DASF0018714.pdf by ON Semiconductor

Partial File Text NGB8207AN Ignition IGBT 20 A, 365 V, N-Channel D2PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Overvoltage clamped protection f
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8207ANG NGB8207AN-D NGB8207ANT4G

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