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    DSA00323989.pdf by Infineon Technologies

    • IPB08CNE8N G IPI08CNE8N G IPP08CNE8N G OptiMOS®2 Power-Transistor Features · N-channel, n... ormal level · Excellent gate charge x R DS(on) product (FOM) · Very low on-resistance R DS(on) · 175 °C ope more
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