DSA00759980.pdf by Toshiba

Partial File Text SSM3K126TU TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type Target Specification SSM3K126TU Ron = 71 m (max) (@VGS = 4.0 V) Ron = 38 m (max) (@VGS = 10 V) Unit: mm 2.1±0.1 1.7±0.1 0.6
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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