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DSA00153629.pdf
by Cree
Partial File Text
CGH09120F 120 W, UHF - 2.5 GHz, GaN HEMT for WCDMA, LTE, MC-GSM Cree's CGH09120F is a gal
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lium nitride (GaN) high electron mobility transistor (HEMT) designed specifically for high efficiency, high
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Datasheet Type
Original
RoHS
Unknown
Pb Free
Unknown
Lifecycle
Unknown
DSA00153629.pdf
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ATC 600F
cgh09120f
LTE AMPLIFIER
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