ZD 410 Search Results

Contextual Info: CMOS DRAM KM416C156B/BL/BLL 256K x 1 6 Bit CMOS Dynamic RAM with Fast Page Mode GENERAL DESCRIPTION FEATURES The S am sun g K M 4 16 C 1 56 B /B L7 B L L is a C M O S high • Performance range: tflC s p e e d 2 6 2 ,1 4 4 b it x 1 6 D y n a m ic R a n d o m A c c e s s

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: P a r a d i g PDM44026 m 32K x 36 Fast CMOS Synchronous Static SRAM with Interleaved Burst Counter Features Description □ Interfaces directly with the i486 , Pentium™ processors 80,66, 60,50,40 MHz □ High Speed Access Times - Clock to data valid times:

taa 723

Abstract: A0-A10J-1 A10C A10EC
Contextual Info: KM44C4002A, KM44C4102A CMOS DRAM 4 M x 4 Bit CM OS Dynamic RAM with Static Column Mode DESCRIPTION T his is a fa m ily of 4,194 ,3 0 4 x 4 tyt Static C olum n M ode C M O S DRAM s. Static Colum n M ode offers high speed ran d o m acce ss of m em ory ce lls w ithin the sam e row. R efresh cycle 2K Ref. o r 4 K R ef. , acce ss

CD40102B

Abstract: CD401036
Contextual Info: ^ Tex a s In s t r u m e n t s Data sheet acquired from Harris S em iconductor S C H S 095 CMOS 8-Stage Presettable Synchronous Down Counters High-Voltage Types 20-Volt Rating CD40102B - 2-Decade BCD Type CD40103B — 8-Bit Binary Type • CD40102B. and CD401Q3B con

TC55VD1618FF-133

Contextual Info: TOSHIBA TC55VD1618FF-133,-150,-167 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 1,048,576-WORD BY 18-BIT SYNCHRONOUS NO-TURNAROUND STATIC RAM DESCRIPTION The TC55VD1618FF is a synchronous static random access memory SRAM organized as 1,048,576 words by

WD10C20-05

Abstract: WD2010 WD1010 wd10c20 controller st506 C110 disk drive read write amplifier
Contextual Info: WESTERN C O R P O R D IG ITA L A T I O N £ o _L o O 10 o W D10C20-05 Self-Adjusting Data Separator FEATURES • • PROCESSES ALL SENSITIVE READ/WRITE DATA SIG N ALS CM O S TEC HNO LOG Y ADJUST = d d d d d d d d d V SS WGATE RGATE • • • • DESIGNED FOR ST506/ST412 A N D WD1010/

Contextual Info: * ' Ü LL •«Mt r-1 >L* »f '•ì'-^ÌliÌ h #gfc.,K-.»,1&& yWtol „sS w?r t^t^SÉV’ » itK&m*I I FUJITSU SEMICONDUCTOR DATA SHEET D S05- 2 08 1 8- 1E FLASH MEMORY CMOS 2M 256K x 8 MBM29F002T/002B/002ST/002SB ■ DISTINCTIVE CHARACTERISTICS • Single 5.0 V read, write, and erase

1310nm TRANSCEIVER CIRCUIT DIAGRAM

Abstract: 8GHz transceiver specification ZD 410 MF 1310nm photodiode for 10Gbps 1310nm ROSA 10Gbps 1310nm TRANSMITTER CIRCUIT DIAGRAM GR-253-CORE I-64 MF-10KSXA-007ZA SDD11
Contextual Info: Mitsubishi Electric Corp. Datasheet MITSUBISHI OPTICAL DEVICES MF-10KSXA-007ZA 10Gbps 1310nm XFP Optical Transceiver XFP Multirate Optical Transceiver MF-10KSXA-007ZA Features: • • • • • • • Protocol Independent 10Gbps transceiver Hot pluggable

Contextual Info: PRELIMINARY DATA SHEET - Z o Z V ,ON IS D 2 5 0 0 S e r ie s Single-Chip Voice Record/Playback Devices 60-, 75-, and 90-Second Durations @ d e v ic e s GENERAL DESCRIPTION FEATURES provides high-quality, single-chip record/playback

566 pin diagram

Abstract: 734A coaxial cable hp54502a hp3784A TAIS SOT TXC-02021 power combiner broadband transformers HP-3784A 10A ferrite bead b3-z
Contextual Info: ART Devices Advanced DS3/STS-1 Receiver/Transmitter ART: TXC-02020 44-Pin ARTE: TXC-02021 (68-Pin) • Single device line interface for DS3 and STS-1 • Single +5V power supply • Meets ‘crossconnect frame’ mask requirements • Adaptive equalization for 0 - 450 ft. of cable

JR240V

Abstract: JR200V bo 135 JR240 JR220V JR170V
Contextual Info: 18E 5 SILICONIX INC • Î2SM735 0013110 0 JR135V SERIES f n r S ilic o n ix in c o r p o r a t e d High-Voltage Current Limiting Diodes _ ' V 11- - 2.7 o > CL — The JR135V Series of high-voltage diodes utilizes a MOS process to provide active current limiting over

Contextual Info: molate 1Meg X 4 Monolithic DRAM MDM41000-80/10/12/X0179 S e m ic o n d u c to r Issue 1.0: September 1992 inc. ADVANCE PRODUCT INFORMATION Pin Definition Package Type: •K'.'V/G'/W’.’J' 1,048,576 x 4 CMOS High Speed Dynamic RAM Features Row Access Time of 80,100,120 ns

E 170968

Contextual Info: ff CYPRESS PRELIMINARY W161 133-M Hz Spread Spectrum FTG for Pentium II Platforms Features Spread Spectrum % • Maximized EMI Suppression using Cypress’s Spread Spectrum Technology • Three copies of CPU outputs at 100 or 133 MHz

um611864

Contextual Info: a S amar a a P R E L IM IN A R Y - UM611864 64K X 18 Bit Synchronous High Speed CMOS SRAM Features Single +5V power supply Fast access times: 9/11 ns Current: Operating: 275mA Standby: 95mA Synchronous self-timed write Individual byte write control Asynchronous output enable

DG34B

Contextual Info: KM44C4 1 04B S CMOS DR AM ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power

Contextual Info: Û 2 35 hü 5 QüfilbOl T7fi S IE M E N S PROFET BTS410H2 Smart Highside Power Switch Features • • • • • • • • Overload protection Current limitation Short circuit protection Thermal shutdown Overvoltage protection including load dump Fast demagnetization of inductive loads

ZD 410 MF

Contextual Info: f* ALUMINUM ELECTROLYTIC CAPACITORS n ic h x c o n Chip Type, Higher Capacitance Range U J F jrS M D Long Lile Anti-Solvent Feature Through ’OOVonly • Chip Type, higher capacitance in larger case sizes <j> 12.5, ^ 1 6 , ^ 1 8 , ^ 20) • Designed for surface mounting on high density PC board.

Contextual Info: MICRODEVICES GENERAL PURPOSE LOW-NOISE AM PLIFIER Typical Applications • Receive or Transmit Low-Noise Amplifiers • Portable Battery Powered Equipment • FDD and T D D Communication Systems • Wireless LAN • Commercial and Consumer Systems • ISM Band Applications

2SA1420

Abstract: SC36 small signal transistor
Contextual Info: Ordering number: EN 1682A 2SA1420/2SC3653 PNP/ NPN Epitaxial P lanar Silicon Transistors SAßtYO i Switching Applications _ with Bias Resistor Use .Switching circuit, inverter circuit, interface circuit, driver circuit Features . With bias resistor (R1=47kfl ,R2=47kO ).

Contextual Info: ALUMINUM ELECTROLYTIC CAPACITORS UJ Chip Type, Higher Capacitance Range series Chip Type, higher capacitance in larger case sizes φ12.5, φ16, φ18, φ20 Designed for surface mounting on high density PC board. Applicable to automatic mounting machine fed with carrier

Contextual Info: A d van ced P o w er Te c h n o l o g y APT1004RGN 1000V 3.3A 4.00Í2 POWER MOS IV TM N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS MAXIMUM RATINGS Symbol V DSS All Ratings: Tr = 25°C unless otherwise specified. Parameter APT1004RGN UNIT 1000

zd 332

Contextual Info: n ie lli con ALUMINUM ELECTROLYTIC CAPACITORS SB Chip Type, Higher Capacitance Range series ForSMD 3 Ling Lite Anti-Solvent "eature * Chip Type, higher capacitance in larger case sizes <f>12.5, 16, <p 18, ^2 0 * Designed for surface mounting on high density PC board.

flyback transformer tv

Abstract: sot-26 pwm controller DIODE fr107 SGP400 SG6849 fri07 TV flyback transformer pwm driver sot-26 MARKING TRANSISTOR BD RC SB360 diode
Contextual Info: Product Specification SGP400 Low-Power Green-Mode PWM Flyback Power Controller without Secondary Feedback FEATURES DESCRIPTION „ „ This highly integrated PWM controller provides several features to enhance the performance of low-power flyback converters. To minimize standby power