ZO 107 NA Search Results
ZO 107 NA Datasheets Context Search
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pt 2399
Abstract: 2SC5006 2SC5006-T1
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12.0.12 300mA transformer
Abstract: transformer 220 to 12-0-12 SMPT0706 12-0-12 1A transformer EPC17 BOBBIN power transformer 12012 slf7745 NLL4532 zo 107 tdk mlf3216
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C1005 CC0402] C1608 CC0603] 12.0.12 300mA transformer transformer 220 to 12-0-12 SMPT0706 12-0-12 1A transformer EPC17 BOBBIN power transformer 12012 slf7745 NLL4532 zo 107 tdk mlf3216 | |
samxon
Abstract: samxon KP Series R132 R133 R135 samxon capacitorS 476 e
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100nF 56000nF 120Hz, 35x25 22x50 25x45 25x40 samxon samxon KP Series R132 R133 R135 samxon capacitorS 476 e | |
2SC5247
Abstract: Smpak
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D-85622 2SC5247 Smpak | |
2SC5246Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog |
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D-85622 2SC5246 | |
MSA-3186-BLKG
Abstract: MSA-3186 MSA-31 MSA-3111 MSA-3111-TR1 MSA-31XX A31x MSA3186-TR1G msa3186 MSA3186-BLK
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MSA-3186 MSA-31 50ohm 900MHz. MSA-3111, MSA-31XX MSA-3186-BLKG MSA-3186 MSA-3111 MSA-3111-TR1 A31x MSA3186-TR1G msa3186 MSA3186-BLK | |
2SC5007
Abstract: 2SC5007-T1
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TRANSISTOR 0835
Abstract: mmic a08 0836 MSA-0835 MSA-0836 MSA-0836-BLK MSA-0836-TR1
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MSA-0835, MSA-0835 5965-9596E 5988-4741EN TRANSISTOR 0835 mmic a08 0836 MSA-0836 MSA-0836-BLK MSA-0836-TR1 | |
TRANSISTOR 0835
Abstract: id 0835 45-GP MSA-0835 mmic a08 35 micro-X ceramic Package mmic A08 rf A08 mmic msa0835
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MSA-0835, MSA-0835 5965-9596E TRANSISTOR 0835 id 0835 45-GP mmic a08 35 micro-X ceramic Package mmic A08 rf A08 mmic msa0835 | |
TRANSISTOR 0835
Abstract: mmic a08 A08 monolithic amplifier id 0835 MSA-0835 GHZ micro-X Package 0836 HP MMIC MSA-0836 MSA-0836-BLK
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MSA-0835, MSA-0835 TRANSISTOR 0835 mmic a08 A08 monolithic amplifier id 0835 GHZ micro-X Package 0836 HP MMIC MSA-0836 MSA-0836-BLK | |
ZO 150 74
Abstract: ZO 103 MA 75 522 zo 107 MA 10MHZ BFQ74 Q62702-F788 VCE0518I siemens 800 169 O zo 107 Siemens S7 400
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Q62702-F788 Bas-135 fi23SbOS D0b717b ZO 150 74 ZO 103 MA 75 522 zo 107 MA 10MHZ BFQ74 VCE0518I siemens 800 169 O zo 107 Siemens S7 400 | |
NEC D 586
Abstract: transistor NEC D 587 NT 407 F TRANSISTOR TO 220 741 vtvm transistor NEC D 986 NT 407 F power transistor NEC D 882 p 2SC4885 R13* MARKING TC236
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BFQ70
Abstract: zo 107 NA BFq 98 transistor zo 109 zo 107 MA ST2C Q62702-F774 VCE051S1 bfq 85 zo 107
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VCE051S1 Q62702-F774 fi23SbOS 0Gb7117 BFQ70 zo 107 NA BFq 98 transistor zo 109 zo 107 MA ST2C VCE051S1 bfq 85 zo 107 | |
Contextual Info: HEW LETT PACKARD M SA-0770 M O D A M P C a sca d ab le S ilic o n B ip o la r M o n o lith ic M icro w a ve In te g ra te d C irc u it A m p lifie rs Features • • • • • • 70 mil Package Cascadable 50 Q Gain Block Low Operating Voltage 4.0 V typical Vo |
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SA-0770 MSA-0770 | |
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Contextual Info: SIEM ENS NPN Silicon RF Transistor • For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. • Hermetically sealed ceramic package • HiRel/Mil screening available. ESD: Electrostatic discharge sensitive device, observe handling precautions! |
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BFQ70 Q62702-F774 S23SbOS 0Db7117 | |
NPN/transistor NEC K 2500
Abstract: 2SA1977 2SC3583
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MSA-0770Contextual Info: Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-0770 Features • Cascadable 50 Ω Gain Block • Low Operating Voltage: 4.0 V Typical Vd • 3 dB Bandwidth: DC to 2.5 GHz • 13.0 dB Typical Gain at 1.0␣ GHz • Unconditionally Stable k>1 |
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MSA-0770 MSA-0770 | |
MSA-0770Contextual Info: Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0770 Features • Cascadable 50 Ω Gain Block • Low Operating Voltage: 4.0 V Typical Vd • 3 dB Bandwidth: DC to 2.5 GHz • 13.0 dB Typical Gain at 1.0 GHz • Unconditionally Stable k>1 • Hermetic, Gold-ceramic |
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MSA-0770 MSA-0770 5965-9592E 5966-4947E | |
ZL40216Contextual Info: ZL40216 Precision 1:6 LVDS Fanout Buffer Data Sheet February 2013 Ordering Information Features ZL40216LDG1 ZL40216LDF1 Inputs/Outputs • Six precision LVDS outputs • Operating frequency up to 750 MHz Trays Tape and Reel Matte Tin Accepts differential or single-ended input |
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ZL40216 ZL40216LDG1 ZL40216LDF1 -40oC | |
Contextual Info: ZL40216 Precision 1:6 LVDS Fanout Buffer Data Sheet November 2012 Ordering Information Features ZL40216LDG1 ZL40216LDF1 Inputs/Outputs • Six precision LVDS outputs • Operating frequency up to 750 MHz Trays Tape and Reel Matte Tin Accepts differential or single-ended input |
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ZL40216 ZL40216LDG1 ZL40216LDF1 -40oC | |
Contextual Info: Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0770 Features • Cascadable 50 Ω Gain Block • Low Operating Voltage: 4.0 V Typical Vd • 3 dB Bandwidth: DC to 2.5 GHz • 13.0 dB Typical Gain at 1.0 GHz • Unconditionally Stable k>1 • Hermetic, Gold-ceramic |
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MSA-0770 MSA-0770 5965-9592E 5966-4947E | |
MSA-0770Contextual Info: MSA-0770 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet Description Features The MSA-0770 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a hermetic, high reliability package. This MMIC is designed for use as a general purpose 50Ω gain block. |
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MSA-0770 MSA-0770 5989-2761EN AV02-1230EN | |
Contextual Info: MSA-0770 Cascadable Silicon Bipolar MMIC Amplifier Data Sheet Description Features The MSA-0770 is a high performance silicon bipolar Monolithic Microwave Integrated Circuit MMIC housed in a hermetic, high reliability package. This MMIC is designed for use as a general purpose 50Ω gain |
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MSA-0770 MSA-0770 5966-7947E 5989-2761EN | |
zo 107
Abstract: MSA-0770
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MSA-0770 MSA-0770 5966-4947E 5989-2761EN zo 107 |