AT-31011
Abstract: AT-310 AT31033 AT-31033
Text: AT-31011, AT-31033 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Avago’s AT-31011 and AT-31033 are high performance NPN bipolar transistors that have been optimized for operation at low voltages, making them ideal for use in battery powered applications in wireless markets. The AT31033 uses the 3 lead SOT‑23, while the AT-31011 places
|
Original
|
PDF
|
AT-31011,
AT-31033
AT-31011
AT-31033
AT31033
OT143.
5989-2642EN
AV02-0795EN
AT-310
|
AT-31011
Abstract: AT-310 AT-31011-BLK AT-31011-TR1 AT-31033
Text: AT-31011, AT-31033 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-31011 and AT-31033 are high performance NPN bipolar transistors that have been optimized for operation at low voltages, making them ideal for use in
|
Original
|
PDF
|
AT-31011,
AT-31033
AT-31011
AT-31033
OT-23,
AT-31011
OT-143.
AT-31011:
AT-31033:
AT-310
AT-31011-BLK
AT-31011-TR1
|
AT-31011
Abstract: AT-310 AT31033 AT-31033 473 marking code transistor
Text: AT-31011, AT-31033 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Avago’s AT-31011 and AT-31033 are high performance NPN bipolar transistors that have been optimized for operation at low voltages, making them ideal for use in battery powered applications in wireless markets. The AT31033 uses the 3 lead SOT‑23, while the AT-31011 places
|
Original
|
PDF
|
AT-31011,
AT-31033
AT-31011
AT-31033
AT31033
OT143.
inter20
5989-2642EN
AV02-0795EN
AT-310
473 marking code transistor
|
AT-31011
Abstract: AT-310 AT-31011-BLK AT-31011-TR1 AT-31033
Text: Agilent AT-31011, AT-31033 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Features Description Agilent’s AT-31011 and AT-31033 are high performance NPN bipolar transistors that have been optimized for operation at low voltages, making them ideal for use
|
Original
|
PDF
|
AT-31011,
AT-31033
AT-31011
OT-23,
OT-143.
OT-143
AT-31011)
AT-310
AT-31011-BLK
AT-31011-TR1
AT-31033
|
ZL40216
Abstract: No abstract text available
Text: ZL40216 Precision 1:6 LVDS Fanout Buffer Data Sheet February 2013 Ordering Information Features ZL40216LDG1 ZL40216LDF1 Inputs/Outputs • Six precision LVDS outputs • Operating frequency up to 750 MHz Trays Tape and Reel Matte Tin Accepts differential or single-ended input
|
Original
|
PDF
|
ZL40216
ZL40216LDG1
ZL40216LDF1
-40oC
|
Untitled
Abstract: No abstract text available
Text: ZL40216 Precision 1:6 LVDS Fanout Buffer Data Sheet November 2012 Ordering Information Features ZL40216LDG1 ZL40216LDF1 Inputs/Outputs • Six precision LVDS outputs • Operating frequency up to 750 MHz Trays Tape and Reel Matte Tin Accepts differential or single-ended input
|
Original
|
PDF
|
ZL40216
ZL40216LDG1
ZL40216LDF1
-40oC
|
zo 107
Abstract: Model 260K ZO 103 SESI18
Text: 98 Engineering Services Electrical Modelling of Magnetics Our 10 phd engineers, engineers and technicians use advanced engineering tools to model, analyse and optimise the electrical characteristics of wound magnetics. Our electrical equivalent circuits are based on measurements of either a prototype or a production part and are
|
Original
|
PDF
|
CMC22
zo 107
Model 260K
ZO 103
SESI18
|
Untitled
Abstract: No abstract text available
Text: ZL40216 Precision 1:6 LVDS Fanout Buffer Data Sheet April 2014 Ordering Information Features ZL40216LDG1 ZL40216LDF1 Inputs/Outputs • Six precision LVDS outputs • Operating frequency up to 750 MHz Trays Tape and Reel Matte Tin Accepts differential or single-ended input
|
Original
|
PDF
|
ZL40216
ZL40216LDG1
ZL40216LDF1
-40oC
|
AT-41532
Abstract: TRANSISTOR TT 2190 transistor ajw
Text: AT-41532 General Purpose, Low Current NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-41532 is a general purpose NPN bipolar transistor that has been optimized for maximum ft at low voltage operation, making it ideal for use in battery powered
|
Original
|
PDF
|
AT-41532
AT-41532
OT-323
SC-70)
MGA-81563
5989-2650EN
AV02-1964EN
TRANSISTOR TT 2190
transistor ajw
|
Untitled
Abstract: No abstract text available
Text: ZL40226 Precision 2:8 LVDS Fanout Buffer with Simple Input Reference Switching Data Sheet November 2012 Features Ordering Information ZL40226LDG1 ZL40226LDF1 32 Pin QFN Trays 32 Pin QFN Tape and Reel Matte Tin Package size: 5 x 5 mm -40oC to +85oC Inputs/Outputs
|
Original
|
PDF
|
ZL40226
ZL40226LDG1
ZL40226LDF1
-40oC
|
Untitled
Abstract: No abstract text available
Text: ZL40226 Precision 2:8 LVDS Fanout Buffer with Simple Input Reference Switching Data Sheet February 2013 Features Ordering Information ZL40226LDG1 ZL40226LDF1 32 Pin QFN Trays 32 Pin QFN Tape and Reel Matte Tin Package size: 5 x 5 mm -40oC to +85oC Inputs/Outputs
|
Original
|
PDF
|
ZL40226
ZL40226LDG1
ZL40226LDF1
-40oC
|
Untitled
Abstract: No abstract text available
Text: ZL40226 Precision 2:8 LVDS Fanout Buffer with Simple Input Reference Switching Data Sheet April 2014 Features Ordering Information ZL40226LDG1 ZL40226LDF1 32 Pin QFN Trays 32 Pin QFN Tape and Reel Matte Tin Package size: 5 x 5 mm -40oC to +85oC Inputs/Outputs
|
Original
|
PDF
|
ZL40226
ZL40226LDG1
ZL40226LDF1
-40oC
|
AT-32011
Abstract: AT-31011 AT32011 AT-32033 AT-32033-TR1G sot-23 marking code 352
Text: AT-32011, AT-32033 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-32011 and AT-32033 are high performance NPN bipolar transistors that have been optimized for maximum ft at low voltage operation, making them ideal
|
Original
|
PDF
|
AT-32011,
AT-32033
AT-32011
AT-32033
AT32011
OT-143.
5989-2643EN
AV02-0796EN
AT-31011
AT-32033-TR1G
sot-23 marking code 352
|
AT-32033-TR1g
Abstract: AT-32011 AT-32011-BLK AT-32011-TR1 AT-32033 AT-32033-BLK
Text: Agilent AT-32011, AT-32033 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Features Description Agilent’s AT-32011 and AT-32033 are high performance NPN bipolar transistors that have been optimized for maximum ft at low voltage operation, making them
|
Original
|
PDF
|
AT-32011,
AT-32033
AT-32011
AT-32033
OT-23,
OT-143.
OT-143
AT-32011)
AT-32033-TR1g
AT-32011-BLK
AT-32011-TR1
AT-32033-BLK
|
|
|
AT-32011
Abstract: AT-32011-BLK AT-32011-TR1 AT-32033 AT-32033-BLK
Text: AT-32011, AT-32033 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-32011 and AT-32033 are high performance NPN bipolar transistors that have been optimized for maximum ft at low voltage operation, making them
|
Original
|
PDF
|
AT-32011,
AT-32033
AT-32011
AT-32033
OT-23,
OT-143.
AT-32011:
AT-32033:
AT-32011-BLK
AT-32011-TR1
AT-32033-BLK
|
HPMX-3002
Abstract: No abstract text available
Text: Silicon Bipolar RFIC 900 MHz Driver Amplifier Technical Data HPMX-3002 Features • RFIC Medium Power Amplifier • 150-960 MHz Operating Range • +22 dBm Typ. PldB , +23 dBm Typ. Psat @ 900 MHz • 50 dB Typ. Power Control Range • 6 V, 160 mA Operation
|
Original
|
PDF
|
HPMX-3002
HPMX-3002
|
HPMX3002
Abstract: HPMX-3002
Text: Silicon Bipolar RFIC 900 MHz Driver Amplifier Technical Data HPMX-3002 Features Plastic S0-8 Package • RFIC Medium Power Amplifier • 150-960 MHz Operating Range • +22 dBm Typ. PldB , +23 dBm Typ. Psat @ 900 MHz • 50 dB Typ. Power Control Range • 6 V, 160 mA Operation
|
Original
|
PDF
|
HPMX-3002
HPMX-3002
5962-8452E
5965-9661E
HPMX3002
|
ZO 107 MA 75 535
Abstract: zo 107
Text: Voltage Controlled Oscillators D u al O utput 2 5 to 1025 M Hz FREQ. MHZ MODEL NO, Coaxial POWER o mm ctttin iyp . Min. Max Main. Aux. TUNING PHASE NOISE PULLING PUSHING TUNING HARMONICS MHz MH?/V SENSITIVIIY VOLTAGE dBc/H z SSB at offset d ie v frequencies:
|
OCR Scan
|
PDF
|
ZOS-50
ZOS-75
ZOS-50
ZOS-50)
ZO 107 MA 75 535
zo 107
|
ZO 150 74
Abstract: ZO 103 MA 75 522 zo 107 MA 10MHZ BFQ74 Q62702-F788 VCE0518I siemens 800 169 O zo 107 Siemens S7 400
Text: SIEMENS NPN Silicon RF Transistor • For low-noise amplifiers in the GHz range, and broadband analog and digital applications in telecommunications systems at collector currents from 1 mA to 25 mA. • Hermetically sealed ceramic package. • HiRel/Mil screening available.
|
OCR Scan
|
PDF
|
Q62702-F788
Bas-135
fi23SbOS
D0b717b
ZO 150 74
ZO 103 MA 75 522
zo 107 MA
10MHZ
BFQ74
VCE0518I
siemens 800 169 O
zo 107
Siemens S7 400
|
BFQ70
Abstract: zo 107 NA BFq 98 transistor zo 109 zo 107 MA ST2C Q62702-F774 VCE051S1 bfq 85 zo 107
Text: SIEM ENS NPN Silicon RF Transistor • For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. • Hermetically sealed ceramic package • HiRel/Mil screening available. ESD: Electrostatic discharge sensitive device, observe handling precautions!
|
OCR Scan
|
PDF
|
VCE051S1
Q62702-F774
fi23SbOS
0Gb7117
BFQ70
zo 107 NA
BFq 98
transistor zo 109
zo 107 MA
ST2C
VCE051S1
bfq 85
zo 107
|
Untitled
Abstract: No abstract text available
Text: SIEM ENS NPN Silicon RF Transistor • For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. • Hermetically sealed ceramic package • HiRel/Mil screening available. ESD: Electrostatic discharge sensitive device, observe handling precautions!
|
OCR Scan
|
PDF
|
BFQ70
Q62702-F774
S23SbOS
0Db7117
|
UHF Ga AS
Abstract: philips hybrid vHF amplifier DIAGRAM OM2052 philips if catv amplifier
Text: Hybrid integrated circuit VHF/UHF wideband amplifier OM2052 PINNING DESCRIPTION A two-stage wideband amplifier in hybrid integrated circuit technology on a thin-film substrate, intended CATV and MATV applications. PIN CONFIGURATION DESCRIPTION PIN 1 input
|
OCR Scan
|
PDF
|
OM2052
UHF Ga AS
philips hybrid
vHF amplifier DIAGRAM
OM2052
philips if catv amplifier
|
R147
Abstract: R150 200V470
Text: VP Series Lug/Snap-in Terminal Type }giA/ÉÌÌlliO . Withstanding Vibration(jttiHBj FEATURES 1. Designed for withstanding vibration. SAMXçv SAMXOm 100nF 450^ 2. Suited for washing machines and etc. 820mF 8ov samxon sam xon 100nF 45ov 820nF 8n, SPECIFICATIONS
|
OCR Scan
|
PDF
|
100nF
120Hz,
30x40
35x45
30x35
35x30
25x50
R147
R150
200V470
|
jc 817
Abstract: pcb817 transistor jc 817 transistor cms 225 BFQ182 BFQ 225 182 marking transistor transistor 182 BFQ 270 pcb 817
Text: SIEMENS BFQ 182 NPN Silicon RF Transistor Preliminary Data • For low-noise, high-gain broadband amplifiers at collector currents from 1 mA to 20 mA. • / r = 8 GHz F = 1.25 dB at 900 MHz ESD: Electrostatic discharge sensitive device, observe handling precautions!
|
OCR Scan
|
PDF
|
BFQ182
Q62702-F1355
023SbOS
S235bD5
A23SbDS
GGb7231
eht07760
jc 817
pcb817
transistor jc 817
transistor cms 225
BFQ 225
182 marking transistor
transistor 182
BFQ 270
pcb 817
|