DSA00153642.pdf by Cree

Partial File Text CGH40010 10 W, RF Power GaN HEMT Cree's CGH40010 is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40010, operating from a 28 volt rail, offers a general purpos
Datasheet Type Original
RoHS Unknown
Pb Free Unknown
Lifecycle Unknown

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40010P CGH40010 Large Signal Model CGH40010F CGH40010P CGH40015 CGH40015F F/CGH40010 Large Signal Model