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    DSAUD0058230.pdf by Fenghua Advanced Technology

    • 18 TEL:0758-2865088 2865091 FAX:0758-2849749 SOT-89 Medium Power Transistor FHB1132 FEATURES ·Low VCE(sat) = -0.2V (Typ.) (IC / IB = ­500mA / ­50mA) ·Epitaxial planar type PNP silicon t
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