DSA00364304.pdf by Hitachi Semiconductor

Partial File Text 3SK319 Silicon N-Channel Dual Gate MOS FET UHF RF Amplifier ADE-208-602 (Z) 1st. Edition Feb. 1998 Features · Low noise characteristics; (NF= 1.4 dB typ. at f= 900 MHz) · Excellent cross mo
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3SK319 ADE-208-602