ZO 150 17 Search Results

EP9132

Abstract: EP9134 EP9142 EP9144 EE-19 N EP9131 EP9145 EP9146 EP9147 EP9160
Contextual Info: SMD 28 Pin Passive Delay Lines Zo Delay Tap Ohms nS ± 5% Delays + 10% or 12 nSf nS 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 25 30 35 40 45 50 60 75 100 125 150 175 200 225 250 2.5±0.5 3.010.5 3.5±0.5 4.010.5 4.510.5 5.011.0 6.011.0 7.511.0

Contextual Info: SMD 28 Pin Passive Delay Lines Zo Delay Tap Ohms nS ± 5% Delays + 10% or 12 nSf nS 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 25 30 35 40 45 50 60 75 100 125 150 175 200 225 250 2.5±0.5 3.010.5 3.5±0.5 4.010.5 4.510.5 5.011.0 6.011.0 7.511.0

EP9142

Abstract: EP9144 EP9132 EP9134 EP9131 EP9140 EP9141 EP9150
Contextual Info: SMD 28 Pin Passive Delay Lines Zo OHMS ±10% DELAY NS±5% or ±2NS TAP DELAYS NS RISE TIME NS MAX 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 25 30 35 40 45 50 60 75 100 125 150 175 200 225 250 2.5±0.5 3.0±0.5 3.5+0.5 4.0±0.5 4.5±0.5 5.0±1.0

Contextual Info: SMD 28 Pin Gull-Wing Passive Delay Lines Zo Ohms ± 10% Delay nS ± 5% or ± 2 nS Tap Delays nS 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 50 2.5 8 10 12 20 25 30 35 40 45 50 60 75 100 125 150 175 200 225 250 -

EP9167

Abstract: SMD28
Contextual Info: SMD 28 Pin Gull-Wing Passive Delay Lines Zo OHMS ±10% DELAY NS ±5% or ±2 NS TAP DELAYS NS RISE TIME NS MAX 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 25 30 35 40 45 50 60 75 100 125 150 175 200 225 250 2.5+0.5 3.0±0.5 3.5±0.5 4.0+0.5

EP9140

Contextual Info: SMD 28 Pin Passive Delay Lines Zo Ohm s ±10% Delay Tap nS ± 5% Delays or 12 n S t nS 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 25 30 35 40 45 50 60 75 100 125 150 175 200 225 250 2.5+0.5 3.0+0.5 3.5±0.5 4.0±0.5 4.5±0.5 5.0±1.0 6.0±1.0

Contextual Info: LH28F400SU B-ZO FEATURES • User-Configurable x8 or x16 Operation • 5 V Write/Erase Operation 5 V Vpp; 3.3 V Vqq - No Requirement for DC/DC Converter to Write/Erase • 150 ns Maximum Access Time (Vcc = 3.3 V ± 0.3 V) • Min. 2.7 V Read Capability - 160 ns Maximum Access Time

EP9132

Abstract: EP9144 EP9134 EP9142 EP9131 EE-19 N EP9161 EP9133 EP9135 EP9136
Contextual Info: SMD 28 Pin Passive Delay Lines Zo Delay Tap Ohms nS ± 5% Delays ± 10% or ±2 nS† nS 100 100 100 100 100 100 100 100 100 100 100 100 100 100 100 25 30 35 40 45 50 60 75 100 125 150 175 200 225 250 Rise Atten. Time DB% nS Max. Max. 2.5±0.5 3.0±0.5 3.5±0.5

ZO 109

Abstract: zo 107 2SC5247 Hitachi DSA0014
Contextual Info: 2SC5247 Silicon NPN Epitaxial Transistor Application SMPAK VHF & UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz typ. • High gain, low noise figure PG = 17 dB typ., NF = 1.2 dB typ. at f = 900 MHz 3 1 2 1. Emitter 2. Base 3. Collector

ZO 109

Abstract: zo 103 ma 2SC5247 transistor ECG 332 Hitachi DSA00398
Contextual Info: 2SC5247 Silicon NPN Epitaxial ADE-208-281 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz typ • High gain, low noise figure PG = 17 dB typ, NF = 1.2 dB typ at f = 900 MHz Outline SMPAK 3 1 2 1. Emitter

HITEC 527

Abstract: ZO 103 zo 607 MA transistor zo 607 zo 103 ma 2SC4994 DSA003635
Contextual Info: 2SC4994 Silicon NPN Epitaxial ADE-208-012 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 10.5 GHz Typ • High gain, low noise figure PG = 17.0 dB Typ, NF = 1.2 dB Typ at f = 900 MHz Outline CMPAK–4 2

zo 103 ma

Abstract: 2SC5247 transistor ECG 332 DSA003641
Contextual Info: 2SC5247 Silicon NPN Bipolar Transistor ADE-208-281 Z 1st. Edition Oct. 1994 Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT = 13.5 GHz typ • High gain, low noise figure PG = 17 dB typ, NF = 1.2 dB typ at f = 900 MHz

transistor 2sc 973

Abstract: TRANSISTOR 2SC 733
Contextual Info: HITACHI 2SC5247-Silicon NPN Epitaxial Transistor Application SMPAK VHF & UHF wide band amplifier Features • High gain bandwidth product f-j- = 13.5 GHz typ. • High gain, low noise figure PG = 17 dB typ., NF = 1.2 dB typ. at f = 9 0 0 MHz 1. Emitter

Contextual Info: 2SC5247 Silicon NPN Epitaxial HITACHI Application V H F / U H F wide band am plifier Features • H igh gain bandwidth product fT = 13.5 G H z typ • High gain, low noise figure PG = 17 dB typ, N F = 1.2 dB typ at f = 900 M H z Outline SM PAK 1. Emitter 2. Base

Contextual Info: 2SC5078 S ilicon N P N Epitaxial HITACHI ADE-208-221 1st. Edition Application VHF / UHF wide band amplifier Features • High gain bandwidth product fT= 12 GHz Typ • High gain, low noise figure PG = 17 dB Typ, NF = 1.6 dB Typ at f = 900 MHz Outline MPAK-4

Hitachi DSA002750

Contextual Info: 2SK2685 GaAs HEMT ADE–208–400 Z 1st. Edition October 1995 Application • UHF low noise amplifier Features • • • • Excellent low noise characteristics. Fmin = 0.83dB Typ (3V, 10mA, 2GHz) High associated gain. Ga = 17 dB Typ (3V, 10mA, 2GHz) High voltage. V DS = 6 or more voltage.

2SK2685

Abstract: Hitachi DSA002750 ADE80
Contextual Info: 2SK2685 GaAs HEMT ADE–208–400 Z 1st. Edition October 1995 Application • UHF low noise amplifier Features • • • • Excellent low noise characteristics. Fmin = 0.83dB Typ (3V, 10mA, 2GHz) High associated gain. Ga = 17 dB Typ (3V, 10mA, 2GHz) High voltage. VDS = 6 or more voltage.

175MHZ

Abstract: 843002AKI-40 ICS843002I-40 STM-16
Contextual Info: PRELIMINARY Integrated Circuit Systems, Inc. ICS843002I-40 175MHZ, FEMTOCLOCKS VCXO BASED SONET/SDH JITTER ATTENUATOR GENERAL DESCRIPTION FEATURES The ICS843002I-40 is a member of the HiperClockS™ family of high performance clock HiPerClockS™ solutions from ICS. The ICS843002I-40 is a PLL

2SC5812

Abstract: DSA003640 ADE-208-1468
Contextual Info: 2SC5812 Silicon NPN Epitaxial VHF/UHF wide band amplifier ADE-208-1468 Z Rev.0 Nov. 2001 Features • High power gain, Low noise figure at low power operation: 2 |S21| = 17 dB typ, NF = 1.0 dB typ (VCE = 1 V, IC = 5 mA, f = 900 MHz) Outline MFPAK 3 1 2 Note: Marking is “WG–“.

2SK2685

Abstract: DSA003642
Contextual Info: 2SK2685 GaAs HEMT ADE-208-400A Z 2nd. Edition Mar. 2001 Application • UHF low noise amplifier Features • • • • Excellent low noise characteristics. Fmin = 0.83dB Typ (3V, 10mA, 2GHz) High associated gain. Ga = 17 dB Typ (3V, 10mA, 2GHz) High voltage. V DS = 6 or more voltage.

2SC5820

Abstract: str 1195 IC STR 404
Contextual Info: 2SC5820 Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator ADE-208-1604A Z Rev.1 Nov. 2002 Features • High gain bandwidth product fT = 20 GHz typ. • High power gain and low noise figure; PG = 17.5 dB typ., NF = 1.15 dB typ. at f = 1.8 GHz

MSA-1104

Abstract: MSA-1104 amplifier zo 107 MA zo 107
Contextual Info: Cascadable Silicon Bipolar MMIC␣ Amplifier Technical Data MSA-1104 Features • High Dynamic Range Cascadable 50␣ Ω or 75␣ Ω Gain Block • 3␣ dB Bandwidth: 50␣ MHz to 1.3␣ GHz • 17.5 dBm Typical P1␣ dB at 0.5␣ GHz • 12␣ dB Typical 50␣ Ω Gain at

2SK2685

Abstract: Hitachi DSA00384
Contextual Info: 2SK2685 GaAs HEMT ADE-208-400 1st. Edition Application UHF low noise amplifier Features • Excellent low noise characteristics. Fmin = 0.83 dB Typ. 3 V, 10 mA, 2 GHz • High associated gain. Ga = 17 dB Typ. (3 V, 10 mA, 2 GHz) • High voltage. VDS = 6 or more voltage.

Contextual Info: 2SK2685 GaAs HEMT HITACHI A D E -208^00 Z 1st. Edition October 1995 Application • UHF low noise amplifier Features • Excellent low noise characteristics. Fmin = 0.83dB Typ (3V, 10mA, 2GHz) • High associated gain. Ga = 17 dB Typ (3V, 10mA, 2GHz) •