ZXMP10A17E6TA Search Results

Contextual Info: ZXMP10A17E6 100V P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits V BR DSS RDS(on) -100V 350mΩ @ VGS= -10V 450mΩ @ VGS= -6V ID TA = +25°C -1.6A -1.4A Description This MOSFET has been designed to minimize the on-state resistance • Fast Switching Speed

1A17

Abstract: ZXMP10A17E6 ZXMP10A17E6TA spice model ZXMP10A17E6TA DIODE MARKING CODE G SOT23 4.5V TO 100V INPUT REGULATOR
Contextual Info: A Product Line of Diodes Incorporated ZXMP10A17E6 100V P-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Please click here to visit our online spice models database. Product Summary V BR DSS Features and Benefits ID RDS(on) TA = 25°C 350mΩ @ VGS= -10V

Contextual Info: A Product Line of Diodes Incorporated Green ZXMP10A17E6 ADVANCE INFORMATION 100V P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits V BR DSS RDS(on) -100V 350m @ VGS= -10V 450m @ VGS= -6.0V ID TA = +25°C -1.6A -1.4A Description

ZXMP10A17E6TA

Abstract: 1A17 ZXMP10A17E6
Contextual Info: ZXMP10A17E6 100V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = -100V: RDS(ON) = 0.350 ; ID = -1.4A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This

Contextual Info: DATE: 13th January, 2015 INFORMATIONAL PCN #: 2166 (REV 01) PCN Title: Addition of Date Code Information to Part Marking Dear Customer: This is an announcement of change(s) to products that are currently being

Contextual Info: DATE: 28th November, 2012 PCN #: 2041 REV 02 PCN Title: Conversion to Copper Bond Wire on Selected Discrete Products Dear Customer: This is an announcement of change s to products that are currently being

ASD103

Contextual Info: DATE: 9th April, 2014 PCN #: 2140 PCN Title: Leadframe material change for SOT-25, SOT-26 and TSOT25 packages Dear Customer: This is an announcement of change s to products that are currently being

GE1030

Abstract: FSV064 fmmt451ta ZXM61N03FTA FST866FTD ZXTN25050DFHTA BS250FTA ZXMP3F37DN8TA sot23-6
Contextual Info: PRODUCT CHANGE NOTICE DCS/PCN-1119 Rev 00 Contact Date: Implementation Date: Alert Category: Alert Type: PCN #: October 30, 2008 November 13, 2008 Integrated Circuits and Discrete Semiconductors New manufacturing location and addition of new mould compounds

ZXMP10A17E6TA

Abstract: 1A17 MARKING TR SOT23-6 P MOSFET SOT23-6 ZXMP10A17E6 ZXMP10A17E6TC MARKING TH SOT23-6 MOSFET
Contextual Info: ZXMP10A17E6 100V P-CHANNEL ENHANCEMENT MODE MOSFET SUMMARY V BR DSS = -100V: RDS(ON) = 0.350 ; ID = -1.4A DESCRIPTION This new generation of Trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them

AP3039AM

Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
Contextual Info: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)

AEC-Q101

Abstract: AEC-Q100 BSS138TA DMP2066 BAT54TA FZT953TA BSS123TA FMMT458TA FZT749TA FMMT591ATA
Contextual Info: AEC-Q100/AEC-Q101 Automotive Grade Devices Part Number Part Number Part Number 1N4005GT 1N4148W 1N4148WS 1N4448HLP 1N4448W 1N4448WS 2DA1774Q 2DA1774QLP 2DC4617Q 2DC4617QLP 2DD2150R 2N7002 2N7002A 2N7002DW 2N7002K 2N7002TA 2N7002V 2N7002VA 2N7002VAC 2N7002VC

zxczm800

Abstract: SDPB1K10NB-7 zds1002 1N4007 MINI MELF ZXCZA200 SBR40S45CT ZXCZM800QPATR ZLNB153X8TC zxnb4200 zetex BSS138TA
Contextual Info: Corporate Address: 15660 N. Dallas Parkway, Suite 850, Dallas, TX 75248 USA Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (ROHS) 2002/95/EC Waste Electrical and Electronic Equipment (WEEE)

94v-0 motor

Contextual Info: Green ZXMP10A17E6 100V P-CHANNEL ENHANCEMENT MODE MOSFET ADVANCE INFORMATION Product Summary Features and Benefits V BR DSS RDS(on) -100V 350mΩ @ VGS= -10V 450mΩ @ VGS= -6V ID TA = +25°C -1.6A -1.4A Description This MOSFET has been designed to minimize the on-state resistance

Contextual Info: A Product Line of Diodes Incorporated ADV AN CE I N FORM AT I ON ZXMP10A17E6 100V P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary V BR DSS ID RDS(on) TA = 25°C 350mΩ @ VGS= -10V -1.6 450mΩ @ VGS= -6.0V -1.4 -100V • Fast switching speed