text available
Text: HN58C1001 Series Preliminary 1M 128K x 8-bit EEPROM • DESCRIPTION The Hitachi HN58C1001 is a 1-Megabit CMOS Electrically Erasable Programmable Read Only Memory (EEPROM) organized as 131,072 x 8-bits. The HN58C1001 is capable of in-system electrical Byte and Page reprogrammability.
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HN58C1001
128-Byte
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Untitled
Abstract: No abstract text available
Text: 5 7 . S G S -T H O M S O N [fflM iH iM M B g S M28V841 LOW VOLTAGE 8 Megabit 1 Meg x 8, Sector Erase FLASH MEMORY PRODUCT PREVIEW • SMALL SIZE PLASTIC PACKAGES TSOP40 and S044 ■ MEMORY ERASE in SECTORS - 16 Sectors of 64K Bytes each ■ 3V ± 0.3V SUPPLY VOLTAGE
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M28V841
TSOP40
100ns
7T2T237
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Untitled
Abstract: No abstract text available
Text: HN62W428 Series 524,288-word x 16-bit / 1,048,576-word x 8-bit CMOS Programmable Mask ROM HITACHI The HN62W 428 is a 8-M bit CMOS Programmable Mask ROM organized either as 524,288 words by 16 bits or as 1,048,576 words by 8 bits. Realizing low power consum ption, this memory is allowed
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HN62W428
288-word
16-bit
576-word
HN62W
HN62W428P
HN62W428FB
42-pin
DP-42)
44-pin
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A13D
Abstract: No abstract text available
Text: M29F400T M29F400B Æ T S G S -T H O M S O N * l i . IM M i[ L Ë (g W i[] S 4 Mb (x8/x16, Block Erase SINGLE SUPPLY FLASH MEMORY DATA BRIEFING • 5V±10% SUPPLY VOLTAGE for PROGRAM, ERASE and READ OPERATIONS ■ FAST ACCESS TIME: 70ns ■ FAST PROGRAMMING TIME
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M29F400T
M29F400B
x8/x16,
TSOP48
AI01977
M29F400T,
29F400T
120ns
A13D
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