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    Part Img 1PS76SB70,115 datasheet by NXP Semiconductors

    • General-purpose Schottky diodes - C<sub>d</sub> max.: 2@VR=0V pF; Configuration: single ; I<sub>F</sub> max: 70 mA; I<sub>FSM</sub> max: 100 A; I<sub>R</sub> max: 0.1@VR=50VA; V<sub>F</sub>max: 750@IF=10mA mV; V<sub>R</sub> max: 70 V; Package: SOD323 (UMD2; I-IEIA; URP); Container: Tape reel smd
    • Original
    • Yes
    • Transferred
    • EAR99
    • 8541.10.00.70
    • 8541.10.00.70
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    1PS76SB70,115 datasheet preview

    1PS76SB70,115 Frequently Asked Questions (FAQs)

    • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. Ensure a minimum of 1 mm clearance around the device for airflow and heat dissipation.
    • Implement a robust thermal management system, including a heat sink and thermal interface material. Ensure good airflow and avoid hot spots. Monitor junction temperature (Tj) and adjust the system design accordingly.
    • Monitor the device's junction temperature (Tj), input voltage (Vin), output voltage (Vout), and output current (Iout). Ensure these parameters are within the recommended operating ranges.
    • Implement EOS and ESD protection measures, such as using TVS diodes, ESD protection devices, and following proper handling and storage procedures.
    • Use low-ESR capacitors with a minimum capacitance of 10 μF for the input and output. Ensure the capacitors are rated for the maximum operating voltage and temperature range.
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