DASF005400.pdf by Toshiba

Partial File Text MICROWAVE POWER GaAs FET TIM4450-25UL MICROWAVE SEMICONDUCTOR TECHNICAL DATA FEATURES n HIGH POWER P1dB=44.5dBm at 4.4GHz to 5.0GHz n HIGH GAIN G1dB=10.0dB at 4.4GHz to 5.0GHz n BROAD
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown
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