1N4448W Frequently Asked Questions (FAQs)
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The recommended storage temperature for 1N4448W is -40°C to 150°C.
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Yes, the 1N4448W is a high-speed switching diode with a fast recovery time, making it suitable for high-frequency applications up to 1 GHz.
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The maximum allowable power dissipation for the 1N4448W is 500 mW.
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Yes, the 1N4448W is a lead-free and RoHS (Restriction of Hazardous Substances) compliant device.
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The typical junction capacitance of the 1N4448W is 2 pF.