DSA00363865.pdf by Hitachi Semiconductor

Partial File Text 4AK17 Silicon N-Channel Power MOS FET Array ADE-208-1202 (Z) 1st. Edition Mar. 2001 Application High speed power switching Features · Low on-resistance R DS(on) 0.045 , VGS = 10 V, I D =
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4AK17 ADE-208-1202 SP-10