ZENER DIODE MARKING 25J Search Results

Zener diode smd marking WE

Abstract: am 5890 smd marking cj4 smd marking ce5 Zener diode smd marking code am Ce1 marking diode CE5 marking Zener diode smd marking code 14 SMD cf5 smd marking ck2
Contextual Info: Central CMHZ5221B THRU CMHZ5267B TM Semiconductor Corp. SURFACE MOUNT ZENER DIODE 2.4 VOLTS THRU 75 VOLTS 500mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHZ5221B Series Silicon Zener Diode is a high quality voltage regulator, manufactured in a surface mount package,

smd marking ce5

Abstract: Diode smd code sm Zener diode smd marking WE SMD cf5 SMD MARKING CODE CM5 Zener diode smd marking code am smd marking cj4 diode SMD CODE sm 17 smd diode marking sm 34 smd zener
Contextual Info: Central CMHZ5221B THRU CMHZ5267B TM Semiconductor Corp. SURFACE MOUNT ZENER DIODE 2.4 VOLTS THRU 75 VOLTS 500mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHZ5221B Series Silicon Zener Diode is a high quality voltage regulator, manufactured in a surface mount package,

zener diode n8

Abstract: Diode marking m7 N6 marking diode L9 Zener M7 zener zener n7 sod marking m7 n2 Diode Zener M7 zener diode CMOZ11L
Contextual Info: CMOZ1L8 THRU CMOZ47L SURFACE MOUNT LOW LEVEL SILICON ZENER DIODE 1.8 VOLTS THRU 47 VOLTS 250mW, 5% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ1L8 Series Low Level Zener Diode is a high quality voltage regulator in an epoxy-molded ULTRAmini package,

Zener diode MARKING H5

Abstract: marking code f4 DIODE h8 diode zener marking code f6 DIODE zener diode f7 diode marking code f6 CMOZ3V0 DIODE MARKING CODE H7 CMOZ5V6 diode marking code H5
Contextual Info: CMOZ2V4 THRU CMOZ43V SURFACE MOUNT SILICON ZENER DIODE 2.4 VOLTS THRU 43 VOLTS 5% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ2V4 Series Zener Diode is a high quality voltage regulator in an epoxy-molded ULTRAmini package, designed for

CMHZ5265B

Abstract: CMHZ5228B CMHZ5229B marking code CJ4 CMHZ5221B CMHZ5222B CMHZ5223B CMHZ5224B CMHZ5225B CMHZ5226B
Contextual Info: Central CMHZ5221B THRU CMHZ5267B TM Semiconductor Corp. SURFACE MOUNT ZENER DIODE 2.4 VOLTS THRU 75 VOLTS 500mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHZ5221B Series Silicon Zener Diode is a high quality voltage regulator, manufactured in a surface mount package,

cll5238b

Abstract: diode zener marking 58 CLL5221B CLL5222B CLL5223B CLL5224B CLL5225B CLL5226B CLL5227B CLL5228B
Contextual Info: Central CLL5221B THRU CLL5267B TM Semiconductor Corp. SURFACE MOUNT SILICON ZENER DIODE 2.4 VOLTS THRU 75 VOLTS 500mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CLL5221B Series Silicon Zener Diode is a high quality voltage regulator designed for use in industrial,

CMOZ13V

Contextual Info: CMOZ2V4C THRU CMOZ43VC SURFACE MOUNT SILICON ZENER DIODE 2.4 VOLTS THRU 43 VOLTS 2% TOLERANCE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMOZ2V4C Series Zener Diode is a high quality voltage regulator in an epoxy-molded ULTRAmini package, designed

w11nk90z

Abstract: STW11NK90Z W11NK90 st mosfet JESD97
Contextual Info: STW11NK90Z N-channel 900V - 0.82Ω - 9.2A - TO-247 Zener-protected SuperMESH Power MOSFET General features Type VDSS RDS on ID Pw STW11NK90Z 900V <0.98Ω 9.2A 200W • 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized

Contextual Info: STW11NK90Z N-channel 900V - 0.82Ω - 9.2A - TO-247 Zener-protected SuperMESH Power MOSFET General features Type VDSS RDS on ID Pw STW11NK90Z 900V <0.98Ω 9.2A 200W • 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized

P12NK60

Abstract: F12NK60Z isd 1740 P12NK60Z JESD97 STF12NK60Z STP12NK60Z
Contextual Info: STP12NK60Z STF12NK60Z N-channel 650 V @Tjmax- 0.53 Ω - 10 A - TO-220 /TO-220FP Zener-protected SuperMESH Power MOSFET Features RDS on max Type VDSS (@Tjmax) STP12NK60Z 650 V <0.640 Ω 10 A 150 W STF12NK60Z 650 V <0.640 Ω 10 A ID PW 35 W 3 3 • Extremely high dv/dt capability

Contextual Info: STN3N45K3 N-channel 450 V - 3.3 Ω typ., 0.6 A Zener-protected, SuperMESH3 Power MOSFET in a SOT-223 package Datasheet - production data Features 4 1 2 3 Order code VDSS RDS on max ID Pw STN3N45K3 450 V <4Ω 0.6 A 3W • 100% avalanche tested • Extremely high dv/dt capability

Contextual Info: STP12NK60Z STF12NK60Z, STW12NK60Z N-channel 650 V @Tjmax, 0.53 Ω, 10 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESH Power MOSFET Features RDS on max Type VDSS (@Tjmax) STP12NK60Z 650 V <0.640 Ω 10 A 150 W STF12NK60Z 650 V <0.640 Ω 10 A STW12NK60Z

w12nk60z

Abstract: P12NK60Z STW12NK60Z isd 1740 F12NK60Z STF12NK60Z STP12NK60Z P12NK60
Contextual Info: STP12NK60Z STF12NK60Z, STW12NK60Z N-channel 650 V @Tjmax, 0.53 Ω, 10 A TO-220, TO-220FP, TO-247 Zener-protected SuperMESH Power MOSFET Features RDS on max Type VDSS (@Tjmax) STP12NK60Z 650 V <0.640 Ω 10 A 150 W STF12NK60Z 650 V <0.640 Ω 10 A STW12NK60Z

d2536

Abstract: 2SD2536
Contextual Info: 2SD2536 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2536 Switching Applications Micro Motor Drive, Hammer Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.2 V (max)

Contextual Info: 2SD2248 Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington power transistor 2SD2248 Hammer Drive, Pulse Motor Drive Applications For Inductive Load Drive • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) · Low saturation voltage: VCE (sat) = 1.5 V (max)

D2248

Abstract: darlington transistor with built-in temperature c 2SD2248
Contextual Info: 2SD2248 Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington power transistor 2SD2248 Hammer Drive, Pulse Motor Drive Applications For Inductive Load Drive • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.5 V (max)

Contextual Info: 2SD2536 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington power transistor 2SD2536 Switching Applications Micro Motor Drive, Hammer Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) · Low saturation voltage: VCE (sat) = 1.2 V (max)

Contextual Info: 2SD2536 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2536 Switching Applications Micro Motor Drive, Hammer Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.2 V (max)

d2536

Abstract: 2SD2536
Contextual Info: 2SD2536 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2536 Switching Applications Micro Motor Drive, Hammer Drive Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A) • Low saturation voltage: VCE (sat) = 1.2 V (max)

D2088 TRANSISTOR

Abstract: transistor D2088 D2088 2SD2088
Contextual Info: 2SD2088 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington power transistor 2SD2088 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications Unit: mm • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)

D2088 TRANSISTOR

Abstract: D2088 Transistor D2088 2SD2088
Contextual Info: 2SD2088 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington power transistor 2SD2088 Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications • Unit: mm High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)

D2695 TRANSISTOR

Abstract: D2695 2SD2695
Contextual Info: 2SD2695 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2695 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)

D2088 TRANSISTOR

Abstract: D2088 transistor D2088 d2088 5-x
Contextual Info: 2SD2088 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2088 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)

D2088 TRANSISTOR

Abstract: D2088 Transistor D2088 2SD2088
Contextual Info: 2SD2088 TOSHIBA Transistor Silicon NPN Epitaxial Type Darlington Power Transistor 2SD2088 Micro Motor Drive, Hammer Drive Applications Switching Applications Unit: mm Power Amplifier Applications • High DC current gain: hFE = 2000 (min) (VCE = 2 V, IC = 1 A)