Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXMP3A16G ADVANCE INFORMATION 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • ID max V BR DSS RDS(on) max TA = 25°C (Notes 3) 45mΩ @ VGS= -10V -7.5A 70mΩ @ VGS= -4.5V -5.9A -30V Low on-resistance
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ZXMP3A16G
AEC-Q101
DS33575
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXMP10A18G ADV AN CE I N FORM AT I ON 100V P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary ID max V BR DSS RDS(on) max TA = 25°C (Notes 3) 150mΩ @ VGS = -10V -3.7A 190mΩ @ VGS = -6V -3.3A •
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ZXMP10A18G
AEC-Q101
-100V
DS33598
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ZXMP
Abstract: ZXMP3A16GTA ZXMP3A16 DS335
Text: A Product Line of Diodes Incorporated ZXMP3A16G ADVANCE INFORMATION 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • ID max V BR DSS RDS(on) max TA = 25°C (Notes 3) 45mΩ @ VGS = -10V -7.5A 70mΩ @ VGS = -4.5V -5.9A -30V This MOSFET has been designed to minimize the on-state resistance
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ZXMP3A16G
AEC-Q101
DS33575
522-ZXMP3A16GTA
ZXMP3A16GTA
ZXMP
ZXMP3A16GTA
ZXMP3A16
DS335
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ZXMP3A16
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXMP3A16G ADVANCE INFORMATION 30V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits • ID max V BR DSS RDS(on) max TA = 25°C (Notes 3) 45mΩ @ VGS = -10V -7.5A 70mΩ @ VGS = -4.5V -5.9A -30V This MOSFET has been designed to minimize the on-state resistance
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ZXMP3A16G
AEC-Q101
DS33575
ZXMP3A16
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Untitled
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXMP3A16G ADV AN CE I N FORM AT I ON 30V P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary • ID max V BR DSS RDS(on) max TA = 25°C (Notes 3) 45mΩ @ VGS = -10V -7.5A 70mΩ @ VGS = -4.5V -5.9A -30V
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ZXMP3A16G
AEC-Q101
DS33575
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ZXMP 6A17
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXMP6A17G ADV AN CE I N FORM AT I ON 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits ID RDS(on) TA = 25°C • Fast switching speed • Low gate drive • Low input capacitance 125mΩ @ VGS= -10V
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ZXMP6A17G
AEC-Q101
J-STD-020
MIL-STD-202,
DS33375
ZXMP 6A17
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6A17
Abstract: ZXMP 6A17 ZXMP6A17G ZXMP6A17GTA ZXMP
Text: A Product Line of Diodes Incorporated ZXMP6A17G ADVANCE INFORMATION 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits ID RDS(on) TA = 25°C • Fast switching speed • Low gate drive • Low input capacitance 125mΩ @ VGS= -10V
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ZXMP6A17G
AEC-Q101
J-STD-020
MIL-STD-202,
DS33375
6A17
ZXMP 6A17
ZXMP6A17G
ZXMP6A17GTA
ZXMP
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6a17
Abstract: Diodes Incorporated 17-33 ZXMP 6A17 ZXMP6A17KTC ZXMP6A17K J-STD-020D ZXMP LINEAR MARKING date code
Text: A Product Line of Diodes Incorporated ZXMP6A17K 60V P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Product Summary V BR DSS Features and Benefits RDS(on) ID TA = 25°C 125mΩ @ VGS= -10V -6.6A 190mΩ @ VGS= -4.5V
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ZXMP6A17K
O252-3L
6a17
Diodes Incorporated 17-33
ZXMP 6A17
ZXMP6A17KTC
ZXMP6A17K
J-STD-020D
ZXMP
LINEAR MARKING date code
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Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXMP6A17N8 ADV AN CE I N FORM AT I ON 60V P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary V BR DSS • ID RDS(on) TA = 25°C 125mΩ @ VGS = -10V -3.4A 190mΩ @ VGS = -4.5V -2.8A -60V Fast switching speed
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ZXMP6A17N8
AEC-Q101
DS32076
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ZXMP 6A17
Abstract: No abstract text available
Text: A Product Line of Diodes Incorporated ZXMP6A17G ADVANCE INFORMATION 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on ID TA = +25°C • Fast Switching Speed Low Gate Drive 125m @ VGS= -10V -4.3A Low Input Capacitance 190m @ VGS= -4.5V
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ZXMP6A17G
AEC-Q101
DS33375
ZXMP 6A17
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10A18
Abstract: ZXMP ZXMP10A18
Text: A Product Line of Diodes Incorporated ZXMP10A18G ADVANCE INFORMATION 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max V BR DSS RDS(on) max TA = 25°C (Notes 3) 150mΩ @ VGS = -10V -3.7A 190mΩ @ VGS = -6V -3.3A • Low on-resistance
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ZXMP10A18G
-100V
AEC-Q101
DS33598
10A18
ZXMP
ZXMP10A18
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ZXMP 6A17
Abstract: No abstract text available
Text: ZXMP6A17G Green 60V P-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary RDS on ID TA = +25°C • Fast Switching Speed • Low Gate Drive 125mΩ @ VGS= -10V -4.3A • Low Input Capacitance -3.5A • Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
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ZXMP6A17G
AEC-Q101
DS33375
ZXMP 6A17
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Untitled
Abstract: No abstract text available
Text: ZXMP6A17GQ Green 60V P-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary RDS on ID TA = +25°C • Fast Switching Speed Low Gate Drive 125mΩ @ VGS= -10V -4.3A Low Input Capacitance -3.5A Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
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ZXMP6A17GQ
AEC-Q101
DS36686
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ZXMP6A17N8
Abstract: 6A17
Text: A Product Line of Diodes Incorporated ZXMP6A17N8 ADVANCE INFORMATION 60V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits • ID RDS(on) TA = 25°C 125mΩ @ VGS = -10V -3.4A 190mΩ @ VGS = -4.5V -2.8A -60V Fast switching speed
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ZXMP6A17N8
AEC-Q101
DS32076
ZXMP6A17N8
6A17
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ZXMP6A18DN8
Abstract: ZXMP6A18DN8TA ZXMP6A18DN8TC
Text: ZXMP6A18DN8 DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = -60V; RDS(ON) = 0.055 ; ID= -4.8A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This
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ZXMP6A18DN8
ZXMP6A18DN8TA
ZXMP6A18DN8TC
ZXMP6A18DN8
ZXMP6A18DN8TA
ZXMP6A18DN8TC
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ZXMP 6A17
Abstract: 6A17 ZXMP6A17GTA ZXMP6A17GTC ZXMP6A17G
Text: ZXMP6A17G 60V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = -60V: RDS(on) = 0.125 : ID = -4.1A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes
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ZXMP6A17G
OT223
OT223
ZXMP6A17GTA
ZXMP6A17GTC
ZXMP 6A17
6A17
ZXMP6A17GTA
ZXMP6A17GTC
ZXMP6A17G
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09A SOT223
Abstract: ZXMP6A13G ZXMP6A13GTA ZXMP6A13GTC 6A13
Text: ZXMP6A13G 60V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = -60V: RDS(on) = 0.390 : ID = -2.3A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This
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ZXMP6A13G
OT223
OT223
ZXMP6A13GTA
ZXMP6A13GTC
09A SOT223
ZXMP6A13G
ZXMP6A13GTA
6A13
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ZXMP6A13G
Abstract: ZXMP6A13GTA ZXMP6A13GTC
Text: ZXMP6A13G 60V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = -60V: RDS(on) = 0.390 : ID = -2.3A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This
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ZXMP6A13G
OT223
OT223
ZXMP6A13GTA
ZXMP6A13G
ZXMP6A13GTA
ZXMP6A13GTC
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Untitled
Abstract: No abstract text available
Text: ZXMP6A18DN8 ADVANCE INFORMATION DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = -60V; RDS(ON) = 0.055 ; ID= -4.8A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This
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ZXMP6A18DN8
ZXMP6A18DN8TA
ZXMP6A18DN8TC
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6A18
Abstract: ZXMP6A18K ZXMP6A18KTC
Text: ZXMP6A18K 60V P-channel enhancement mode MOSFET Summary V BR DSS = -60V: RDS(on) = 0.055 : ID = -10.4A Description D This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage,
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ZXMP6A18K
ZXMP6A18KTC
6A18
ZXMP6A18K
ZXMP6A18KTC
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Untitled
Abstract: No abstract text available
Text: ZXMP4A16K 40V P-channel enhancement mode MOSFET Summary V BR DSS= -40V; RDS(ON)= 0.060⍀ ID= -9.9A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage,
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ZXMP4A16K
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7A17
Abstract: ZXMP7A17K ZXMP7A17KTC
Text: ZXMP7A17K 70V P-channel enhancement mode MOSFET Summary VDSS=70V : RDS on =0.16⍀ ID=5.7A Description This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage
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ZXMP7A17K
7A17
ZXMP7A17K
ZXMP7A17KTC
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831 SO8 MARKING
Abstract: ZXMP6A16DN8 ZXMP6A16DN8TA ZXMP6A16DN8TC
Text: ZXMP6A16DN8 DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = -60V; RDS(ON) = 0.085 ; ID= -3.9A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This
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ZXMP6A16DN8
ZXMP6A16DN8TA
ZXMP6A16DN8TC
831 SO8 MARKING
ZXMP6A16DN8
ZXMP6A16DN8TA
ZXMP6A16DN8TC
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ZXMP4A16KTC
Abstract: ZXMP 4A16
Text: ZXMP4A16K 40V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = -40V: RDS(on) = 0.060 : ID = -9.9A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes
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ZXMP4A16K
ZXMP4A16KTC
ZXMP 4A16
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