This site uses third-party website tracking technologies to provide and continually improve our services, and to display advertisements according to users' interests. I agree and may revoke or change my consent at any time with effect for the future.
TOSHIBA
MICROWAVE SEMICONDUCTORS TECHNICAL DATA
MICROWAVE POWER GaAs FET
JS P
I
9 10-AS(Draft)
Oct. 1997
1 RF PERFORMANCE SPECIFICATIONS fT a = 2 5 « C '>
CHARACTERISTICS O utput Pow
