ZO 103 NA Search Results

Contextual Info: BFR92AW NPN 5 GHz wideband transistor Rev. 03 — 12 March 2008 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

BFG505

Contextual Info: BFG505; BFG505/X NPN 9 GHz wideband transistors Rev. 04 — 22 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

Contextual Info: BFG505; BFG505/X NPN 9 GHz wideband transistors Rev. 04 — 22 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

nec 2401 831

Abstract: nec 2401 2SC5010 nec 2035 744 2SC5010-T1 3699 npn
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

BFG540

Abstract: BFG540X fibreoptical MRA751 PHILIPS BFG540 MRA760
Contextual Info: BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor Rev. 05 — 21 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

BFG520

Contextual Info: BFG520; BFG520/X; BFG520/XR NPN 9 GHz wideband transistor Rev. 04 — 23 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

Contextual Info: BFG540; BFG540/X; BFG540/XR NPN 9 GHz wideband transistor Rev. 05 — 21 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact

2SC5246

Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

2SC5247

Abstract: Smpak
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

A08 monolithic amplifier

Abstract: MSA-0885 msa0885 mmic a08 A08 mmic HP MMIC Silicon Bipolar Amplifier A08
Contextual Info: Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0885 purpose 50 Ω gain block above 0.5␣ GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and moderate band IF and RF amplifiers in commercial and industrial applications.

MMIC marking code 101

Abstract: MMIC SOT 89 marking CODE sot143 Marking code p1 MSA-0611-TR1G MSA-0611 MSA-0611-BLK MSA-0611-TR1 MSA-0611-TR2 MSA0611
Contextual Info: MSA-0611 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet Description Features The MSA-0611 is a low cost silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in the ­surface mount plastic SOT‑143 package. This MMIC is designed for use as a general purpose 50Ω gain block. Typical applications include narrow and broad band IF and RF amplifiers in commercial and industrial applications.

mmic a08

Abstract: MSA-0885
Contextual Info: Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0885 purpose 50 Ω gain block above 0.5 GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and moderate band IF and RF amplifiers in commercial and industrial applications.

s-parameter s11 s12 s21 10000

Abstract: 2SC5008 2SC5008-T1
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: Low Skew, 1-to-2, Differential-to-LVPECL/ECL Fanout Buffer ICS85311I DATA SHEET General Description Features The ICS85311I is a low skew, high performance 1-to-2 Differential-to-2.5V/3.3V ECL/LVPECL Fanout Buffer HiPerClockS and a member of the HiPerClockS™ family of High

Contextual Info: Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0870 purpose 50 Ω gain block above 0.5 GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and moderate band IF and RF amplifiers in industrial

diode gp 421

Abstract: MSA-0870
Contextual Info: Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0870 purpose 50 Ω gain block above 0.5␣ GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and moderate band IF and RF amplifiers in industrial

MSA-0870

Contextual Info: Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0870 purpose 50 Ω gain block above 0.5 GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and moderate band IF and RF amplifiers in industrial

mmic a08

Abstract: MSA-0885 HP MMIC 101 A08 monolithic amplifier A08 mmic
Contextual Info: Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0885 purpose 50 Ω gain block above 0.5 GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and moderate band IF and RF amplifiers in commercial and industrial applications.

TRANSISTOR 0835

Abstract: mmic a08 0836 MSA-0835 MSA-0836 MSA-0836-BLK MSA-0836-TR1
Contextual Info: Cascadable Silicon Bipolar MMIC Amplifiers Technical Data MSA-0835, -0836 0.5 GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and moderate band IF and RF amplifiers in commercial and industrial applications.

TRANSISTOR 0835

Abstract: id 0835 45-GP MSA-0835 mmic a08 35 micro-X ceramic Package mmic A08 rf A08 mmic msa0835
Contextual Info: Cascadable Silicon Bipolar MMIC Amplifiers Technical Data MSA-0835, -0836 0.5 GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and moderate band IF and RF amplifiers in commercial and industrial applications.

TRANSISTOR 0835

Abstract: mmic a08 A08 monolithic amplifier id 0835 MSA-0835 GHZ micro-X Package 0836 HP MMIC MSA-0836 MSA-0836-BLK
Contextual Info: Cascadable Silicon Bipolar MMIC␣ Amplifiers Technical Data MSA-0835, -0836 0.5␣ GHz and can be used as a high gain transistor below this frequency. Typical applications include narrow and moderate band IF and RF amplifiers in commercial and industrial applications.

ZO 150 74

Abstract: ZO 103 MA 75 522 zo 107 MA 10MHZ BFQ74 Q62702-F788 VCE0518I siemens 800 169 O zo 107 Siemens S7 400
Contextual Info: SIEMENS NPN Silicon RF Transistor • For low-noise amplifiers in the GHz range, and broadband analog and digital applications in telecommunications systems at collector currents from 1 mA to 25 mA. • Hermetically sealed ceramic package. • HiRel/Mil screening available.

BFR520

Abstract: 900MHZ
Contextual Info: BFR520 NPN 9 GHz RF Wideband Transistor COLLECTOR 3 P b Lead Pb -Free 1 BASE 2 SOT-23 FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent reliability. The transistor is encapsulated in a plastic SOT23 envelope.

SN74LVC1G123

Abstract: A115-A C101 SN74LVC1G123YZPR
Contextual Info: SN74LVC1G123 SINGLE RETRIGGERABLE MONOSTABLE MULTIVIBRATOR WITH SCHMITTĆTRIGGER INPUTS SCES586 − JULY 2004 D Available in the Texas Instruments D D D D D D NanoStar and NanoFree Packages Supports 5-V VCC Operation Inputs Accept Voltages to 5.5 V Max tpd of 8 ns at 3.3 V