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    Part Img 1PS10SB82,315 datasheet by NXP Semiconductors

    • Schottky barrier diode - C<sub>d</sub> max.: 1@VR=0V pF; Configuration: single ; I<sub>F</sub> max: 30 mA; I<sub>FSM</sub> max: - A; I<sub>R</sub> max: 0.2@VR=1VA; I<sub>R</sub> max: 0.2@VR=1V mA; V<sub>F</sub>max: 340@IF=1mA mV; V<sub>R</sub> max: 15 V; Package: SOD882 (SOD2); Container: Tape reel smd
    • Original
    • Yes
    • Unknown
    • Transferred
    • EAR99
    • 8541.10.00.70
    • 8541.10.00.70
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    1PS10SB82,315 datasheet preview

    1PS10SB82,315 Frequently Asked Questions (FAQs)

    • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1mm clearance around the device for airflow and heat dissipation.
    • Implement a robust thermal management system, including a heat sink and thermal interface material. Ensure the device is operated within the recommended junction temperature range (TJ) of -40°C to 150°C.
    • Use a reflow soldering process with a peak temperature of 260°C (500°F) and a dwell time of 20-30 seconds. Ensure the device is handled and stored in accordance with the JEDEC J-STD-033C standard.
    • Implement EOS protection measures, such as adding TVS diodes or zener diodes, to protect the device from voltage transients and surges. Ensure the device is operated within the recommended voltage range.
    • Store the device in a dry, cool place, away from direct sunlight and moisture. Handle the device by the body, avoiding touching the pins or electrical connections. Use anti-static packaging and follow the JEDEC J-STD-033C standard for handling and storage.
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