ZENER DIODE 15 V Search Results

1N4744A

Abstract: 026 zener
Contextual Info: 1N4744A 15 V - 5 A - 1 W - Glass Passivated Junction Silicon Zener Diode 0.26 Diodes . Page 1 of 1 Enter Your Part # Home Part Number: 1N4744A Online Store 1N4744A Diodes 15 V - 5 A - 1 W - Glass Passivated Junction Silicon Zener Transistors Diode Integrated Circuits

Contextual Info: SEMICONDUCTOR KDZ7.5CF TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. FEATURES 2006. 12. 15 Revision No : 2 1/2

rd6.8a

Abstract: zener rd9.1esb2 rd5.6b RD11UM 09-5 diode RD30F RD6,8MW RD2.4E RD5.1P RD51P
Contextual Info: CD-ROM Diode CD-ROM X13769XJ2V0CD00 09-1 Diode Zener Diode • Zener Diode Quick Reference Surface-Mount Type (1/2) Vz (V) P (W) TYP. 0.15 2.0 2.2 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 RD2.0UM RD2.2UM RD2.4UM RD2.7UM

Schottky Barrier Diodes

Abstract: Switching Diodes DIODE 19 9 Rohm Diodes Rohm Schottky Barrier Diodes
Contextual Info: Contents Contents Page Introduction 9 Switching diodes summary 10 Band switching diodes summary 12 Rectifying diodes summary 13 Schottky barrier diodes summary 14 Variable capacitance diode summary 15 Zener diodes summary 15 Diode array summary 16 Quality assurance and reliability 19

zener diode 5.6v

Abstract: zener diode 531 zener diode 9.1v zener diode testing circuit 1N5347B 1N5339B zener 9.1v datasheet diode zener d1 List of Zener diode zener diode numbering system
Contextual Info: For assistance or to order, call Revised 5/15/98 Application 800 531-5782 Notes PT78 & PT79 ISR Series Suggested OVP Zener Diodes for PT79 Series ISRs The PT79SR100 requires an over-voltage protection (OVP) zener diode on the output to prevent turn-on overshoot. The table below lists the appropriate zener voltage and

zener diode RD2.2S

Abstract: RD2.0HS rd2.2m nec 10f RD16MW str 450 a RD4.3HS NEC Zener diode RD3.0M RD3.0HS RD51P
Contextual Info: Diode Zener Diode • Zener Diode Quick Reference 1/2 Vz (V) P (W) TYP. 2.0 2.2 2.4 2.7 3.0 3.3 3.6 3.9 4.3 4.7 5.1 5.6 6.2 6.8 7.5 8.2 9.1 10 11 12 13 15 16 18 20 22 24 27 30 33 36 39 43 47 51 56 62 68 75 82 91 100 110 120 Package 0.2 0.15 RD4.7UJ RD5.1UJ

zener

Abstract: zener 14v diode zener diode table 1N5339B diode zener protection ZENER DIODE POWER RATING 1N5351B diode zener d1 1N5340B 1N5347B
Contextual Info: For assistance or to order, call Revised 5/15/98 Application 800 531-5782 Notes PT78 & PT79 ISR Series Suggested OVP Zener Diodes for PT79 Series ISRs The PT79SR100 requires an over-voltage protection (OVP) zener diode on the output to prevent turn-on overshoot. The table below lists the appropriate zener voltage and

1ZB36

Abstract: DIODE 1zb36 1ZB36 zener zener 150v 1w 120V 1W Zener Diode 3Z27 DIODE 1ZB20 zener zener diode 6.2v 1w ZENER 68V 1W 1Z150
Contextual Info: POWER ZENER Diode -> Power Dissipation F2.L3 Zener Voltage «- 1W Pacakae DO-41 SS DO-15 3W 5W DO-15L DO-201 AD _ 6.2V 1Z6.2 6.8V 7.5V 1Z6.8, 1Z6.8A 1ZB6.8 1Z7.5, 1Z7.5A 1ZB7.5 8.2V 1Z8.2, 1Z8.2A 1ZB8.2 9.1V 1Z9.1, 1Z9.1A 1ZB9.1 10V 1Z10, 1Z10A 1ZB10 11V 1Z11, 1Z11A

zener diode IN 825

Abstract: 1N4566 zener diode 1n 4565 4577 1N3157 1N821 1N823 1N825 1N827
Contextual Info: n=7 SGS-THOMSON ^7 # GENERAL PURPOSE & INDUSTRIAL MO K@ilLIi STO©R!lû(gi ZENER DIODES SYMMETRICAL ZENER DIODE Type Vz t ' I z t 'ZT rZT 1 <ZT V(CL @ Ipp Ct yp Ir ' V r V(CL) @ Ipp Package Vr = 0 BZV 37 max. 6.2 (Ö) (mA) 6.8 (V) 20 5 (V) (A) 15 F = 1 MHz

Contextual Info: Zener Diode STZ6.8T •Applications Constant voltage control •E x te rn a l dimensions Units: mm •Features 1) Designed for mounting on small surface areas (SMD3) 2) High reliability 3)Composite type with two cathode common elements dOZ ÉH . 15-Q.Oe.

CLA 80 E 1200

Abstract: 2EZ11 2EZ12 2EZ13 2EZ14 2EZ15 2EZ16 2EZ200 LF-500
Contextual Info: 2EZ11 THRU 2EZ200 TRANSYS ELECTRONICS GLASS PASSIVATED JUNCTION SILICON ZENER DIODE LIMITED VOLTAGE - 11 TO 200 Volts Power - 2.0 Watts FEATURES Low prof e package DO-15 Built-in strain re ef Glass passivated junction Low inductance Excellent clamping capab ity

1N5333B

Abstract: Diode 1N5333B diode DO-15 5W zener diode 1N5334B 1N5335B 1N5336B 1N5337B 1N5338B 1N5388B
Contextual Info: 1N5333B THRU 1N5388B 5W SILICON ZENER DIODE DO-15 VZ : 3.3 - 200 Volts PD : 5 Watts FEATURES : 1.00 25.4 MIN. 0.142 (3.6) 0.102 (2.6) * Complete Voltage Range 3.3 to 200 Volts * High peak reverse power dissipation * High reliability * Low leakage current

DZ2J240

Abstract: DIODE ZENER BV
Contextual Info: DZ2J240 Reference Spice Parameter Total pages page 1 1 *Device symbol Product name: DZ2J240 Product type: Zener Diode Parameters *$ .MODEL DZ2J240 D + IS=3.2644E-15 + N=1.0936 + RS=0.16249 + IKF=12.928E-3 + CJO=10.693E-12 + M=0.42222 + VJ=0.70174 + ISR=32.70249E-13

1N4956

Abstract: 1N4967 datasheet 1N4989 1N4976 1N4954 1N4955 1N4984 diode DO-15
Contextual Info: TH97/10561QM 1N4954 ~ 1N4989 TW00/17276EM IATF 0060636 SGS TH07/1033 SILICON ZENER DIODE DO-15 VZ : 6.8 - 200 Volts PD : 5 Watts FEATURES : 0.140 3.6 0.104 (2.6) * Glass passivated junction chip * High peak reverse power dissipation * High reliability * Low leakage current

ZENER 15

Abstract: zener diode zener i r zener diode 15 v 5 volts ZENER DIODE Zener Diode 10 z Zener Diode 15 ZENER diode BOOK zener regulator applications
Contextual Info: Voltage Regulator Diode Zener 15 V / 10 W Technical Data Typical applications : Designed to provide a near constant voltage when operated in the reverse breakdown mode but when operated with a forward bias it behaves similarly to any forward biased rectifier junction.

VL370-5-15

Contextual Info: VL370-5-15 TECHNICAL DATA UV LED, 5 mm InGaN Features • • • • Zener diode is built in the protective circuit against static electricity Low Voltage DC Operated High Power Intensity Complies with RoHS Directive Specifications 25°C Item Absolute Maximum Ratings

VL390-5-15

Contextual Info: VL390-5-15 TECHNICAL DATA UV LED, 5 mm InGaN Features • • • • Zener diode is built in the protective circuit against static electricity Low Voltage DC Operated High Power Intensity Complies with RoHS Directive Specifications 25°C Item Absolute Maximum Ratings

VL425-5-15

Contextual Info: VL425-5-15 TECHNICAL DATA UV LED, 5 mm InGaN Features • • • • Zener diode is built in the protective circuit against static electricity Low Voltage DC Operated High Power Intensity Complies with RoHS Directive Specifications 25°C Item Absolute Maximum Ratings

VL400-5-15

Abstract: VL400
Contextual Info: VL400-5-15 TECHNICAL DATA UV LED, 5 mm InGaN Features • • • • Zener diode is built in the protective circuit against static electricity Low Voltage DC Operated High Power Intensity Complies with RoHS Directive Specifications 25°C Item Absolute Maximum Ratings

VL410-5-15

Contextual Info: VL410-5-15 TECHNICAL DATA UV LED, 5 mm InGaN Features • • • • Zener diode is built in the protective circuit against static electricity Low Voltage DC Operated High Power Intensity Complies with RoHS Directive Specifications 25°C Item Absolute Maximum Ratings

VL380-5-15

Contextual Info: VL380-5-15 TECHNICAL DATA UV LED, 5 mm InGaN Features • • • • Zener diode is built in the protective circuit against static electricity Low Voltage DC Operated High Power Intensity Complies with RoHS Directive Specifications 25°C Item Absolute Maximum Ratings

ZY18

Abstract: ZY10GP ZY11GP ZY12GP ZY13GP ZY15GP ZY16GP ZY18GP ZY200GP ZY20GP
Contextual Info: ZY3.3GP.ZY200GP 2 W Glass Passivated Zener Diode Dimensions in mm. DO-15 Plastic Voltage 3.3 to 200 V. Power 2.0 W 6.35 ± 0.2 58.5 ± 0.5 Mounting instructions 1. Min. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350 °C.

ZY24GP

Abstract: ZY82GP ZY 20 DIODE ZY10GP ZY11GP ZY12GP ZY13GP ZY15GP ZY16GP ZY18GP
Contextual Info: ZY6V2GP.ZY200GP 2 W Glass Passivated Zener Diode Dimensions in mm. DO-15 Plastic Power 2.0 W Voltage 6.2 to 200 V. 6.35 ± 0.2 58.5 ± 0.5 Mounting instructions 1. Min. distance from body to soldering point, 4 mm. 2. Max. solder temperature, 350 °C.

245 zener

Abstract: RKZ6.8Z4KT
Contextual Info: RKZ6.8Z4KT Silicon Planar Zener Diode for Surge Absorption REJ03G1820-0100 Rev.1.00 Sep 15, 2009 Features • RKZ6.8Z4KT can absorbing surge with four devices in one chip configuration. • Low capacitance C = 4.0 pF Typ enable protecting signal line from ESD.