ZENER DIODE 250V Search Results

VB-2510

Abstract: s 6352 GB 2510 zener 6352
Contextual Info: Datasheet Shunt-Diode Barrier 0359 Description The SenGenuity Shunt-Diode Barrier is an intrinsically safe zener diode safety barrier which limits excessive energy into a hazardous location. The barrier is designed to be used in conjunction with a SenGenuity VC-2xxx Series Converter and SenGenuity VS-25xx Series

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

BYW100-100

Abstract: CFL lamp 100NF 630V L6569 L6569A L6569AD L6569D irf 146 diode 1N4006 specifications PTC 15 T 630V
Contextual Info: L6569 L6569A HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR • ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH VOLTAGE RAIL UP TO 600V BCD OFF LINE TECHNOLOGY INTERNAL BOOTSTRAP DIODE STRUCTURE 15.6V ZENER CLAMP ON VS DRIVER CURRENT CAPABILITY: - SINK CURRENT = 270mA

IR2156 application

Abstract: C 13 PH Zener diode zener diode ph 48 C 12 PH Zener diode cfl circuit diagram of 12 volts IR2156 ZENER DIODE PH 5.1V IR2156S 12v ballast ic 1N4007
Contextual Info: Data Sheet No. PD60182-I IR2156 S & (PbF) BALLAST CONTROL IC • Programmable dead time • DC bus under-voltage reset • Shutdown pin with hysteresis • Internal 15.6V zener clamp diode on Vcc • Micropower startup (150µA) • Latch immunity and ESD protection

Contextual Info: L6569 L6569A HIGH VOLTAGE HALF BRIDGE DRIVER WITH OSCILLATOR • ■ ■ ■ ■ ■ ■ ■ ■ ■ HIGH VOLTAGE RAIL UP TO 600V BCD OFF LINE TECHNOLOGY INTERNAL BOOTSTRAP DIODE STRUCTURE 15.6V ZENER CLAMP ON VS DRIVER CURRENT CAPABILITY: - SINK CURRENT = 270mA

C 11 PH Zener diode

Contextual Info: Data Sheet No. PD60182-I IR2156 S & (PbF) BALLAST CONTROL IC Features • • • • • • • Programmable dead time • DC bus under-voltage reset • Shutdown pin with hysteresis • Internal 15.6V zener clamp diode on Vcc • Micropower startup (150µA)

cmos 555 timer

Abstract: IRFC214 IR2151 IR51HD214
Contextual Info: Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.058D IR51HD214 SELF-OSCILLATING HALF-BRIDGE Features n n n n n Product Summary Output Power MOSFETs in half-bridge configuration 250V Rated Breakdown Voltage High side gate drive designed for bootstrap operation

Contextual Info: Data Sheet No. PD-6.059D IR51HD224 SELF-OSCILLATING HALF-BRIDGE Features • Output Power MOSFETs in half-bridge configuration 250V Rated Breakdown Voltage ■ High side gate drive designed for bootstrap operation ■ Bootstrap diode integrated into package

resistor BJE

Contextual Info: Data Sheet No. PD-6.058D I R 5 1 H D 2 1 4 SELF-OSCILLATING HALF-BRIDGE Features Product Summary • Output Power MOSFETs in half-bridge configuration 250V Rated Breakdown Voltage ■ High side gate drive designed for bootstrap operation ■ Bootstrap diode integrated into package

IR2151

Abstract: IR51HD224 zener diode 20w
Contextual Info: Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.059D IR51HD224 SELF-OSCILLATING HALF-BRIDGE Features n n n n n Product Summary Output Power MOSFETs in half-bridge configuration 250V Rated Breakdown Voltage High side gate drive designed for bootstrap operation

half-bridge

Abstract: high speed bridge rectifier IR2151 IR51HD224 mosfet Vcc 250v
Contextual Info: Data Sheet No. PD-6.059D IR51HD224 SELF-OSCILLATING HALF-BRIDGE Features n n n n n Product Summary Output Power MOSFETs in half-bridge configuration 250V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Bootstrap diode integrated into package

IR2151

Abstract: IR51HD214 IRFC214
Contextual Info: Data Sheet No. PD-6.058D IR51HD214 SELF-OSCILLATING HALF-BRIDGE Features n n n n n Product Summary Output Power MOSFETs in half-bridge configuration 250V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Bootstrap diode integrated into package

IR2151

Abstract: IR51H224
Contextual Info: Previous Datasheet Index Next Data Sheet Data Sheet No. PD-6.059D IR51H224 SELF-OSCILLATING HALF-BRIDGE Features n n n n Product Summary Output Power MOSFETs in half-bridge configuration 250V Rated Breakdown Voltage High side gate drive designed for bootstrap operation

Contextual Info: Data Sheet No. PD-6.058D IR51H214 SELF-OSCILLATING HALF-BRIDGE Features Product Summary • Output Power MOSFETs in half-bridge configuration 250V Rated Breakdown Voltage ■ High side gate drive designed for bootstrap operation ■ Accurate timing control for both Power MOSFETs

cmos 555 timer

Abstract: IR2151 IR51H224
Contextual Info: Data Sheet No. PD-6.059D IR51H224 SELF-OSCILLATING HALF-BRIDGE Features n n n n Product Summary Output Power MOSFETs in half-bridge configuration 250V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Accurate timing control for both Power MOSFETs

PD-60083H

Contextual Info: Preliminary Data Sheet No. PD-60083H IR51H D XXX (NOTE: For new designs, we recommend IR’s new products IR53H(D)XXX) SELF-OSCILLATING HALF BRIDGE Features Product Summary • • • • VIN (max) 250V - H(D)214/224 300V - H(D)737 400V - H(D)310/320 500V - H(D)420

bje resistor

Abstract: resistor BJE
Contextual Info: Data Sheet No. PD-6.059D nterna! fona Rectifier IR51H224 SELF-OSCILLATING HALF-BRIDGE Features • Output Power MOSFETs in half-bridge configuration 250V Rated Breakdown Voltage ■ High side gate drive designed for bootstrap operation ■ Accurate timing control for both Power MOSFETs

ls bridge rectifier

Abstract: high frequency Self-Oscillating IR51H214
Contextual Info: Data Sheet No. PD-6.058D IR51H214 SELF-OSCILLATING HALF-BRIDGE Features n n n n Product Summary Output Power MOSFETs in half-bridge configuration 250V Rated Breakdown Voltage High side gate drive designed for bootstrap operation Accurate timing control for both Power MOSFETs

STS1C1S250

Abstract: P-Channel MOSFET 120v dual zener diode 10v MOSFET N-CH 200V
Contextual Info: STS1C1S250 N-CHANNEL 250V - 0.9Ω - 0.75A SO-8 P-CHANNEL 250V - 2.1Ω - 0.6A SO-8 MESH OVERLAY POWER MOSFET TYPE STS1C1S250 N-Channel STS1C1S250(P-Channel) • ■ ■ ■ VDSS RDS(on) ID 250 V 250 V <1.4Ω <2.8Ω 0.80 A 0.60 A TYPICAL RDS(on) (N-Channel) = 0.9 Ω

STS1C1S250

Abstract: Zener Diode B1 9
Contextual Info: STS1C1S250 N-CHANNEL 250V - 0.9Ω - 0.75A SO-8 P-CHANNEL 250V - 2.1Ω - 0.6A SO-8 MESH OVERLAY POWER MOSFET TYPE STS1C1S250 N-Channel STS1C1S250(P-Channel) • ■ ■ ■ VDSS RDS(on) ID 250 V 250 V <1.4Ω <2.8Ω 0.80 A 0.60 A TYPICAL RDS(on) (N-Channel) = 0.9 Ω

zener diode B5

Abstract: STD3PS25 STD3PS25-1
Contextual Info: STD3PS25 - STD3PS25-1 P-CHANNEL 250V - 2.1Ω - 3A DPAK/IPAK MESH OVERLAY MOSFET TYPE STD3PS25 STD3PS25-1 • ■ ■ ■ ■ VDSS RDS on ID 250 V 250 V < 2.8 Ω < 2.8 Ω 3A 3A TYPICAL RDS(on) = 2.1Ω 100% AVALANCHE TESTED APPLICATION ORIENTED CHARACTERIZATION

W52NK25Z

Contextual Info: STW52NK25Z N-CHANNEL 250V - 0.033Ω - 52A TO-247 Zener-Protected SuperMESH MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS on ID Pw STW52NK25Z 250 V < 0.045 Ω 52 A 300 W • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.033 Ω EXTREMELY HIGH dv/dt CAPABILITY

w52nk25z

Abstract: STW52NK25Z zener diode - C 10 ST st 0560
Contextual Info: STW52NK25Z N-CHANNEL 250V - 0.033Ω - 52A TO-247 Zener-Protected SuperMESH MOSFET Figure 1: Package Table 1: General Features TYPE VDSS RDS on ID Pw STW52NK25Z 250 V < 0.045 Ω 52 A 300 W • ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.033 Ω EXTREMELY HIGH dv/dt CAPABILITY

STP22NS25Z

Abstract: L9 Zener STB22NS25Z a88a
Contextual Info: STP22NS25Z STB22NS25Z N-CHANNEL 250V - 0.13Ω - 22A TO-220/D2PAK Zener-Protected MESH OVERLAY MOSFET TYPE STP22NS25Z STB22NS25Z • ■ ■ VDSS RDS on ID 250 V 250 V < 0.15 Ω < 0.15 Ω 22 A 22 A TYPICAL RDS(on) = 0.13 Ω EXTREMELY HIGH dv/dt CAPABILITY