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    DASF006411.pdf by Semtech Electronics

    • 1SS367 SILICON EPITAXIAL SCHOTTKY BARRIER DIODE High Speed Switching Applicatio PINNING Features ยท DESCRIPTION PIN 1 VF = 0.23V (typ.) @IF = 5mA Cathode 2 Low forward volta
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    1SS367 S3 marking DIODE
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