DSAUTAZ0018314.pdf by Fairchild Semiconductor

Partial File Text FDB2614 N-Channel PowerTrench® MOSFET March 2013 FDB2614 N-Channel PowerTrench® MOSFET 200 V, 62 A, 27 m Features · RDS(on) = 22.9 m ( Typ.) @ VGS = 10 V, ID = 31 A · High Performance Trench
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Pb Free Unknown
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