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    DSAZIHA100096538.pdf by Fairchild Semiconductor

    • FDB86360_F085 N-Channel Power Trench® MOSFET D D 80V, 110A, 1.8mΩ Features Typ rDS(on) = 1.5mΩ at VGS = 10V, ID = 80A G Typ Qg(tot) = 207nC at VGS = 10V, ID = 80A UIS Capability
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