ZS TRANSISTOR Search Results

of IC 9290

Abstract: NE52118 NE52118-T1 S21E transistor c 5287 ca 3140 ic
Contextual Info: L TO S BAND LOW NOISE AMPLIFIER NPN GaAs HBT FEATURES • NE52118 PACKAGE DIMENSIONS Units in mm HIGH POWER GAIN: GA = 15 dB TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω LOW NOISE: NF = 1.0 dB TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω

ZS 1032

Abstract: NE 555 8 pin IC
Contextual Info: L TO S BAND LOW NOISE AMPLIFIER NPN GaAs HBT FEATURES • NE52418 PACKAGE DIMENSIONS Units in mm HIGH POWER GAIN: GA = 16 dB TYP , MSG = 18 dB TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω LOW NOISE: NF = 1.0 dB TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω

ZS 1032

Contextual Info: L TO S BAND LOW NOISE AMPLIFIER NPN GaAs HBT FEATURES • NE52418 PACKAGE DIMENSIONS Units in mm HIGH POWER GAIN: GA = 16 dB TYP , MSG = 18 dB TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω LOW NOISE: NF = 1.0 dB TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω

NE52418

Abstract: NE52418-T1-A 7212 laser transistor bf 422 NPN
Contextual Info: NEC's L TO S BAND LOW NOISE AMPLIFIER NPN GaAs HBT FEATURES • NE52418 PACKAGE DIMENSIONS Units in mm HIGH POWER GAIN: GA = 16 dB TYP , MSG = 18 dB TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω LOW NOISE: NF = 1.0 dB TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω

IC 6201

Abstract: NE52418 IC 4093 BE 0065E ZS 1032 NE52418-T1 rbm 1 IC nec 555 4093 BF
Contextual Info: NEC's L TO S BAND LOW NOISE AMPLIFIER NPN GaAs HBT FEATURES • NE52418 PACKAGE DIMENSIONS Units in mm HIGH POWER GAIN: GA = 16 dB TYP , MSG = 18 dB TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω LOW NOISE: NF = 1.0 dB TYP at f = 2 GHZ, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω

L2SA1037AKQLT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. General Purpose Transistors PNP Silicon Features z We declare that the material of product compliance with RoHS requirements. zS- Prefix for Automotive and Other Applications Requiring Unique Site L2SA1037AKQLT1G Series S-L2SA1037AKQLT1G Series

DU2860T

Abstract: 22 pf trimmer capacitor
Contextual Info: =zs.-E-= -=- * .-= - E an AMP company RF MOSFET 2 - 175 MHz Power Transistor, 6OW, 28V DU2860T v2.00 Features -*- N-Channel Enhancement Mode Device DMOS Structure Lower Capacitances for Broadband Operation High Saturated Output Power Lower Noise Figure Than Bipolar Devices

Contextual Info: 2SC4132 Transistor, NPN Features Dimensions Units : mm available in MPT3 (MPT, SOT-89, SC-62) package 2SC4132 (MPT3) ♦0.2 4 .5 —0,1 package marking: 2SC4132; CB-*, where ★ is hFE code 1,6 * 0.1 zS _ ~ rr high breakdown voltage BVqjtq = 120 V +0.1 10.4—0 05

B2W03

Abstract: BZG04-8V2
Contextual Info: Concise Catalogue 1996 Philips Semiconductors SMALL-SIGNAL TRANSISTORS & DIODES & MEDIUM-POWER RECTIFIERS Medium-power rectifiers VOLTAGE REGULATOR DIODES LEADED BZD23 BZT03 B2W03 p 2 package Vz range11 V) P to. T .p r ZS M (W) (°C) (W) 3.6 to 270 7.5 to 270

Contextual Info: S E IV ZS’NES wJ CZ>T O R • MPSA65 MMBTA65 PZTA65 PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings

Contextual Info: SIEMENS BCR 142 NPN Silicon Digital Transistor »Switching circuit, inverter, interface circuit, diver circuit >Built in bias resistor R i= 22kiî, R 2=47ki! TT n r Pin Configuration B C R 142 W Zs 1 =B II CO Q62702-C2259 Package o Marking Ordering Code

WF VQE 22 c

Abstract: CA3146E RCA CA3146E RCA-CA3118AT WF vqe 24 e ICAN-5296 wf vqe 24 f CA314T wf vqe 14 e CA3146AE
Contextual Info: G E SOLID STATE Dl D E | 3fl75Clfll G014b3fc> 1 | A rra y s ' CA3118, CA3146, CA3183 T 'H ^ ZS High-Voltage Transistor Arrays Features • Matched general-purpose transistors ■ Vgg matched + 5mV max. ■ Operation from DC to 120 MHz CA3118AT, T; CA3146AE, E

Contextual Info: TOSHIBA MG300Q2YS50 TENTATIVE TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG300Q2YS50 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. • • • • • t High Input Impedance High Speed : tf^O.S/zs Max. Inductive Load Low Saturation Voltage

LM 3717

Abstract: resistor VRC 1E generators winding circuit diagrams DDQ1710 PBL3717 pin shourd winding diagram for single phase ac motor
Contextual Info: _ ERICSSON COMPONENTS INC lb E D • 3373bflD 0001700 t> ■ ERICSSON ^ September 1989 T-52-Ì3-ZS _ :_ PBL3717 Stepper Motor Drive Circuit Description PBL 3717 Is a bipolar monolithic circuit Intended to control and drive the current In one

Z8671

Abstract: 74L5373 7 chip computer zilog z8671 TDA 12110 SP 8324 LCD INTERFACING USING 8051 ASSEMBLING LANGUAGE ZILOG Z8681-12 Z8671 PS Z8-BASIC TDA 2060
Contextual Info: ZS MICROCOMPUTER FAMILY The Z8 2K ROM single chip microcomputer produced by SGS using NMOS technology Automatic electrical test of a VLSI device in the SGS Agrate facility Application board using Z8671 tiny Basic microcomputer CODleDls' Page SGS: an introduction

pn5114

Abstract: PN5432
Contextual Info: ,HARRIS SEMICOND SECTOR 4302271 QQ15bqa H M HAS 27E » T-33'ZS Switching Transistors Continued Junction FETs — N-Channel (Continued) PART NUMBER rDS(ON) n PACKAGE * Max vP V Min Max Iq ss pA Max BVqs S V Min •iHOFF) pA Max •dss mA Min Max *ap ns Max

7415 ic pin details

Abstract: C10535E NE52118 NE52118-T1
Contextual Info: PRELIMINARY DATA SHEET GaAs HETEROJUNCTION BIPOLAR TRANSISTOR NE52118 L to S BAND LOW NOISE AMPLIFIER NPN GaAs HBT FEATURES • For Low Noise & High Gain amplifiers NF = 1.0 dB TYP. Ga = 15.0 dB TYP. MSG = 15.0 dB TYP. @f = 2 GHz, VCE = 2 V, IC = 3 mA, ZS = ZL = 50 Ω

2SA1428

Contextual Info: T O SH IB A 2SA1428 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. POWER SWITCHING APPLICATIONS. • SILICON PNP EPITAXIAL TYPE PCT PROCESS 2 S A 1 428 Unit in mm Low Collector Saturation Voltage : V CE (sat) = - 0,5 V (Max,) (IC = - 1 A) High Speed Switching Time : tgtg = 1.0/zs (Typ.)

uy 41 tube

Abstract: U 254
Contextual Info: Power MOSFET transistors Package dimensions The following illustrations show the package dimensions and the associated land pattern for each package. 4.5 ± 0 . 2 ; 13 /ft tjj ft' rn r 6.0 * % V à St1W n r1 rm ri on ZS Q U-J 15.0 ï Ï 3.0 I u, UTe r + 1

C10535E

Abstract: NE52318 NE52318-T1 NPN transistor 9418 26364
Contextual Info: PRELIMINARY DATA SHEET GaAs HETEROJUNCTION BIPOLAR TRANSISTOR NE52318 L to S BAND LOW NOISE, HIGH GAIN AMPLIFIER NPN GaAs HBT FEATURES • Ideal for low noise and high gain amplifier NF = 1.1 dB TYP., Ga = 16 dB TYP., MSG = 18.0 dB TYP. @ f = 2 GHz, VCE = 2.0 V, IC = 3 mA, ZS = ZL = 50 Ω

CL505

Abstract: DARLINGTON TRANSISTOR ARRAYS 2A PU4325 DARLINGTON ARRAYS PNP 6 "transistor arrays" ic DD17DS
Contextual Info: Power Transistor Arrays PU4325 1^32852 001705Û Tfll PU4325 Package Dim ensions Unit! mm Silicon NPN/PNP Epitaxial Planar Type 4.2m ax. Power A m plifier • Features $ iß[III • 2 N P N elem en ts + 2 P N P elem en ts • High DC current gain irt ^ <zS>

A254735

Abstract: TP2010L TP201 TP241 TP2410L
Contextual Info: SILICONIX INC SûE t • 0254735 0Q1727Û TP2010L, TP2410L P-Channel Enhancement-Mode MOS Transistors 7tlb ■ SIX fTSEconix in c o r p o r a te d 'T* vi-zs PRODUCT SUMMARY TO-92 TO-226AA V (BR)DSS PART NUMBER BOTTOM VIEW ■d (A) '" s r TP2010L -200 10

Contextual Info: MG100J1ZS40 TOSHIBA MG1 0 0 J 1 ZS 4 0 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. • • High Input Impedance High Speed : tf=0.35,us Max. • Low Saturation Voltage : VCE (sat) =3.5V (Max.)

transistor D 2394

Abstract: 2SD2576
Contextual Info: 2SD2167 2SD2394 / 2SD2576 Transistors I Power Transistor 31 ± 4 V , 2A 2SD2167 •F e a tu re s 1 ) Built-in zs n e r diode betw een collector and base. 2 ) Z en er diode has low voltage dispersion. 3 ) Strong protection aga inst reverse pow er surges due to low loads.