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Partial File Text ï»¿MJE800/801/803 NPN EPITAXIAL SILICON DARLINGTON TRANSISTOR HIGH DC CURRENT GAIN MIN hFE= 750 I c= -1-5 and -2.0A DC MONOLITHIC CONSTRUCTION WITH BUILT-IN BASE-EMITTER RESISTORS â¢ Complement t
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702 TRANSISTOR npn darlington transistor with built-in temperature MJE800