ZD 351 Search Results

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS ZD 3.0mmL Chip Type series Chip type with 3.0mmL height. Designed for surface mounting on high density PC board. Applicable to automatic mounting machine fed with carrier tape. Compliant to the RoHS directive 2011/65/EU .

Contextual Info: アルミニウム電解コンデンサ ALUMINUM ZD ELECTROLYTIC CAPACITORS チップ3.0mmL品 シリーズ 面実装品 耐洗浄品 小形薄形品 面実装タイプ製品高さ 3.0mmL 品。 キャリアテーピング包装により自動装着が可能。

microprocessor Rockwell R6500

Contextual Info: R6500/1E R6500/1E Microprocessor Emulator Device * » Rockwell INTRODUCTION document. The R650Q/1 Product Description Order No. 212 con­ tains a description of R6500/1 functions and interface signals. The R6500/1E device provides all the features of the R6500/1

2716 PROM

Abstract: 2732 prom 2716A "64-pin" rockwell microprocessor Rockwell R6500 maxim max 1987 rom 2716 r65001
Contextual Info: R6500/1E R6500/1E Microprocessor Emulator Device Rockwell INTRODUCTION document. TheR650Q/1 Product Description Order No. 212 con­ tains a description of R6500/1 functions and interface signals. The R6500/1E device provides all the features of the R6500/1

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 32K x 36 Bit Flow-Through BurstRAM Synchronous Fast Static RAM Order this docum ent by MCM69F536C/D MCM69F536C The MCM69F536C is a 1M bit synchronous fast static RAM designed to pro­ vide a burstable, high performance, secondary cache for the 68K Family,

Contextual Info: MICRON I 128K X TECHNOLOGY, INC. MT58LC128K16/18B3 16/18 SYNCBURST SRAM 128KX 16/18 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, FLOW-THROUGH AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • Fast access times: 8.5,9,10 and 11ns

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

WT 7520

Abstract: diode lt 8220 SAC 1630 L saa 1070 tic125 tsumu T920 thyristor GE 1780 scr 3f scr thyristor power diode 1000 volt 700 amper
Contextual Info: POWER SEMICONDUCTORS IN C 1TE D • 72^14^0 D0003b4 1 ■ POS "T-Ol-01 T'-ZS-C>| D PACK THYRISTOR POWER PACK TH YR ISTO R S 28mm. <25 mm.) RMS Forward Current Ave. Forward Current Peak One-Cycle Surge @ 8.3 ms I 2 t @ 8.3 ms Forward Voltage Drop Max. Operating Temperature

zd2500

Abstract: WT 7520 CS 601 thyristor TIC125 T920 thyristor power diode 1000 volt 700 amper thyristor 100 amper diode lt 8220 cs 1694 eo saa 1070
Contextual Info: POWER SEMICONDUCTORS INC 1TE D • 7 2 ^ 1 4 ^ 0 D0003b4 1 ■ POS " T -O l-0 1 T '- Z S - C > | RMS Forward Current Ave. Forward Current Peak One-Cycle Surge @ 8.3 ms I 2 t @ 8.3 ms Forward Voltage Drop Max. Operating Temperature Symbol Units ' t RMS

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: ISSI IS61SP6464 64Kx 64 SYNCHRONOUS PIPELINE STATIC RAM PRELIMINARY APRIL 1999 FEATURES DESCRIPTION • Fast access time: The IS S IIS61SP6464 is a high-speed, low-power synchro­ nous static RAM designed to provide a burstable, highperformance, secondary cache for the i486 , Pentium™,

SEM 5027A

Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
Contextual Info: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES

MX28F4000

Contextual Info: m M X 2 8 F4 0 0 0 MACRONIX. INC. 4 M -B IT 5 1 E K x S C M O S F L A S H M E M O R Y FEATURES • 524,288 bytes by 8-bit organization • Fast access time: 120/150/200ns • Low power consumption - 50mA maximum active current - • • • • 1 0 0 nA m a xim u m standby current

PE-68510

Abstract: PE-68508 PE 68508 TH1042
Contextual Info: HIGH SPEED LAN MAGNETICS MODULES Pulse A TECHNITROL COMPANY Designed for 100 Mbps and 155 Mbps Transmission over UTP-5 Cable 155 ATM, 100Base-TX, TP-FDDI, and 10/1 OOBase-TX applications Cable interface for isolation and low common mode emissions Fully integrated modules for multiport

ZD 103 ma

Abstract: LT/SG3527A op292g AD8436
Contextual Info: 3 75 90 98 190 0.1 0.001 10 5 H 3 5 67 85 98 190 0.1 0.001 10 5 H • • 1 0.095 0.013 2.5 2 90 100 105 45 0.015 0.020 10 45 H • • 1 5 2.7 6 4 60 65 113 22 0.05 0.550 30 20 H S S • • 1 3 5 25 20 38 45 83 45 0.05 0.700 50 2501 I S S PDIP5 <6 1 0.004

XFC-B

Abstract: 65ZD tl 2345 ml MD139 motor zd cz 35 F00000 4xc 8-pin 73d25
Contextual Info: XFE Family extended FAXENGINE Device Set Rockwell INTRODUCTION FAXENGINE extended Facsimile Controller T he R ockw ell e x te n d e d FAX E N G IN E ™ D evice Set co nsists of a R ockw ell e x te n d e d F acsim ile Controller XFC device and a R o ckw e ll M O N O FA X M odem

Contextual Info: W E S T E R N D ÍG /T A L C O R P O R A T I O N WD1100-13 ECC Support Device FEATURES • 32 BIT COMPUTER SELECTED POLYNOMIAL • PARALLEL INPUT AND OUTPUT • DATA TRANSFER RATES UP TO 5 MBITS/SEC • RECORD LENGTH UP TO 1038 BYTES INCLUD­ ING CHECK BYTES

AL5V

Contextual Info: V M 7 1 8 0 F S eries 4 r VTC Inc. V alue the C ustom er 2 or 4-CHANNEL, 5-VOLT, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER PRELIMINARY FEATURES • August, 1997 BLOCK DIAGRAM G e n e ra l - Single Power Supply 5 V ± 10% - Designed for 2-Terminal Thin-Film or MIG Heads

Diode KD 514

Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Contextual Info: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 16K x 16 Bit Cache Tag RAM for PowerPC Processors The MPC27T416 is a 262,144 bit cache-tag static RAM designed to support PowerPC microprocessors at bus speeds up to 66 MHz. It is organized as 16K words of 16 bits each. There are 14 common I/O tag bits and 2 separate I/O

Contextual Info: M O TO R O LA SEMICONDUCTOR TECHNICAL DATA Order this docum ent by MCM69P618A/D MCM69P618A Product Preview 64K x 18 Bit Pipelined BurstRAM Synchronous Fast Static RAM The MCM69P618A is a 1M bit synchronous fast static RAM designed to pro­ vide a burstable, high performance, secondary cache for the 68K Family, Pow­

Contextual Info: FU JITSU SEM IC O N D U C TO R DATA SH EET_ : . ASSP Power Supply BIPOLAR Power Management Switching 1C with flash memory power switching function MB3807A • DESCRIPTION When data is written to or read from flash memory, it requires that the voltage at its power supply (V pp) be switched

1MX16

Abstract: AS4LC1M16S0 4lc2m8
Contextual Info: AS4LC2M8S0 AS4LC1M16S0 H igh Perform ance 2MX8/1MX16 CMOS DRAM 1 6 M egabit CM O S synchronous DRAM Advance information Features • Organization: 1,048 ,5 7 6 w ords x 8 bits x 2 banks 2M x8 52 4 ,2 8 8 w ords x 16 bits x 2 banks (lM x 16) • All signals referenced to positive edge o f dock