ZO 109 MA Search Results

BFQ 58

Contextual Info: SIEM ENS NPN Silicon RF Transistor BFQ 29P • For low-noise IF and broadband amplifiers up to 1 GHz at collector currents from 1 mA to 20 mA. S CECC-type available: CECC 50002/258. ESD: Electrostatic discharge sensitive device, observe handling precautions!

Contextual Info: PRELIMINARY ICS873032 HIGH SPEED, ÷2, DIFFERENTIAL-TO-3.3V, 5V LVPECL/ECL CLOCK GENERATOR GENERAL DESCRIPTION FEATURES The ICS8 73032 is a high speed, high perforICS mance Differential-to-3.3V, 5V LVPECL/ECL Clock HiPerClockS Generator and a member of the HiPerClockS ™

Contextual Info: PRELIMINARY ICS873032 HIGH SPEED, ÷2, DIFFERENTIAL-TO-3.3V, 5V LVPECL/ECL CLOCK GENERATOR GENERAL DESCRIPTION FEATURES The ICS8 73032 is a high speed, high perforICS mance Differential-to-3.3V, 5V LVPECL/ECL Clock HiPerClockS Generator and a member of the HiPerClockS ™

mga 017

Abstract: TA111 MGA-62100-GP0 MGA-62100-GP2 MGA-62100-GP6 MGA-621
Contextual Info: d a ta sheet O avantek MG A-62100 Low Noise G aAs MM IC Am plifier O ctober, 1989 Features • • • Avantek Chip Outline Output Matched 2 Stage FET Cascade Broadband Performance: 2 - 1 4 GHz Low Noise Figure 50 £ 2 : 2.5 dB typical at 4 GHz 5.0 dB typical at 14 GHz

Contextual Info: data sheet 0AVANTEK M G A-62100 Low Noise G aA s MM IC A m plifier O ctober, 1989 Features • • • Avantek Chip Outline Output Matched 2 Stage FET Cascade Broadband Performance: 2 - 1 4 GHz Low Noise Figure 50 ft : 2.5 dB typical at 4 GHz 5.0 dB typical at 14 GHz

TLE2071

Abstract: TLE2071ACD TLE2071AID TLE2071AMFK TLE2071AMJG TLE2071CD TLE2071ID TLE2071MFK TLE2426
Contextual Info: TLE207x, TLE207xA, TLE207xY EXCALIBUR LOW-NOISE HIGH-SPEED JFET-INPUT OPERATIONAL AMPLIFIERS SLOS181A – FEBRUARY 1997 – REVISED MARCH 2000 D D D Direct Upgrades to TL05x, TL07x, and TL08x BiFET Operational Amplifiers Greater Than 2x Bandwidth 10 MHz and

AT-32011

Abstract: AT-31011 AT32011 AT-32033 AT-32033-TR1G sot-23 marking code 352
Contextual Info: AT-32011, AT-32033 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-32011 and AT-32033 are high performance NPN bipolar transistors that have been optimized for maximum ft at low voltage operation, making them ideal

AT-32033-TR1g

Abstract: AT-32011 AT-32011-BLK AT-32011-TR1 AT-32033 AT-32033-BLK
Contextual Info: Agilent AT-32011, AT-32033 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Features Description Agilent’s AT-32011 and AT-32033 are high performance NPN bipolar transistors that have been optimized for maximum ft at low voltage operation, making them

AT-31011

Abstract: AT32011 AT-32011 AT-32033 AT-32033-TR1G sot-23 npn marking code 162
Contextual Info: AT-32011, AT-32033 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-32011 and AT-32033 are high performance NPN bipolar transistors that have been optimized for maximum ft at low voltage operation, making them ideal

AT-32011

Abstract: AT-32011-BLK AT-32011-TR1 AT-32033 AT-32033-BLK
Contextual Info: AT-32011, AT-32033 Low Current, High Performance NPN Silicon Bipolar Transistor Data Sheet Description Features Avago’s AT-32011 and AT-32033 are high performance NPN bipolar transistors that have been optimized for maximum ft at low voltage operation, making them

transistor SMD MARKING CODE 772

Abstract: smd Transistor 1117 marking code 933 SMD Transistor SMD CODE MARKING 1046 SMD MARKING CODE WG sot-343 transistor smd code 404
Contextual Info: P-HEMT CFH 400 Preliminary Data Sheet • Low noise figure and high associated gain for high IP3 receiver stages up to 4 GHz F = 0.55 dB; GA = 15.7 dB @ 3 V; 10 mA; f = 1.8 GHz • Suitable for PCS CDMA and UMTS applications • Low cost miniature package P-SOT343-4-1

transistor SMD MARKING CODE 772

Abstract: SMD MARKING CODE 201 952 transistor zo 607 zo 607 MA smd Transistor 1117 transistor smd code marking 404 DSA0062290 transistor zo 107 in 4436 zo 607
Contextual Info: P-HEMT CFH 400 Preliminary Data Sheet • Low noise figure and high associated gain for high IP3 receiver stages up to 4 GHz F = 0.55 dB; GA = 15.7 dB @ 3 V; 10 mA; f = 1.8 GHz • Suitable for PCS CDMA and UMTS applications • Low cost miniature package P-SOT343-4-1

ZO 150 74

Abstract: ZO 103 MA 75 522 zo 107 MA 10MHZ BFQ74 Q62702-F788 VCE0518I siemens 800 169 O zo 107 Siemens S7 400
Contextual Info: SIEMENS NPN Silicon RF Transistor • For low-noise amplifiers in the GHz range, and broadband analog and digital applications in telecommunications systems at collector currents from 1 mA to 25 mA. • Hermetically sealed ceramic package. • HiRel/Mil screening available.

Contextual Info: MGA-62100 Low Noise GaAs MMIC Amplifier HEW LETT PA C K A R D *H P A m Features 014 GG1 0 EDS 4447564 • • Output Matched 2 Stage FET Cascade Broadband Performance: 2 - 1 4 GHz Low Noise Figure 50 £2 : 2.5 dB typical at 4 GHz 5.0 dB typical at 14 GHz

IP3 MARK

Abstract: aabl
Contextual Info: 19-1181; Rev 1; 7/9? J ¥ ìj ixiyü _ GeneraI Description The MAX2630/MAX2631/MAX2632/MAX2633 are lowvoltage, low-noise am plifiers for use from VHF to microwave frequencies. Operating from a single +2.7V to +5.5V supply, these devices have a fla t gain

Contextual Info: SIEM ENS NPN Silicon RF Transistor • For low-noise IF and broadband amplifiers in antenna and telecommunications systems at collector currents from 2 mA to 20 mA. • Hermetically sealed ceramic package • HiRel/Mil screening available. ESD: Electrostatic discharge sensitive device, observe handling precautions!

Contextual Info: TLE207x, TLE207xA, TLE207xY EXCALIBUR LOW-NOISE HIGH-SPEED JFET-INPUT OPERATIONAL AMPLIFIERS SLOS181A – FEBRUARY 1997 – REVISED MARCH 2000 D D D Direct Upgrades to TL05x, TL07x, and TL08x BiFET Operational Amplifiers Greater Than 2x Bandwidth 10 MHz and

TLE2081

Abstract: TLE2082 TLE2084 2 MHz ultrasonic sensor TLC 1050 TLE2081ACD TLE2081ACP TLE2081AMFK TLE2082M TLE2081CD
Contextual Info: TLE208x, TLE208xA, TLE208xY EXCALIBUR HIGH-SPEED JFET-INPUT OPERATIONAL AMPLIFIERS SLOS182A – FEBRUARY 1997 – REVISED MARCH 2000 D D Direct Upgrades to TL05x, TL07x, and TL08x BiFET Operational Amplifiers Greater Than 2x Bandwidth 10 MHz and 3× Slew Rate (45 V/µs) Than TL08x

Contextual Info: MAR d a ta sh e et 8 Q iA V A N T E K MSA-0400 MODAMP Cascadable Silicon Bipolar M onolithic Microwave Integrated C ircuit A m plifiers October, 1989 Avantek Chip Outline1 Features • • • • Cascadable 50 Q Gain Block 3 dB Bandwidth: DC to 4.0 GHz

SR8800SPQ

Abstract: coaxial resonator, skyworks SR8800SPQ1160BY sr8800 1.8 GHz direct frequency vco with cad assessment SR8800SPQ1995BY ceramic coaxial resonators rohde SMV1104-34 inductor sp
Contextual Info: APPLICATION NOTE No. 1008: Coaxial Resonators for VCO Applications* Many engineers choose to design their own VCO circuits to reduce cost, size, and power consumption. Development of high Q ceramic coaxial resonators simplifies the VCO design process. When a Skyworks coaxial resonator transmission line

DL2229

Abstract: GTD-18494 K4219 KGL4219G
Contextual Info: GTD-18494 Rev4.0 1Electronic Components Preliminary KGL4219G This version: 19 March 2002 Limiting Amplifier IC DESCRIPTION KGL4219G, Limiting Amplifier IC with 0.18µm gate length GaAs MESFETs, is designed for 10Gb/s digital communication systems. By using DCFL Direct Coupled FET Logic , high sensitibity and low power dissipation

5N521

Abstract: BFQ71 VCE05181 bfq 85 Q62702-F775 siemens Pm 90 87 transistor zo 103 MA 7S 714
Contextual Info: SIEMENS BFQ71 NPN Silicon RF Transistor • For broadband amplifiers up to 2 GHz and fast non-saturated switches at collector currents from 1 mA to 20 mA. • Hermetically sealed ceramic package. • HiRel/Mil screening available. B CECC-type available: CECC 50002/260.

TLE2084

Abstract: TLE2081 TLE2082 TLE2082M
Contextual Info: TLE208x, TLE208xA, TLE208xY EXCALIBUR HIGH-SPEED JFET-INPUT OPERATIONAL AMPLIFIERS SLOS182A – FEBRUARY 1997 – REVISED MARCH 2000 D D Direct Upgrades to TL05x, TL07x, and TL08x BiFET Operational Amplifiers Greater Than 2x Bandwidth 10 MHz and 3× Slew Rate (45 V/µs) Than TL08x

TLE2084

Abstract: TLE2081 TLE2082 TLE2082M
Contextual Info: TLE208x, TLE208xA, TLE208xY EXCALIBUR HIGH-SPEED JFET-INPUT OPERATIONAL AMPLIFIERS SLOS182A – FEBRUARY 1997 – REVISED MARCH 2000 D D Direct Upgrades to TL05x, TL07x, and TL08x BiFET Operational Amplifiers Greater Than 2x Bandwidth 10 MHz and 3× Slew Rate (45 V/µs) Than TL08x